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Register a new userNonlocal electrical detection of spin accumulation generated by Anomalous Hall effects in mesoscopic Ni_81Fe_19 films
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Spin accumulation generated by the anomalous Hall effects (AHE) in mesoscopic ferromagnetic Ni81Fe19 (permalloy or Py) films is detected electrically by a nonlocal method. The reciprocal phenomenon, inverse spin Hall effects (ISHE), can also be generated and detected all-electrically in the same structure. For accurate quantitative analysis, a series of nonlocal AHE/ISHE structures and supplementary structures are fabricated on each sample substrate to account for statistical variations and to accurately determine all essential physical parameters in-situ. By exploring Py thicknesses of 4 nm, 8 nm, and 12 nm, the Py spin diffusion length {lambda}_Py is found to be much shorter than the film thicknesses. The product of {lambda}_Py and the Py spin Hall angle {alpha}_SH is determined to be independent of thickness and resistivity: {alpha}_SH*{lambda}_Py= (0.066 +/- 0.009) nm at 5 K and (0.041 +/- 0.010) nm at 295 K. These values are comparable to those obtained from mesoscopic Pt films.
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The energy efficiency of the spin Hall effects (SHE) can be enhanced if the electrical conductivity is decreased without sacrificing the spin Hall conductivity. The resistivity of Pt films can be increased to 150-300 {mu}{Omega}*cm by mesoscopic lateral confinement, thereby decreasing the conductivity. The SHE and inverse spin Hall effects (ISHE) in these mesoscopic Pt films are explored at 10 K by using the nonlocal spin injection/detection method. All relevant physical quantities are determined in-situ on the same substrate, and a quantitative approach is developed to characterize all processes effectively. Extensive measurements with various Pt thickness values reveal an upper limit for the Pt spin diffusion length: {lambda}_pt<0.8 nm. The average product of {lambda}_pt and the Pt spin Hall angle {alpha}_H is substantial: {alpha}_H*{lambda}_pt=(0.142 +/- 0.040)nm for 4 nm thick Pt, though a gradual decrease is observed at larger Pt thickness. The results suggest enhanced spin Hall effects in resistive mesoscopic Pt films.
The understanding of spin dynamics in laterally confined structures on sub-micron length scales has become a significant aspect of the development of novel magnetic storage technologies. Numerous ferromagnetic resonance measurements, optical characterization by Kerr microscopy and Brillouin light scattering spectroscopy and x-ray studies were carried out to detect the dynamics in patterned magnetic antidot lattices. Here, we investigate Oersted-field driven spin dynamics in rectangular Ni80Fe20/Pt antidot lattices with different lattice parameters by electrical means and compare them to micromagnetic simulations. When the system is driven to resonance, a dc voltage across the length of the sample is detected that changes its sign upon field reversal, which is in agreement with a rectification mechanism based on the inverse spin Hall effect. Furthermore, we show that the voltage output scales linearly with the applied microwave drive in the investigated range of powers. Our findings have direct implications on the development of engineered magnonics applications and devices.
We describe electrical detection of spin pumping in metallic nanostructures. In the spin pumping effect, a precessing ferromagnet attached to a normal-metal acts as a pump of spin-polarized current, giving rise to a spin accumulation. The resulting spin accumulation induces a backflow of spin current into the ferromagnet and generates a dc voltage due to the spin dependent conductivities of the ferromagnet. The magnitude of such voltage is proportional to the spin-relaxation properties of the normal-metal. By using platinum as a contact material we observe, in agreement with theory, that the voltage is significantly reduced as compared to the case when aluminum was used. Furtheremore, the effects of rectification between the circulating rf currents and the magnetization precession of the ferromagnet are examined. Most significantly, we show that using an improved layout device geometry these effects can be minimized.
Anomalous spin Hall effects that belong to the intrinsic type in Dresselhaus (110) quantum wells are discussed. For the out-of-plane spin component, antisymmetric current-induced spin polarization induces opposite spin Hall accumulation, even though there is no spin-orbit force due to Dresselhaus (110) coupling. A surprising feature of this spin Hall induction is that the spin accumulation sign does not change upon bias reversal. Contribution to the spin Hall accumulation from the spin Hall induction and the spin deviation due to intrinsic spin-orbit force as well as extrinsic spin scattering, can be straightforwardly distinguished simply by reversing the bias. For the inplane component, inclusion of a weak Rashba coupling leads to a new type of $S_y$ intrinsic spin Hall effect solely due to spin-orbit-force-driven spin separation.
TmFeO$_3$ (TFO) is a canted antiferromagnet that undergoes a spin reorientation transition (SRT) with temperature between 82 K and 94 K in single crystals. In this temperature region, the Neel vector continuously rotates from the crystallographic $c$-axis (below 82 K) to the $a$-axis (above 94 K). The SRT allows for a temperature control of distinct antiferromagnetic states without the need for a magnetic field, making it apt for applications working at THz frequencies. For device applications, thin films of TFO are required as well as an electrical technique for reading out the magnetic state. Here we demonstrate that orthorhombic TFO thin films can be grown by pulsed laser deposition and the detection of the SRT in TFO thin films can be accessed by making use of the all electrical spin Hall magnetoresistance (SMR), in good agreement for the temperature range where the SRT occurs. Our results demonstrate that one can electrically detect the SRT in insulators.
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