Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userAnalytical Solutions for the Surface States of Bi$_{1-x}$Sb$_x$ ($0le x lesssim 0.1$)
108
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
Analytical solutions for the surface state (SS) of an extended Wolff Hamiltonian, which is a common Hamiltonian for strongly spin-orbit coupled systems, are obtained both for semi-infinite and finite-thickness boundary conditions. For the semi-infinite system, there are three types of SS solutions: (I-a) linearly crossing SSs in the direct bulk band gap, (I-b) SSs with linear dispersions entering the bulk conduction or valence bands away from the band edge, and (II) SSs with nearly flat dispersions entering the bulk state at the band edge. For the finite-thickness system, a gap opens in the SS of solution I-a. Numerical solutions for the SS are also obtained based on the tight-binding model of Liu and Allen [Phys. Rev. B, 52, 1566 (1995)] for Bi$_{1-x}$Sb$_x$ ($0le x le 0.1$). A perfect correspondence between the analytic and numerical solutions is obtained around the $bar{M}$ point including their thickness dependence. This is the first time that the character of the SS numerically obtained is identified with the help of analytical solutions. The size of the gap for I-a SS can be larger than that of bulk band gap even for a thick films ($lesssim 200$ bilayers $simeq 80$ nm) of pure bismuth. Consequently, in such a film of Bi$_{1-x}$Sb$_x$, there is no apparent change in the SSs through the band inversion at $xsimeq 0.04$, even though the nature of the SS is changed from solution I-a to I-b. Based on our theoretical results, the experimental results on the SS of Bi$_{1-x}$Sb$_x$ ($0le x lesssim 0.1$) are discussed.
rate research
Read More
We report a high-field magnetotransport study on selected low-carrier crystals of the topological insulator Bi$_{2-x}$Sb${_x}$Te$_{3-y}$Se$_{y}$. Monochromatic Shubnikov - de Haas (SdH) oscillations are observed at 4.2~K and their two-dimensional nature is confirmed by tilting the magnetic field with respect to the sample surface. With help of Lifshitz-Kosevich theory, important transport parameters of the surface states are obtained, including the carrier density, cyclotron mass and mobility. For $(x,y)=(0.50,1.3)$ the Landau level plot is analyzed in terms of a model based on a topological surface state in the presence of a non-ideal linear dispersion relation and a Zeeman term with $g_s = 70$ or $-54$. Input parameters were taken from the electronic dispersion relation measured directly by angle resolved photoemission spectroscopy on crystals from the same batch. The Hall resistivity of the same crystal (thickness of 40~$mu$m) is analyzed in a two-band model, from which we conclude that the ratio of the surface conductance to the total conductance amounts to 32~%.
The idea of employing non-Abelian statistics for error-free quantum computing ignited interest in recent reports of topological surface superconductivity and Majorana zero modes (MZMs) in FeTe$_{0.55}$Se$_{0.45}$. An associated puzzle is that the topological features and superconducting properties are not observed uniformly across the sample surface. Understanding and practical control of these electronic inhomogeneities present a prominent challenge for potential applications. Here, we combine neutron scattering, scanning angle-resolved photoemission spectroscopy (ARPES), and microprobe composition and resistivity measurements to characterize the electronic state of Fe$_{1+y}$Te$_{1-x}$Se$_{x}$. We establish a phase diagram in which the superconductivity is observed only at sufficiently low Fe concentration, in association with distinct antiferromagnetic correlations, while the coexisting topological surface state occurs only at sufficiently high Te concentration. We find that FeTe$_{0.55}$Se$_{0.45}$ is located very close to both phase boundaries, which explains the inhomogeneity of superconducting and topological states. Our results demonstrate the compositional control required for use of topological MZMs in practical applications.
Using magneto-infrared spectroscopy, we have explored the charge dynamics of (Bi,Sb)$_2$Te$_3$ thin films on InP substrates. From the magneto-transmission data we extracted three distinct cyclotron resonance (CR) energies that are all apparent in the broad band Faraday rotation (FR) spectra. This comprehensive FR-CR data set has allowed us to isolate the response of the bulk states from the intrinsic surface states associated with both the top and bottom surfaces of the film. The FR data uncovered that electron- and hole-type Dirac fermions reside on opposite surfaces of our films, which paves the way for observing many exotic quantum phenomena in topological insulators.
We report results of terahertz Faraday and Kerr rotation spectroscopy measurements on thin films of $text{Bi}_{1-x}text{Sb}_{x}$, an alloy system that exhibits a semimetal-to-topological-insulator transition as the Sb composition $x$ increases. By using a single-shot time-domain terahertz spectroscopy setup combined with a table-top pulsed mini-coil magnet, we conducted measurements in magnetic fields up to 30~T, observing distinctly different behaviors between semimetallic ($x < 0.07$) and topological insulator ($x > 0.07$) samples. Faraday and Kerr rotation spectra for the semimetallic films showed a pronounced dip that blue-shifted with the magnetic field, whereas spectra for the topological insulator films were positive and featureless, increasing in amplitude with increasing magnetic field and eventually saturating at high fields ($>$20~T). Ellipticity spectra for the semimetallic films showed resonances, whereas the topological insulator films showed no detectable ellipticity. To explain these observations, we developed a theoretical model based on realistic band parameters and the Kubo formula for calculating the optical conductivity of Landau-quantized charge carriers. Our calculations quantitatively reproduced all experimental features, establishing that the Faraday and Kerr signals in the semimetallic films predominantly arise from bulk hole cyclotron resonances while the signals in the topological insulator films represent combined effects of surface carriers originating from multiple electron and hole pockets. These results demonstrate that the use of high magnetic fields in terahertz magnetopolarimetry, combined with detailed electronic structure and conductivity calculations, allows us to unambiguously identify and quantitatively determine unique contributions from different species of carriers of topological and nontopological nature in Bi$_{1-x}$Sb$_x$.
We show Shubnikov-de Haas oscillations in topological insulator (Bi$_{x}$Sb$_{1-x}$)$_{2}$Te$_{3}$ films whose carrier type is p-type (x = 0.29, 0.34) and n-type (x = 0.42). The physical properties such as the Berry phase, mobility, and the scattering time are significantly changed by tuning the Fermi-level position with the concentration x. The Landau-level fan diagram in the sample with x = 0.42 showed the $pi$ Berry phase and its mobility was as high as 17,000 cm$^{2}$/V/s, whereas the others had the 2$pi$ Berry phase and much lower mobility. This suggests that because the bulk band of the sample with x = 0.42 does not cross the Fermi level, it becomes bulk insulating, resulting in the topological surface-state dominating transport. Thus, we can switch sample properties from degenerate to bulk insulating by tuning the concentration x, which is consistent with results of angle-resolved photoemission spectroscopy.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
