No Arabic abstract
We describe electrical detection of spin pumping in metallic nanostructures. In the spin pumping effect, a precessing ferromagnet attached to a normal-metal acts as a pump of spin-polarized current, giving rise to a spin accumulation. The resulting spin accumulation induces a backflow of spin current into the ferromagnet and generates a dc voltage due to the spin dependent conductivities of the ferromagnet. The magnitude of such voltage is proportional to the spin-relaxation properties of the normal-metal. By using platinum as a contact material we observe, in agreement with theory, that the voltage is significantly reduced as compared to the case when aluminum was used. Furtheremore, the effects of rectification between the circulating rf currents and the magnetization precession of the ferromagnet are examined. Most significantly, we show that using an improved layout device geometry these effects can be minimized.
A ferromagnet can resonantly absorbs rf radiation to sustain a steady precession of the magnetization around an internal or applied magnetic field. We show that under these ferromagnetic resonance (FMR) conditions, a dc voltage is generated at a normal-metal electric contact to a ferromagnet with spin-flip scattering. This mechanism allows an easy electric detection of magnetization dyamics.
Quantum Hall phases are gapped in the bulk but support chiral edge modes, both charged and neutral. Here we consider a circuit where the path from the source of electric current to the drain necessarily passes through a segment consisting solely of neutral modes. Surprisingly, we find that upon biasing the source, a dc electric current is detected at the drain. Thus, neutral modes carry information that can be used to nonlocally reconstruct a dc charge current. Our protocol can be used to detect neutral modes, not only the edge modes of a quantum Hall system, but also those that have a non-quantum Hall origin. We conclude with a possible experimental realization of this phenomenon.
We report direct electrical detection of spin pumping, using a lateral normal metal/ferromagnet/normal metal device, where a single ferromagnet in ferromagnetic resonance pumps spin polarized electrons into the normal metal, resulting in spin accumulation. The resulting backflow of spin current into the ferromagnet generates a d.c. voltage due to the spin dependent conductivities of the ferromagnet. By comparing different contact materials (Al and /or Pt), we find, in agreement with theory, that the spin related properties of the normal metal dictate the magnitude of the d.c. voltage.
We present a theoretical model that describes electrical spin-detection at a ferromagnet/semiconductor interface. We show that the sensitivity of the spin detector has strong bias dependence which, in the general case, is dramatically different from that of the tunneling current spin polarization. We show that this bias dependence originates from two distinct physical mechanisms: 1) the bias dependence of tunneling current spin polarization, which is of microscopic origin and depends on the specific properties of the interface, and 2) the macroscopic electron spin transport properties in the semiconductor. Numerical results show that the magnitude of the voltage signal can be tuned over a wide range from the second effect which suggests a universal method for enhancing electrical spin-detection sensitivity in ferromagnet/semiconductor tunnel contacts. Using first-principles calculations we examine the particular case of a Fe/GaAs Schottky tunnel barrier and find very good agreement with experiment. We also predict the bias dependence of the voltage signal for a Fe/MgO/GaAs tunnel structure spin detector.
Voltage induced magnetization dynamics of magnetic thin films is a valuable tool to study anisotropic fields, exchange couplings, magnetization damping and spin pumping mechanism. A particularly well established technique is the ferromagnetic resonance (FMR) generated by the coupling of microwave photons and magnetization eigenmodes in the GHz range. Here we review the basic concepts of the so-called acoustic ferromagnetic resonance technique (a-FMR) induced by the coupling of surface acoustic waves (SAW) and magnetization of thin films. Interestingly, additional to the benefits of the microwave excited FMR technique, the coupling between SAW and magnetization also offers fertile ground to study magnon-phonon and spin rotation couplings. We describe the in-plane magnetic field angle dependence of the a-FMR by measuring the absorption / transmission of SAW and the attenuation of SAW in the presence of rotational motion of the lattice, and show the consequent generation of spin current by acoustic spin pumping.