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Register a new userThermal runaway of metal nano-tips during intense electron emission
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When an electron emitting tip is subjected to very high electric fields, plasma forms even under ultra high vacuum conditions. This phenomenon, known as vacuum arc, causes catastrophic surface modifications and constitutes a major limiting factor not only for modern electron sources, but also for many large-scale applications such as particle accelerators, fusion reactors etc. Although vacuum arcs have been studied thoroughly, the physical mechanisms that lead from intense electron emission to plasma ignition are still unclear. In this article, we give insights to the atomic scale processes taking place in metal nanotips under intense field emission conditions. We use multi-scale atomistic simulations that concurrently include field-induced forces, electron emission with finite-size and space-charge effects, Nottingham and Joule heating. We find that when a sufficiently high electric field is applied to the tip, the emission-generated heat partially melts it and the field-induced force elongates and sharpens it. This initiates a positive feedback thermal runaway process, which eventually causes evaporation of large fractions of the tip. The reported mechanism can explain the origin of neutral atoms necessary to initiate plasma, a missing key process required to explain the ignition of a vacuum arc. Our simulations provide a quantitative description of in the conditions leading to runaway, which shall be valuable for both field emission applications and vacuum arc studies.
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Nanoprobe X-ray diffraction (nXRD) using focused synchrotron radiation is a powerful technique to study the structural properties of individual semiconductor nanowires. However, when performing the experiment under ambient conditions, the required high X-ray dose and prolonged exposure times can lead to radiation damage. To unveil the origin of radiation damage, we compare nXRD experiments carried out on individual semiconductor nanowires in their as grown geometry both under ambient conditions and under He atmosphere at the microfocus station of the P08 beamline at the 3rd generation source PETRA III. Using an incident X-ray beam energy of 9 keV and photon flux of 10$^{10}$s$^{-1}$, the axial lattice parameter and tilt of individual GaAs/In$_{0.2}$Ga$_{0.8}$As/GaAs core-shell nanowires were monitored by continuously recording reciprocal space maps of the 111 Bragg reflection at a fixed spatial position over several hours. In addition, the emission properties of the (In,Ga)As quantum well, the atomic composition of the exposed nanowires and the nanowire morphology are studied by cathodoluminescence spectroscopy, energy dispersive X-ray spectroscopy and scanning electron microscopy, respectively, both prior to and after nXRD exposure. Nanowires exposed under ambient conditions show severe optical and morphological damage, which was reduced for nanowires exposed under He atmosphere. The observed damage can be largely attributed to an oxidation process from X-ray induced ozone reactions in air. Due to the lower heat transfer coefficient compared to GaAs, this oxide shell limits the heat transfer through the nanowire side facets, which is considered as the main channel of heat dissipation for nanowires in the as-grown geometry.
It is textbookly regarded that phonons, i.e., an energy quantum of propagating lattice waves, are the main heat carriers in perfect crystals. As a result, in many crystals, e.g., bulk silicon, the temperature-dependent thermal conductivity shows the classical 1/T relationship because of the dominant Umklapp phonon-phonon scattering in the systems. However, the thermal conductivity of many crystalline metal-organic frameworks is very low and shows no, a weakly negative and even a weakly positive temperature dependence (glass-like thermal conductivity). It has been in debate whether the thermal transport can be still described by phonons in metal-organic frameworks. Here, by studying two typical systems, i.e., crystal zeolitic imidazolate framework-4 (cZIF-4) and crystal zeolitic imidazolate framework-62 (c-ZIF62), we prove that the ultralow thermal conductivity in metal-organic frameworks is resulting from the strong phonon intrinsic structure scattering due to the large mass difference and the large cavity between Zn and N atoms. Our mean free path spectrum analysis shows that both propagating and non-propagating anharmonic vibrational modes exist in the systems, and contribute largely to the thermal conductivity. The corresponding weakly negative or positive temperature dependence of the thermal conductivity is stemming from the competition between the propagating and non-propagating anharmonic vibrational modes. Our study here provides a fundamental understanding of thermal transport in metal-organic frameworks and will guide the design of the thermal-related applications using metal-organic frameworks, e.g., inflammable gas storage, chemical catalysis, solar thermal conversion and so on.
Spin pumping by ferromagnetic resonance is one of the most common technique to determine spin hall angles, Edelstein lengths or spin diffusion lengths of a large variety of materials. In recent years, rising concerns have appeared regarding the interpretation of these experiments, underlining that the signal could arise purely from thermoelectric effects, rather than from coherent spin pumping. Here, we propose a method to evaluate the presence or absence of thermal effects in spin pumping signals, by combining bolometry and spin pumping by ferromagnetic resonance measurements, and comparing their timescale. Using a cavity to perform the experiments on PtPermalloy and La0.7Sr0.3MnO3Pt samples, we conclude on the absence of any measurable thermoelectric contribution such as the spin Seebeck and anomalous Nernst effects at resonance
Atomic precision advanced manufacturing (APAM) offers creation of donor devices in an atomically thin layer doped beyond the solid solubility limit, enabling unique device physics. This presents an opportunity to use APAM as a pathfinding platform to investigate digital electronics at the atomic limit. Scaling to smaller transistors is increasingly difficult and expensive, necessitating the investigation of alternative fabrication paths that extend to the atomic scale. APAM donor devices can be created using a scanning tunneling microscope (STM). However, these devices are not currently compatible with industry standard fabrication processes. There exists a tradeoff between low thermal budget (LT) processes to limit dopant diffusion and high thermal budget (HT) processes to grow defect-free layers of epitaxial Si and gate oxide. To this end, we have developed an LT epitaxial Si cap and LT deposited Al2O3 gate oxide integrated with an atomically precise single-electron transistor (SET) that we use as an electrometer to characterize the quality of the gate stack. The surface-gated SET exhibits the expected Coulomb blockade behavior. However, the leverage of the gate over the SET is limited by defects in the layers above the SET, including interfaces between the Si and oxide, and structural and chemical defects in the Si cap. We propose a more sophisticated gate stack and process flow that is predicted to improve performance in future atomic precision devices.
We report a comprehensive study on the electrochemical performance of four different Transition Metal Oxides encapsulated inside carbon nanotubes (CNT). Irrespective of the type of oxide-encapsulate, all these samples exhibit superior cyclic stability as compared to the bare-oxide. Innovative use of camphor during sample synthesis enables precise control over the morphology of these self-organized carbon nanotube structures, which in turn appears to play a crucial role in the magnitude of the specific capacity. A comparative evaluation of the electrochemical data on different samples bring forward interesting inferences pertaining to the morphology, filling fraction of the oxide-encapsulate, and the presence of oxide nano-particles adhering outside the filled CNT. Our results provides useful pointers towards the optimization of critical parameters, thus paving the way for using these synthetically encapsulated and self-organized carbon nanotube structures as anode materials for Li-ion batteries, and possibly other electrochemical applications.
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