No Arabic abstract
In this work, we present a model of the surface states of nonsymmorphic semimetals. These are derived from surface mass terms that lift the high degeneracy imposed in the band structure by the nonsymmorphic bulk symmetries. Reflecting the reduced symmetry at the surface, the bulk bands are strongly modified. This leads to the creation of two-dimensional floating bands, which are distinct from Shockley states, quantum well states or topologically protected surface states. We focus on the layered semimetal ZrSiS to clarify the origin of its surface states. We demonstrate an excellent agreement between DFT calculations and ARPES measurements and present an effective four-band model in which similar surface bands appear. Finally, we emphasize the role of the surface chemical potential by comparing the surface density of states in samples with and without potassium coating. Our findings can be extended to related compounds and generalized to other crystals with nonsymmorphic symmetries.
ZrSiS, an intriguing candidate of topological nodal line semimetals, was discovered to have exotic surface floating two-dimensional (2D) electrons [Phys. Rev. X 7, 041073 (2017)], which are likely to interact with surface phonons. Here, we reveal a prominent Kohn anomaly in a surface phonon branch by mapping out the surface phonon dispersions of ZrSiS using high-resolution electron energy loss spectroscopy. Theoretical analysis via an electron-phonon coupling (EPC) model attributes the strong renormalization of the surface phonon branch to the interactions with the surface floating 2D electrons. With the random phase approximation, we calculate the phonon self-energy and evaluate the mode-specific EPC constant by fitting the experimental data. The EPC picture provided here may be important for potential applications of topological nodal line semimetals.
The ultrafast optical response of two nodal-line semimetals, ZrSiS and ZrSiSe, was studied in the near-infrared using transient reflectivity. The two materials exhibit similar responses, characterized by two features, well resolved in time and energy. The first transient feature decays after a few hundred femtoseconds, while the second lasts for nanoseconds. Using Drude-Lorentz fits of the materials equilibrium reflectance, we show that the fast response is well-represented by a decrease of the Drude plasma frequency, and the second feature by an increase of the Drude scattering rate. This directly connects the transient data to a physical picture in which carriers, after being excited away from the Fermi energy, return to that vicinity within a few hundred femtoseconds by sharing their excess energy with the phonon bath, resulting in a hot lattice that relaxes only through slow diffusion processes (ns). The emerging picture reveals that the sudden change of the density of carriers at the Fermi level instantaneously modifies the transport properties of the materials on a timescale not compatible with electron phonon thermalization and is largely driven by the reduced density of states at the nodal line.
We demonstrate the successive appearance of the exciton, biexciton, and P band of the exciton-exciton scattering with increasing excitation power in the photoluminescence of indium selenide layered crystals. The strict energy and momentum conservation rules of the P band are used to reexamine the exciton binding energy. The new value $geq 20$ meV is markedly higher than the currently accepted 14 meV, being however well consistent with the robustness of excitons up to room temperature. A peak controlled by the Sommerfeld factor is found near the bandgap ($sim 1.36$ eV), which puts the question on the pure three-dimensional character of the exciton in InSe, which has been assumed up to now. Our findings are of paramount importance for the successful application of InSe in nanophotonics.
The unoccupied states in topological insulators Bi_2Se_3, PbSb_2Te_4, and Pb_2Bi_2Te_2S_3 are studied by the density functional theory methods. It is shown that a surface state with linear dispersion emerges in the inverted conduction band energy gap at the center of the surface Brillouin zone on the (0001) surface of these insulators. The alternative expression of Z_2 invariant allowed us to show that a necessary condition for the existence of the second Gamma Dirac cone is the presence of local gaps at the time reversal invariant momentum points of the bulk spectrum and change of parity in one of these points.
By using angle-resolved photoemission spectroscopy combined with first-principles calculations, we reveal that the topmost unit cell of ZrSnTe crystal hosts two-dimensional (2D) electronic bands of topological insulator (TI) state, though such a TI state is defined with a curved Fermi level instead of a global band gap. Furthermore, we find that by modifying the dangling bonds on the surface through hydrogenation, this 2D band structure can be manipulated so that the expected global energy gap is most likely to be realized. This facilitates the practical applications of 2D TI in heterostructural devices and those with surface decoration and coverage. Since ZrSnTe belongs to a large family of compounds having the similar crystal and band structures, our findings shed light on identifying more 2D TI candidates and superconductor-TI heterojunctions supporting topological superconductors.