No Arabic abstract
We present low-temperature measurements of low-loss superconducting nanowire-embedded resonators in the low-power limit relevant for quantum circuits. The superconducting resonators are embedded with superconducting nanowires with widths down to 20nm using a neon focused ion beam. In the low-power limit, we demonstrate an internal quality factor up to 3.9x10^5 at 300mK [implying a two-level-system-limited quality factor up to 2x10^5 at 10 mK], not only significantly higher than in similar devices but also matching the state of the art of conventional Josephson-junction-embedded resonators. We also show a high sensitivity of the nanowire to stray infrared photons, which is controllable by suitable precautions to minimize stray photons in the sample environment. Our results suggest that there are excellent prospects for superconducting-nanowire-based quantum circuits.
We have used a neon focused-ion-beam to fabricate both nanoscale Nb Dayem bridges and NbN phase-slip nanowires located at the short-circuited end of quarter-wavelength coplanar waveguide resonators. The Dayem bridge devices show flux-tunability and intrinsic quality factor exceeding 10,000 at 300 mK up to local fields of at least 60 mT. The NbN nanowires show signatures of incoherent quantum tunnelling of flux at 300 mK.
Superconducting nanowires, with a critical temperature of 5.2 K, have been synthesized using an ion-beam-induced deposition, with a Gallium focused ion beam and Tungsten Carboxyl, W(CO)6, as precursor. The films are amorphous, with atomic concentrations of about 40, 40, and 20 % for W, C, and Ga, respectively. Zero Kelvin values of the upper critical field and coherence length of 9.5 T and 5.9 nm, respectively, are deduced from the resistivity data at different applied magnetic fields. The critical current density is Jc= 1.5 10^5 A/cm2 at 3 K. This technique can be used as a template-free fabrication method for superconducting devices.
We have fabricated C-Ga-O nanowires by gallium focused ion beam-induced deposition from the carbon-based precursor phenanthrene. The electrical conductivity of the nanowires is weakly temperature dependent below 300 K, and indicates a transition to a superconducting state below Tc = 7 K. We have measured the temperature dependence of the upper critical field Hc2(T), and estimate a zero temperature critical field of 8.8 T. The Tc of this material is approximately 40% higher than that of any other direct write nanowire, such as those based on C-W-Ga, expanding the possibility of fabricating direct-write nanostructures that superconduct above liquid helium temperatures
Making use of focused Ga-ion beam (FIB) fabrication technology, the evolution with device dimension of the low-temperature electrical properties of Nb nanowires has been examined in a regime where crossover from Josephson-like to insulating behaviour is evident. Resistance-temperature data for devices with a physical width of order 100 nm demonstrate suppression of superconductivity, leading to dissipative behaviour that is shown to be consistent with the activation of phase-slip below Tc. This study suggests that by exploiting the Ga-impurity poisoning introduced by the FIB into the periphery of the nanowire, a central superconducting phase-slip nanowire with sub-10 nm dimensions may be engineered within the core of the nanowire.
We present very low temperature Scanning Tunneling Microscopy and Spectroscopy (STM/S) measurements in W-based amorphous superconducting nanodeposits grown using a metal-organic precursor and focused-ion-beam. The superconducting gap closely follows s-wave BCS theory, and STS images under magnetic fields show a hexagonal vortex lattice whose orientation is related to features observed in the topography through STM. Our results demonstrate that the superconducting properties at the surface of these deposits are very homogeneous, down to atomic scale. This, combined with the huge nanofabrication possibilities of the focused-ion-beam technique, paves the way to use focused-ion-beam to make superconducting circuitry of many different geometries.