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Register a new userTwo-particle four-point correlations in dynamically disordered tight-binding networks
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Added by
Armando Perez-Leija
Publication date
2017
fields
Physics
and research's language is
English
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We use the concept of two-particle probability amplitude to derive the stochastic evolution equation for two-particle four-point correlations in tight-binding networks affected by diagonal dynamic disorder. It is predicted that in the presence of dynamic disorder, the average spatial wave function of indistinguishable particle pairs delocalizes and populates all network sites including those which are weakly coupled in the absence of disorder. Interestingly, our findings reveal that correlation elements accounting for particle indistinguishability are immune to the impact of dynamic disorder.
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Quantum walks in dynamically-disordered networks have become an invaluable tool for understanding the physics of open quantum systems. In this work, we introduce a novel approach to describe the dynamics of indistinguishable particles in noisy quantum networks. By making use of stochastic calculus, we derive a master equation for the propagation of two non-interacting correlated particles in tight-binding networks affected by off-diagonal dynamical disorder. We show that the presence of noise in the couplings of a quantum network creates a pure-dephasing-like process that destroys all coherences in the single-particle Hilbert subspace. Remarkably, we find that when two or more correlated particles propagate in the network, coherences accounting for particle indistinguishability are robust against the impact of noise, thus showing that it is possible, in principle, to find specific conditions for which many indistinguishable particles can traverse dynamically-disordered systems without losing their ability to interfere. These results shed light on the role of particle indistinguishability in the preservation of quantum coherence in dynamically-disordered quantum networks.
We consider atomistic geometry relaxation in the context of linear tight binding models for point defects. A limiting model as Fermi-temperature is sent to zero is formulated, and an exponential rate of convergence for the nuclei configuration is established. We also formulate the thermodynamic limit model at zero Fermi-temperature, extending the results of [H. Chen, J. Lu, C. Ortner. Arch. Ration. Mech. Anal., 2018]. We discuss the non-trivial relationship between taking zero temperature and thermodynamic limits in the finite Fermi-temperature models.
Experiments on hexagonal graphene-like structures using microwave measuring techniques are presented. The lowest transverse-electric resonance of coupled dielectric disks sandwiched between two metallic plates establishes a tight-binding configuration. The nearest-neighbor coupling approximation is investigated in systems with few disks. Taking advantage of the high flexibility of the disks positions, consequences of the disorder introduced in the graphene lattice on the Dirac points are investigated. Using two different types of disks, a boron-nitride-like structure (a hexagonal lattice with a two-atom basis) is implemented, showing the appearance of a band gap.
We present a one-dimensional tight-binding chain of two-level systems coupled only through common dissipative Markovian reservoirs. This quantum chain can demonstrate anomalous thermodynamic behavior contradicting Fourier law. Population dynamics of individual systems of the chain is polynomial with the order determined by the initial state of the chain. The chain can simulate classically hard problems, such as multi-dimensional random walks.
We generalize solid-state tight-binding techniques for the spectral analysis of large superconducting circuits. We find that tight-binding states can be better suited for approximating the low-energy excitations than charge-basis states, as illustrated for the interesting example of the current-mirror circuit. The use of tight binding can dramatically lower the Hilbert space dimension required for convergence to the true spectrum, and allows for the accurate simulation of larger circuits that are out of reach of charge basis diagonalization.
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