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Investigations into the microwave surface impedance of superconducting resonators have led to the development of single photon counters that rely on kinetic inductance for their operation. While concurrent progress in additive manufacturing, `3D printing, opens up a previously inaccessible design space for waveguide resonators. In this manuscript, we present results from the first synthesis of these two technologies in a titanium, aluminum, vanadium (Ti-6Al-4V) superconducting radio frequency resonator which exploits a design unattainable through conventional fabrication means. We find that Ti-6Al-4V has two distinct superconducting transition temperatures observable in heat capacity measurements. The higher transition temperature is in agreement with DC resistance measurements. While the lower transition temperature, not previously known in literature, is consistent with the observed temperature dependence of the superconducting microwave surface impedance. From the surface reactance, we extract a London penetration depth of $8pm3{mu}$m - roughly an order of magnitude larger than other titanium alloys and several orders of magnitude larger than other conventional elemental superconductors. This large London penetration depth suggests that Ti-6Al-4V may be a suitable material for high kinetic inductance applications such as single photon counting or parametric amplification used in quantum computing.
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We report superconducting kinetic inductance memory (SKIM) element, which can be controlled exclusively by the bias supercurrent, without involving magnetic fields and heating elements. The SKIM is non-volatile memory. The device is made of Nb and it can operate reliable up to 2.8 K. The achieved error rate is as low as one in 100000 operations.
Boron-doped diamond granular thin films are known to exhibit superconductivity with an optimal critical temperature of Tc = 7.2K. Here we report the measured complex surface impedance of Boron-doped diamond films in the microwave frequency range using a resonant technique. Experimentally measured inductance values are in good agreement with estimates obtained from the normal state sheet resistance of the material. The magnetic penetration depth temperature dependence is consistent with that of a fully-gapped s-wave superconductor. Boron-doped diamond films should find application where high kinetic inductance is needed, such as microwave kinetic inductance detectors and quantum impedance devices.
Samples were examined using a superconducting (Nb) neutron imaging system employing a delay-line technique which in previous studies was shown to have high spatial resolution. We found excellent correspondence between neutron transmission and scanning electron microscope (SEM) images of Gd islands with sizes between 15 and 130 micrometer which were thermally-sprayed onto a Si substrate. Neutron transmission images could be used to identify tiny voids in a thermally-sprayed continuous Gd2O3 film on a Si substrate which could not be seen in SEM images. We also found that neutron transmission images revealed pattern formations, mosaic features and co-existing dendritic phases in Woods metal samples with constituent elements Bi, Pb, Sn and Cd. These results demonstrate the merits of the current-biased kinetic inductance detector (CB-KID) system for practical studies in materials science. Moreover, we found that operating the detector at a more optimal temperature (7.9 K) appreciably improved the effective detection efficiency when compared to previous studies conducted at 4 K. This is because the effective size of hot-spots in the superconducting meanderline planes increases with temperature, which makes particle detections more likely.
We demonstrate that a high kinetic inductance disordered superconductor can realize a low microwave loss, non-dissipative circuit element with an impedance greater than the quantum resistance ($R_Q = h/4e^2 simeq 6.5kOmega$). This element, known as a superinductor, can produce a quantum circuit where charge fluctuations are suppressed. The superinductor consists of a 40 nm wide niobium nitride nanowire and exhibits a single photon quality factor of $2.5 times 10^4$. Furthermore, by examining loss rates, we demonstrate that the dissipation of our nanowire devices can be fully understood in the framework of two-level system loss.
We evaluate the performance of hybrid microwave resonators made by combining sputtered Nb thin films with Tungsten nanowires grown with a He-beam induced deposition technique. Depending on growth conditions the nanowires have a typical width $win[35-75]$~nm and thickness $tin[5-40]$~nm. We observe a high normal state resistance $R_{sq}in [65-150]$ $Omega/sq$ which together with a critical temperature $T_cin[4-6]~K$ ensure a high kinetic inductance making the resonator strongly nonlinear. Both lumped and coplanar waveguide resonators were fabricated and measured at low temperature exhibiting internal quality factors up to $3990$ at $4.5$~GHz in the few photon regime. Analyzing the wire length, temperature and microwave power dependence we extracted a kinetic inductance for the W nanowire of $L_Kapprox15$ pH/sq, which is 250 times higher than the geometrical inductance, and a Kerr non-linearity as high as $K_{W,He}/2pi=200 pm 120$~Hz/photon at $4.5$~GHz. The nanowires made with the helium focused ion beam are thus versatile objects to engineer compact, high impedance, superconducting environments with a mask and resist free direct write process.
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