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Register a new userFermi surface with Dirac fermions in CaFeAsF determined via quantum oscillation measurements
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Despite the fact that 1111-type iron arsenides hold the record transition temperature of iron-based superconductors, their electronic structures have not been studied much because of the lack of high-quality single crystals. In this study, we completely determine the Fermi surface in the antiferromagnetic state of CaFeAsF, a 1111 iron-arsenide parent compound, by performing quantum oscillation measurements and band-structure calculations. The determined Fermi surface consists of a symmetry-related pair of Dirac electron cylinders and a normal hole cylinder. From analyses of quantum-oscillation phases, we demonstrate that the electron cylinders carry a nontrivial Berry phase $pi$. The carrier density is of the order of 10$^{-3}$ per Fe. This unusual metallic state with the extremely small carrier density is a consequence of the previously discussed topological feature of the band structure which prevents the antiferromagnetic gap from being a full gap. We also report a nearly linear-in-$B$ magnetoresistance and an anomalous resistivity increase above about 30 T for $B parallel c$, the latter of which is likely related to the quantum limit of the electron orbit. Intriguingly, the electrical resistivity exhibits a nonmetallic temperature dependence in the paramagnetic tetragonal phase ($T >$ 118 K), which may suggest an incoherent state. Our study provides a detailed knowledge of the Fermi surface in the antiferromagnetic state of 1111 parent compounds and moreover opens up a new possibility to explore Dirac-fermion physics in those compounds.
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We have completely determined the Fermi surface in KFe$_2$As$_2$ via de Haas-van Alphen (dHvA) measurements. Fundamental frequencies $epsilon$, $alpha$, $zeta$, and $beta$ are observed in KFe$_2$As$_2$. The first one is attributed to a hole cylinder near the X point of the Brillouin zone, while the others to hole cylinders at the $Gamma$ point. We also observe magnetic breakdown frequencies between $alpha$ and $zeta$ and suggest a plausible explanation for them. The experimental frequencies show deviations from frequencies predicted by band structure calculations. Large effective masses up to 19 $m_e$ for $B parallel c$ have been found, $m_e$ being the free electron mass. The carrier number and Sommerfeld coefficient of the specific heat are estimated to be 1.01 -- 1.03 holes per formula unit and 82 -- 94 mJmol$^{-1}$K$^{-2}$, respectively, which are consistent with the chemical stoichiometry and a direct measure of 93 mJmol$^{-1}$K$^{-2}$ [H. Fukazawa textit{et al}., J. Phys. Soc. Jpn. textbf{80SA}, SA118 (2011)]. The Sommerfeld coefficient is about 9 times enhanced over a band value, suggesting the importance of low-energy spin and/or orbital fluctuations, and places KFe$_2$As$_2$ among strongly correlated metals. We have also performed dHvA measurements on Ba$_{0.07}$K$_{0.93}$Fe$_2$As$_2$ and have observed the $alpha$ and $beta$ frequencies.
Shubnikov-de Haas oscillation measurements were performed on CaFeAsF up to a high temperature of $T$ = 7 K. The oscillation frequency of the $alpha$ Dirac electron cylinder exhibits a $T^2$ shift as the temperature is raised, while that of the $beta$ Schrodinger hole cylinder shows no clear shift. The observed shift is reasonably explained by the topological frequency shift proposed in [Guo, Alexandradinata, textit{et al.}, arXiv:1910.07608] which argues that the energy dependence of the effective mass peculiar to a linear band dispersion gives rise to a frequency shift proportional to $T^2$. The present result corroborate the applicability of the topological frequency shift to distinguish topologically nontrivial pockets from trivial ones.
Topological states of matter challenge the paradigm of symmetry breaking, characterized by gapless boundary modes and protected by the topological property of the ground state. Recently, angle-resolved photoemission spectroscopy (ARPES) has revealed that semiconductors of Bi$_{2}$Se$_{3}$ and Bi$_{2}$Te$_{3}$ belong to such a class of materials. Here, we present undisputable evidence for the existence of gapless surface Dirac fermions from transport in Bi$_{2}$Te$_{3}$. We observe Sondheimer oscillation in magnetoresistance (MR). This oscillation originates from the quantization of motion due to the confinement of electrons within the surface layer. Based on Sondheimers transport theory, we determine the thickness of the surface state from the oscillation data. In addition, we uncover the topological nature of the surface state, fitting consistently both the non-oscillatory part of MR and the Hall resistance. The side-jump contribution turns out to dominate around 1 T in Hall resistance while the Berry-curvature effect dominates in 3 T $sim$ 4 T.
We report extensive measurements of quantum oscillations in the normal state of the Fe-based superconductor LaFePO, (Tc ~ 6 K) using low temperature torque magnetometry and transport in high static magnetic fields (45 T). We find that the Fermi surface is in broad agreement with the band-structure calculations with the quasiparticle mass enhanced by a factor ~2. The quasi-two dimensional Fermi surface consist of nearly-nested electron and hole pockets, suggesting proximity to a spin/charge density wave instability.
The interplay between topological electronic structure and superconductivity has attracted tremendous research interests recently as they could induce topological superconductivity (TSCs) which may be used to realize topological qubits for quantum computation. Among various TSC candidates, superconducting BaSn3 (Tc ~ 4.4 K) has been predicted to be a topological Dirac semimetal (TDS) hosting two pairs of Dirac points along the G - A direction. Here, by combining the use of angle-resolved photoemission spectroscopy and ab initio calculations, we identified the predicted topological Dirac fermions and confirmed the TDS nature of the compound. In addition, we observed surface states connecting the Dirac points. Our observations demonstrate BaSn3 as a superconductor with nontrivial topological electronic structures.
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