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Register a new userProximity-effect-induced Superconducting Gap in Topological Surface States - A Point Contact Spectroscopy Study of NbSe2/Bi2Se3 Superconductor-Topological Insulator Heterostructures
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Proximity-effect-induced superconductivity was studied in epitaxial topological insulator Bi2Se3 thin films grown on superconducting NbSe2 single crystals. A point contact spectroscopy (PCS) method was used at low temperatures down to 40 mK. An induced superconducting gap in Bi2Se3 was observed in the spectra, which decreased with increasing Bi2Se3 layer thickness, consistent with the proximity effect in the bulk states of Bi2Se3 induced by NbSe2. At very low temperatures, an extra point contact feature which may correspond to a second energy gap appeared in the spectrum. For a 16 quintuple layer Bi2Se3 on NbSe2 sample, the bulk state gap value near the top surface is ~ 159 {mu}eV, while the second gap value is ~ 120 {mu}eV at 40 mK. The second gap value decreased with increasing Bi2Se3 layer thickness, but the ratio between the second gap and the bulk state gap remained about the same for different Bi2Se3 thicknesses. It is plausible that this is due to superconductivity in Bi2Se3 topological surface states induced through the bulk states. The two induced gaps in the PCS measurement are consistent with the three-dimensional bulk state and the two-dimensional surface state superconducting gaps observed in the angle-resolved photoemission spectroscopy (ARPES) measurement.
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We have studied the electron transport properties of topological insulator-related material Bi2Se3 near the superconducting Pb-Bi2Se3 interface, and found that a superconducting state is induced over an extended volume in Bi2Se3. This state can carry a Josephson supercurrent, and demonstrates a gap-like structure in the conductance spectra as probed by a normal-metal electrode. The establishment of the gap is not by confining the electrons into a narrow space close to the superconductor-normal metal interface, as previously observed in other systems, but presumably via electron-electron attractive interaction in Bi2Se3.
We study the proximity effect between the fully-gapped region of a topological insulator in direct contact with an s-wave superconducting electrode (STI) and the surrounding topological insulator flake (TI) in Au/Bi$_{1.5}$Sb$_{0.5}$Te$_{1.7}$Se$_{1.3}$/Nb devices. The conductance spectra of the devices show the presence of a large induced gap in the STI as well as the induction of superconducting correlations in the normal part of the TI on the order of the Thouless energy. The shape of the conductance modulation around zero-energy varies between devices and can be explained by existing theory of s-wave-induced superconductivity in SNN (S is a superconductor, N a superconducting proximized material and N is a normal metal) devices. All the conductance spectra show a conductance dip at the induced gap of the STI.
The combination of superconductivity and the helical spin-momentum locking at the surface state of a topological insulator (TI) has been predicted to give rise to p-wave superconductivity and Majorana bound states. The superconductivity can be induced by the proximity effect of a an s-wave superconductor (S) into the TI. To probe the superconducting correlations inside the TI, dI/dV spectroscopy has been performed across such S-TI interfaces. Both the alloyed Bi$_{1.5}$Sb$_{0.5}$Te$_{1.7}$Se$_{1.3}$ and the stoichiometric BiSbTeSe$_2$ have been used as three dimensional TI. In the case of Bi$_{1.5}$Sb$_{0.5}$Te$_{1.7}$Se$_{1.3}$, the presence of disorder induced electron-electron interactions can give rise to an additional zero-bias resistance peak. For the stoichiometric BiSbTeSe$_2$ with less disorder, tunnel barriers were employed in order to enhance the signal from the interface. The general observations in the spectra of a large variety of samples are conductance dips at the induced gap voltage, combined with an increased sub-gap conductance, consistent with p-wave predictions. The induced gap voltage is typically smaller than the gap of the Nb superconducting electrode, especially in the presence of an intentional tunnel barrier. Additional uncovered spectroscopic features are oscillations that are linearly spaced in energy, as well as a possible second order parameter component.
Proximity-induced superconductivity in a 3D topological insulator represents a new avenue for observing zero-energy Majorana fermions inside vortex cores. Relatively small gaps and low transition temperatures of conventional s-wave superconductors put the hard constraints on these experiments. Significantly larger gaps and higher transition temperatures in cuprate superconductors might be an attractive alternative to considerably relax these constraints, but it is not clear whether the proximity effect would be effective in heterostructures involving cuprates and topological insulators. Here, we present angle-resolved photoemission studies of thin Bi2Se3 films grown in-situ on optimally doped Bi2Sr2CaCu2O8 substrates that show the absence of proximity-induced gaps on the surfaces of Bi2Se3 films as thin as a 1.5 quintuple layer. These results suggest that the superconducting proximity effect between a cuprate superconductor and a topological insulator is strongly suppressed, likely due to a very short coherence length along the c-axis, incompatible crystal and pairing symmetries at the interface, small size of the topological surface state Fermi surface and adverse effects of a strong spin-orbit coupling in the topological material.
We study bulk electronic states of superconducting topological insulator, which is the promising candidate for topological superconductor. Recent experiments suggest that the three-dimensional Fermi surface evolves into two-dimensional one. We show that the superconducting energy gap structure on the Fermi surface systematically changes with this evolution. It is clarified that the bulk electronic properties such as spin-lattice relaxation rate and specific heat depend on the shape of the Fermi surface and the type of the energy gap function. These results serve as a guide to determine the pairing symmetry of Cu$_x$Bi$_2$Se$_3$.
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