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Register a new user1305 nm MoTe2-on-silicon Laser
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The missing piece in the jigsaw of silicon photonics is a light source that can be easily incorporated into the standard silicon fabrication process. Recent advances in the development of atomically thin layers of semiconducting transition metal dichalogenides (TMDs), with direct bandgaps in the near-infrared region, have opened up new possibilities for addressing this need. Here, we report a unique silicon laser source that employs molybdenum ditelluride (MoTe2) as a gain material in a photonic crystal nanocavity resonator, fabricated in silicon-on-insulator. We demonstrate optically pumped MoTe2-on-silicon devices lasing at 1305 nm, i.e. in the centre of the O-band used in optical communications, operating in the continuous-wave (CW) regime, at room temperature and with a threshold power density as low as 1.5 kW/cm2. This 2D-on-silicon geometry offers the promise of an integrated low-cost electrically pumped nanoscale silicon light source, thereby adding an essential building block to the silicon photonics platform.
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Single photon emitters in silicon carbide (SiC) are attracting attention as quantum photonic systems. However, to achieve scalable devices it is essential to generate single photon emitters at desired locations on demand. Here we report the controlled creation of single silicon vacancy ($V_{Si}$) centres in 4H-SiC using laser writing without any post-annealing process. Due to the aberration correction in the writing apparatus and the non-annealing process, we generate single $V_{Si}$ centres with yields up to 30%, located within about 80 nm of the desired position in the transverse plane. We also investigated the photophysics of the laser writing $V_{Si}$ centres and conclude that there are about 16 photons involved in the laser writing $V_{Si}$ centres process. Our results represent a powerful tool in fabrication of single $V_{Si}$ centres in SiC for quantum technologies and provide further insights into laser writing defects in dielectric materials.
Nonlinear topological photonic and phononic systems have recently aroused intense interests in exploring new phenomena that have no counterparts in electronic systems. The squeezed bosonic interaction in these systems is particularly interesting, because it can modify the vacuum fluctuations of topological states, drive them into instabilities, and lead to topological parametric lasers. However, these phenomena remain experimentally elusive because of limited nonlinearities in most existing topological bosonic systems. Here, we experimentally realized topological parametric lasers based on nonlinear nanoelectromechanical Dirac-vortex cavities with strong squeezed interaction. Specifically, we parametrically drove the Dirac-vortex cavities to provide phase-sensitive amplification for topological phonons, and observed phonon lasing above the threshold. Additionally, we confirmed that the lasing frequency is robust against fabrication disorders and that the free spectral range defies the universal inverse scaling law with increased cavity size, which benefit the realization of large-area single-mode lasers. Our results represent an important advance in experimental investigations of topological physics with large bosonic nonlinearities and parametric gain.
Silicon photonics enables wafer-scale integration of optical functionalities on chip. A silicon-based laser frequency combs could significantly expand the applications of silicon photonics, by providing integrated sources of mutually coherent laser lines for terabit-per-second transceivers, parallel coherent LiDAR, or photonics-assisted signal processing. Here, we report on heterogeneously integrated laser soliton microcombs combining both InP/Si semiconductor lasers and ultralow-loss silicon nitride microresonators on monolithic silicon substrate. Thousands of devices are produced from a single wafer using standard CMOS techniques. Using on-chip electrical control of the microcomb-laser relative optical phase, these devices can output single-soliton microcombs with 100 GHz repetition rate. Our approach paves the way for large-volume, low-cost manufacturing of chip-based frequency combs for next-generation high-capacity transceivers, datacenters, space and mobile platforms.
Electrically-pumped lasers directly grown on silicon are key devices interfacing silicon microelectronics and photonics. We report here, for the first time, an electrically-pumped, room-temperature, continuous-wave (CW) and single-mode distributed feedback (DFB) laser array fabricated in InAs/GaAs quantum-dot (QD) gain material epitaxially grown on silicon. CW threshold currents as low as 12 mA and single-mode side mode suppression ratios (SMSRs) as high as 50 dB have been achieved from individual devices in the array. The laser array, compatible with state-of-the-art coarse wavelength division multiplexing (CWDM) systems, has a well-aligned channel spacing of 20 0.2 nm and exhibits a record wavelength coverage range of 100 nm, the full span of the O-band. These results indicate that, for the first time, the performance of lasers epitaxially grown on silicon is elevated to a point approaching real-world CWDM applications, demonstrating the great potential of this technology.
We present the optoelectronic characterization of two graphene/silicon Schottky junctions, fabricated by transferring CVD-graphene on flat and nanotip-patterned n-Si substrates, respectively. We demonstrate record photo responsivity, exceeding 2.5 A/W under white light, which we attribute to the contribution of charges photogenerated in the surrounding region of the flat junction or to the internal gain by impact ionization caused by the enhanced field on the nanotips.
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