Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userCleavage Tendency of Anisotropic Two Dimensional Materials: ReX2 (X=S, Se) and WTe2
173
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
With unique distorted 1T structure and the associated in-plane anisotropic properties, mono- and few-layer ReX2 (X=S, Se) have recently attracted particular interest. Based on experiment and first-principles calculations, we investigate the fracture behavior of ReX2. We find that the cleaved edges of ReX2 flakes usually form an angle of ~120{deg} or ~60{deg}. In order to understand such phenomenon, we perform comprehensive investigations on the uniaxial tensile stress-strain relation of monolayer and multi-layer ReX2 sheets. Our numerical calculation shows that the particular cleaved edges of ReX2 flakes are caused by unique anisotropic ultimate tensile strengths and critical strains. We also calculate the stress-strain relation of WTe2, which explains why their cleaved edges are not corresponding to the principle axes. Our proposed mechanism about the fracture angle has also been supported by the calculated cleavage energies and surface energies for different edge surfaces.
rate research
Read More
Advanced microscopy and/or spectroscopy tools play indispensable role in nanoscience and nanotechnology research, as it provides rich information about the growth mechanism, chemical compositions, crystallography, and other important physical and chemical properties. However, the interpretation of imaging data heavily relies on the intuition of experienced researchers. As a result, many of the deep graphical features obtained through these tools are often unused because of difficulties in processing the data and finding the correlations. Such challenges can be well addressed by deep learning. In this work, we use the optical characterization of two-dimensional (2D) materials as a case study, and demonstrate a neural-network-based algorithm for the material and thickness identification of exfoliated 2D materials with high prediction accuracy and real-time processing capability. Further analysis shows that the trained network can extract deep graphical features such as contrast, color, edges, shapes, segment sizes and their distributions, based on which we develop an ensemble approach topredict the most relevant physical properties of 2D materials. Finally, a transfer learning technique is applied to adapt the pretrained network to other applications such as identifying layer numbers of a new 2D material, or materials produced by a different synthetic approach. Our artificial-intelligence-based material characterization approach is a powerful tool that would speed up the preparation, initial characterization of 2D materials and other nanomaterials and potentially accelerate new material discoveries.
Transition metal dichalcogenides are rich in their structural phases, e.g. 1T-TaS2 and 1T-TaSe2 form charge density wave (CDW) under low temperature with interesting and exotic properties. Here, we present a systematic study of different structures in two-dimensional TaX2 (X=S, Se, Te) using density functional theory calculations with consideration of van der Waals interaction. All the normal phases present metal characteristics with various ground state and magnetic properties. The lattice reconstruction of CDW drastically affects the electronic and structural characteristics of 1T-TaS2 and 1T-TaSe2, leading to a transition from metal to insulator and an emergence of magnetic moment within periodic atomic clusters called the Star of David. The evaluated Heisenberg couplings indicate the weak ferromagnetic coupling between the clusters in monolayer. Furthermore, in bilayer commensurate CDW cases, we find intriguing phenomenon of the varying magnetic properties with different stacking orders. The magnetic moment in each layer disappears when two layers are coupled, but may sustain in certain stackings of interlayer antiferromagnetic configurations.
Defects play a significant role in optical properties of semiconducting two-dimensional transition metal dichalcogenides (TMDCs). In ultra-thin MoSe2, a remarkable feature at ~250 cm-1 in Raman spectra is ascribed to be a defect-related mode. Recent attempts failed to explain the origin of this peak, leaving it being a mystery. Here in this work, we demonstrate that this peak is a Se vacancy induced defect mode. Heat effect and hydrogen etching are two main factors to introduce Se vacancies in CVD process of growing MoSe2. A phonon confinement model can well explain the behaviors of intrinsic Raman modes. Density functional theory (DFT) calculation reveals that single Se vacancy (VSe) is responsible for the appearance of Raman peak at ~250 cm-1 and this mode is an A1g-like localized mode which is also confirmed by polarized Raman scattering experiment. The relative strength of this mode can be a characterization of the quality of 2D MoSe2. This work may offer a simple method to tailor chalcogenide vacancies in 2D TMDCs and provide a way to study their vibrational properties.
The relation between unusual Mexican-hat band dispersion, ferromagnetism and ferroelasticity is investigated using a combination of analytical, first-principles and phenomenological methods. The class of material with Mexican-hat band edge is studied using the $alpha$-SnO monolayer as a prototype. Such band edge causes a van Hove singularity diverging with $frac{1}{sqrt{E}}$, and in p-type material leads to spatial and/or time-reversal spontaneous symmetry breaking. We show that an unexpected multiferroic phase is obtained in a range of hole density for which the material presents ferromagnetism and ferroelasticity simultaneously.
In the present study, the structural, electronic, optical and thermoelectric properties of two isostructural chalcogenide materials, NaInS2 and NaInSe2 with hexagonal symmetry (R-3m) have been studied using the first principles method. A very good agreement has been found between our results with the available experimental and theoretical ones. The studied materials are semiconducting in nature as confirmed from the electronic band structure and optical properties.The strong hybridizations among s orbitals of Na, In and Se atoms push the bottom of the conduction band downward resulting in a narrower band gap of NaInSe2 compared to that of NaInS2 compound. Different optical (dielectric function, photoconductivity, absorption coefficient, reflectivity, refractive index and loss function) and thermoelectric (Seebeck coefficient, electrical conductivity, power factor and thermal conductivity) properties of NaInX2 (X = S, Se) have been studied in detail for the first time. It is found that all these properties are significantly anisotropic due to the strongly layered structure of NaInX2 (X = S, Se). Strong optical absorption with sharp peaks is found in the far visible to mid ultraviolet (UV) regions while the reflectivity is low in the UV region for both the compounds. Such features indicate feasibility of applications in optoelectronic sector.The calculated thermoelectric power factors at 1000 K for NaInS2 and NaInSe2 along a-axis are found to be 151.5 micro Watt /cmK2 and 154 micro Watt/cmK2, respectively and the corresponding ZT values are ~0.70. The obtained thermal conductivity along a-axis for both compounds is high (~22 W/mK).This suggests that the reduction of such high thermal conductivity is important to achieve higher ZT values of the NaInX2(X = S, Se) compounds.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
