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Register a new userManipulating composition gradient in cuprate superconducting thin films
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The techniques of growing films with different parameters in single process make it possible to build up a sample library promptly. In this work, with a precisely controlled moving mask, we synthetized superconducting La2-xCexCuO4+/-{delta} combinatorial films on one SrTiO3 substrate with the doping levels from x = 0.1 to 0.19. The monotonicity in doping along the designed direction is verified by micro-region x-ray diffraction and electric transport measurements. More importantly, by means of numerical simulation, the real change of doping levels is in accordance with a linear gradient variation of doping levels in the La2-xCexCuO4+/-{delta} combinatorial films. Our results indicate that it is promising to accurately investigate materials with critical composition by combinatorial film technique.
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In this article, we studied the role of oxygen in Pr$_{2}$CuO$_{4pmdelta}$ thin films fabricated by polymer assisted deposition method. The magnetoresistance and Hall resistivity of Pr$_{2}$CuO$_{4pmdelta}$ samples were systematically investigated. It is found that with decreasing the oxygen content, the low-temperature Hall coefficient ($R_H$) and magnetoresistance change from negative to positive, similar to those with the increase of Ce-doped concentration in R$_{2-x}$Ce$_{x}$CuO$_{4}$ (R= La, Nd, Pr, Sm, Eu). In addition, $T_c$ versus $R_H$ for both Pr$_{1-x}$LaCe$_{x}$CuO$_{4}$ and Pr$_{2}$CuO$_{4pmdelta}$ samples can coincide with each other. We conclude that the doped electrons induced by the oxygen removal are responsible for the superconductivity of $T^prime$-phase parent compounds.
The study of subtle effects on transport in semiconductors requires high-quality epitaxial structures with low defect density. Using hybrid molecular beam epitaxy (MBE), SrTiO$_3$ films with low-temperature mobility exceeding 42,000 cm$^2$V$^{-1}$s$^{-1}$ at low carrier density of 3 x 10$^{17}$ cm$^{-3}$ were achieved. A sudden and sharp decrease in residual resistivity accompanied by an enhancement in the superconducting transition temperature were observed across the second Lifshitz transition (LT) where the third band becomes occupied, revealing dominant intra-band scattering. These films further revealed an anomalous behavior in the Hall carrier density as a consequence of the antiferrodistortive (AFD) transition and the temperature-dependence of the Hall scattering factor. Using hybrid MBE growth, phenomenological modeling, temperature-dependent transport measurements, and scanning superconducting quantum interference device imaging, we provide critical insights into the important role of inter- vs intra-band scattering and of AFD domain walls on normal-state and superconducting properties of SrTiO$_3$.
We present numerical and analytical studies of coupled nonlinear Maxwell and thermal diffusion equations which describe nonisothermal dendritic flux penetration in superconducting films. We show that spontaneous branching of propagating flux filaments occurs due to nonlocal magnetic flux diffusion and positive feedback between flux motion and Joule heat generation. The branching is triggered by a thermomagnetic edge instability which causes stratification of the critical state. The resulting distribution of magnetic microavalanches depends on a spatial distribution of defects. Our results are in good agreement with experiments performed on Nb films.
We report the effect of annealing on the superconductivity of MgB2 thin films as functions of the postannealing temperature in the range from 700 C to 950 C and of the postannealing time in the range from 30 min to 120 min. On annealing at 900 C for 30 min, we obtained the best-quality MgB2 films with a transition temperature of 39 K and a critical current density of ~ 10^7 A/cm^2. Using the scanning electron microscopy, we also investigated the film growth mechanism. The samples annealed at higher temperatures showed the larger grain sizes, well-aligned crystal structures with preferential orientations along the c-axis, and smooth surface morphologies. However, a longer annealing time prevented the alignment of grains and reduced the superconductivity, indicating a strong interfacial reaction between the substrate and the MgB2 film.
We report on the direct measurement of the electron-phonon relaxation time, {tau}eph, in disordered TiN films. Measured values of {tau}eph are from 5.5 ns to 88 ns in the 4.2 to 1.7 K temperature range and consistent with a T-3 temperature dependence. The electronic density of states at the Fermi level N0 is estimated from measured material parameters. The presented results confirm that thin TiN films are promising candidate-materials for ultrasensitive superconducting detectors.
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