Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userDzyaloshinskii-Moryia interaction at an antiferromagnetic interface: first-principles study of FeIr bilayers on Rh(001)
58
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
We study the magnetic interactions in atomic layers of Fe and 5d transition-metals such as Os, Ir, and Pt on the (001) surface of Rh using first-principles calculations based on density functional theory. For both stackings of the 5d-Fe bilayer on Rh(001) we observe a transition from an antiferromagnetic to a ferromagnetic nearest-neighbor exchange interaction upon 5d band filling. In the sandwich structure 5d/Fe/Rh(001) the nearest neighbor exchange is significantly reduced. For FeIr bilayers on Rh(001) we consider spin spiral states in order to determine exchange constants beyond nearest neighbors. By including spin-orbit coupling we obtain the Dzyaloshinskii-Moriya interaction (DMI). The magnetic interactions in Fe/Ir/Rh(001) are similar to those of Fe/Ir(001) for which an atomic scale spin lattice has been predicted. However, small deviations between both systems remain due to the different lattice constants and the Rh vs. Ir surface layers. This leads to slightly different exchange constants and DMI and the easy magnetization direction switches from out-of-plane for Fe/Ir(001) to in-plane for Fe/Ir/Rh(001). Therefore a fine tuning of magnetic interactions is possible by using single 5d transition-metal layers which may allow to tailor antiferromagnetic skyrmions in this type of ultrathin films. In the sandwich structure Ir/Fe/Rh(001) we find a strong exchange frustration due to strong hybridization of the Fe layer with both Ir and Rh which drastically reduces the nearest-neighbor exchange. The energy contribution from the DMI becomes extremely large and DMI beyond nearest neighbors cannot be neglected. We attribute the large DMI to the low coordination of the Ir layer at the surface. We demonstrate that higher- order exchange interactions are significant in both systems which may be crucial for the magnetic ground state.
rate research
Read More
We present a Greens function approach to calculate the Dzyaloshinskii-Moriya interactions (DMI) from first principles electronic structure calculations, that is computationally more efficient and accurate than the most-commonly employed supercell and generalized Bloch-based approaches. The method is applied to the (111) Co/Pt bilayer where the Co- and/or Pt-thickness dependence of the DMI coefficients are calculated. Overall, the calculated DMI are in relatively good agreement with the corresponding values reported experimentally. Furthermore, we investigate the effect of strain in the DMI tensor elements and show that the isotropic N{e}el DMI can be significantly modulated by the normal strains, $epsilon_{xx},epsilon_{yy}$ and is relatively insensitive to the shear strain, $epsilon_{xy}$. Moreover, we show that anisotropic strains, $(epsilon_{xx}-epsilon_{yy})$ and $epsilon_{xy}$, result in the emergence of anisotropic N{e}el- and Bloch-type DMIs, respectively.
We report on the study of both perpendicular magnetic anisotropy (PMA) and Dzyaloshinskii-Moriya interaction (DMI) at an oxide/ferromagnetic metal (FM) interface, i.e. BaTiO3 (BTO)/CoFeB. Thanks to the functional properties of the BTO film and the capability to precisely control its growth, we are able to distinguish the dominant role of the oxide termination (TiO2 vs BaO), from the moderate effect of ferroelectric polarization in the BTO film, on the PMA and DMI at the oxide/FM interface. We find that the interfacial magnetic anisotropy energy of the BaO-BTO/CoFeB structure is two times larger than that of the TiO2-BTO/CoFeB, while the DMI of the TiO2-BTO/CoFeB interface is larger. We explain the observed phenomena by first-principles calculations, which ascribe them to the different electronic states around the Fermi level at the oxide/ferromagnetic metal interfaces and the different spin-flip processes. This study paves the way for further investigation of the PMA and DMI at various oxide/FM structures and thus their applications in the promising field of energy-efficient devices.
A major challenge for future spintronics is to develop suitable spin transport channels with long spin lifetime and propagation length. Graphene can meet these requirements, even at room temperature. On the other side, taking advantage of the fast motion of chiral textures, i.e., Neel-type domain walls and magnetic skyrmions, can satisfy the demands for high-density data storage, low power consumption and high processing speed. We have engineered epitaxial structures where an epitaxial ferromagnetic Co layer is sandwiched between an epitaxial Pt(111) buffer grown in turn onto MgO(111) substrates and a graphene layer. We provide evidence of a graphene-induced enhancement of the perpendicular magnetic anisotropy up to 4 nm thick Co films, and of the existence of chiral left-handed Neel-type domain walls stabilized by the effective Dzyaloshinskii-Moriya interaction (DMI) in the stack. The experiments show evidence of a sizeable DMI at the gr/Co interface, which is described in terms of a conduction electron mediated Rashba-DMI mechanism and points opposite to the Spin Orbit Coupling-induced DMI at the Co/Pt interface. In addition, the presence of graphene results in: i) a surfactant action for the Co growth, producing an intercalated, flat, highly perfect fcc film, pseudomorphic with Pt and ii) an efficient protection from oxidation. The magnetic chiral texture is stable at room temperature and grown on insulating substrate. Our findings open new routes to control chiral spin structures using interfacial engineering in graphene-based systems for future spin-orbitronics devices fully integrated on oxide substrates.
The electronic and thermal transport properties have been systematically investigated in monolayer C$_4$N$_3$H with first-principles calculations. The intrinsic thermal conductivity of monolayer C$_4$N$_3$H was calculated coupling with phonons Boltzmann transport equation. For monolayer C$_4$N$_3$H, the thermal conductivity (k{appa}) (175.74 and 157.90 W m-1K-1 with a and b-plane, respectively) is significantly lower than that of graphene (3500 Wm$^{-1}$K$^{-1}$) and C3N(380 Wm$^{-1}$K$^{-1}$). Moreover, it is more than the second time higher than C$_2$N (82.88 Wm$^{-1}$K$^{-1}$) at 300 K. Furthermore, the group velocities, relax time, anharmonicity, as well as the contribution from different phonon branches, were thoroughly discussed in detail. A comparison of the thermal transport characters among 2D structure for monolayer C$_4$N$_3$H, graphene, C$_2$N and C$_3$N has been discussed. This work highlights the essence of phonon transport in new monolayer material.
Spin Hall magnetoresistance (SMR) has been observed in Pt/NiO/Y3Fe5O12 (YIG) heterostructures with characteristics very different from those in Pt/YIG. We show that the SMR in Pt/NiO/YIG strongly correlates with spin conductance, both sharing very strong temperature dependence due to antiferromagnetic magnons and spin fluctuation. This phenomenon indicates that spin current generated by spin Hall effect in the Pt transmits through the insulating NiO and is reflected from the NiO/YIG interface. Inverted SMR has been observed below a temperature which increases with the NiO thickness, suggesting spin-flip reflection from the antiferromagnetic NiO exchange coupled with the YIG.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
