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Register a new userIndications of spin polarized transport in Ba$_2$FeMoO$_6$ thin films
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We have investigated the magnetic and magnetotransport properties of Ba$_2$FeMoO$_6$ thin films produced by pulsed laser deposition from optimized bulk material. The films are comprised of grains of crystalline Ba$_2$FeMoO$_6$ with a disordered grain boundary region that lowers the net saturation magnetization of the film and prevents full magnetic alignment below a Curie temperature $T_C$$sim$305 K. Magnetotransport measurements point to the Ba$_2$FeMoO$_6$ grains retaining the high spin polarization of a half-metal up to $T_C$, while the grain boundaries greatly reduce the spin polarization of the intergrain electrical current due to spin-flip scattering. Our results show that a strong spin polarization of the electronic charge carriers is present even in Ba$_2$FeMoO$_6$ films that do not show the ideal bulk magnetic character.
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We calculate expressions for the state-dependent quasiparticle lifetime, the thermal conductivity $kappa$, the shear viscosity $eta$, and discuss the spin diffusion coefficient $D$ for Fermi-liquid films in two dimensions. The expressions are valid for low temperatures and arbitrary polarization. The low-temperature expressions for the transport coefficients are essentially exact. We find that $kappa^{-1} sim T ln{T}$, and $eta^{-1} sim T^{2}$ for arbitrary polarizations $0 le {mathcal{P}} le 1$. We note that the shear viscosity requires a unique analysis. We utilize previously determined values for the density and polarization dependent Landau parameters to calculate the transition probabilities in the lowest order $ell = 0$ approximation, and thus we obtain predictions for the density, temperature and polarization dependence of the thermal conductivity, shear viscosity, and spin diffusion coefficient for thin he3 films. Results are shown for second layer he3 films on graphite, and thin he3-he4 superfluid mixtures. The density dependence is discussed in detail. For $kappa$ and $eta$ we find roughly an order of magnitude increase in magnitude from zero to full polarization. For $D$ a simialr large increase is predicted from zero polarization to the polarization where $D$ is a maximum ($sim 0.74$). We discuss the applicability of he3 thin films to the question of the existence of a universal lower bound for the ratio of the shear viscosity to the entropy density.
Since oxide materials like Sr$_2$FeMoO$_6$ are usually applied as thin films, we studied the effect of biaxial strain, resulting from the substrate, on the electronic and magnetic properties and, in particular, on the formation energy of point defects. From our first-principles calculations, we determined that the probability of forming point defects - like vacancies or substitutions - in Sr$_2$FeMoO$_6$ could be adjusted by choosing a proper substrate. For example, the amount of anti-site disorder can be reduced with compressive strain in order to obtain purer Sr$_2$FeMoO$_6$ as needed for spintronic applications, while the formation of oxygen vacancies is more likely for tensile strain, which improves the functionality of Sr$_2$FeMoO$_6$ as a basis material of solid oxide fuel cells. In addition, we were also be able to include the oxygen partial pressure in our study by using its thermodynamic connection with the chemical potential. Strontium vacancies become for example more likely than oxygen vacancies at a pressure of 1$,$bar. Hence, this degree of freedom might offer in general another potential method for defect engineering in oxides besides, e.g., experimental growth conditions like temperature or gas pressure.
Temperature dependent transport measurements on ultrathin antiferromagnetic Mn films reveal a heretofore unknown non-universal weak localization correction to the conductivity which extends to disorder strengths greater than 100 k$Omega$ per square. The inelastic scattering of electrons off of gapped antiferromagnetic spin waves gives rise to an inelastic scattering length which is short enough to place the system in the 3d regime. The extracted fitting parameters provide estimates of the energy gap ($Delta = 16$ K) and exchange energy ($bar{J} = 320$ K).
Topological semimetals have been at the forefront of experimental and theoretical attention in condensed matter physics. Among these, recently discovered Weyl semimetals have a dispersion described by a three-dimensional Dirac cone, which is at the root of exotic physics such as the chiral anomaly in magnetotransport. In a time reversal symmetric (TRS) Weyl semimetal film, the confinement gap gives the quasiparticles a mass, while TRS is preserved by having an even number of valleys with opposite masses. The film can be tuned through a topological phase transition by a gate electric field. In this work, we present a theoretical study of the quantum corrections to the conductivity of a topological semimetal thin film, which is governed by the complex interplay of the chiral band structure, mass term, and scalar and spin-orbit scattering. We study scalar and spin-orbit scattering mechanisms on the same footing, demonstrating that they have a strong qualitative and quantitative impact on the conductivity correction. We show that, due to the spin structure of the matrix Greens functions, terms linear in the extrinsic spin-orbit scattering are present in the Bloch and momentum relaxation times, whereas previous works had identified corrections starting from the second order. In the limit of small quasiparticle mass, the terms linear in the impurity spin-orbit coupling lead to a potentially observable density dependence in the weak antilocalization correction. Moreover, when the mass term is around 30 percent of the linear Dirac terms, the system is in the unitary symmetry class with zero quantum correction and switching the extrinsic spin-orbit scattering drives the system to the weak antilocalization. We discuss the crossover between the weak localization and weak antilocalization regimes in terms of the singlet and triplet Cooperon channels, tuning the spin-orbit scattering strength.
Combining the ability to prepare high-quality, intrinsic Bi$_2$Te$_3$ topological insulator thin films of low carrier density with in-situ protective capping, we demonstrate a pronounced, gate-tunable change in transport properties of Bi$_2$Te$_3$ thin films. Using a back-gate, the carrier density is tuned by a factor of $sim 7$ in Al$_2$O$_3$ capped Bi$_2$Te$_3$ sample and by a factor of $sim 2$ in Te capped Bi$_2$Te$_3$ films. We achieve full depletion of bulk carriers, which allows us to access the topological transport regime dominated by surface state conduction. When the Fermi level is placed in the bulk band gap, we observe the presence of two coherent conduction channels associated with the two decoupled surfaces. Our magnetotransport results show that the combination of capping layers and electrostatic tuning of the Fermi level provide a technological platform to investigate the topological properties of surface states in transport experiments and pave the way towards the implementation of a variety of topological quantum devices.
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