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Register a new userUncovering the influence of common nonmetal impurities on the stability and strength of a $Sigma$5 (310) grain boundary in Cu
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Impurities are often driven to segregate to grain boundaries, which can significantly alter a materials thermal stability and mechanical behavior. To provide a comprehensive picture of this issue, the influence of a wide variety of common nonmetal impurities (H, B, C, N, O, Si, P and S) incorporated during service or materials processing are studied using first-principles simulations, with a focus on identifying changes to the energetics and mechanical strength of a Cu $Sigma$5 (310) grain boundary. Changes to the grain boundary energy are found to be closely correlated with the covalent radii of the impurities and the volumetric deformations of polyhedra at the interface. The strengthening energies of each impurity are evaluated as a function of covalent radius and electronegativity, followed by first-principles-based tensile tests on selected impurities. The strengthening of a B-doped grain boundary comes from an enhancement of the charge density among the adjacent Cu atoms, which improves the connection between the two grains. Alternatively, the detrimental effect of O results from the reduction of charge density between the Cu atoms. This work deepens the understanding of the possible beneficial and harmful effects of impurities on grain boundaries, providing a guide for materials processing studies.
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Most research on nanocrystalline alloys has been focused on planned doping of metals with other metallic elements, but nonmetallic impurities are also prevalent in the real world. In this work, we report on the combined effects of metallic dopants and nonmetallic impurities on grain boundary energy and strength using first-principles calculations, with a $Sigma$5 (310) grain boundary in Cu chosen as a model system. We find a clear correlation between the grain boundary energy and the change in excess free volume of doped grain boundaries. A combination of a larger substitutional dopant and an interstitial impurity can fill the excess free volume more efficiently and further reduce the grain boundary energy. We also find that the strengthening effects of dopants and impurities are dominated by the electronic interactions between the host Cu atoms and the two types of dopant elements. For example, the significant competing effects of metal dopants such as Zr, Nb, and Mo with impurities on the grain boundary strength are uncovered from the density of states of the d electrons. As a whole, this work deepens the fields understanding of the interaction between metallic dopants and nonmetallic impurities on grain boundary properties, providing a guide for improving the thermal stability of materials while avoiding embrittling effects.
It was recently reported that segregation of Zr to grain boundaries (GB) in nanocrystalline Cu can lead to the formation of disordered intergranular films [1,2]. In this study we employ atomistic computer simulations to study how the formation of these films affects the dislocation nucleation from the GBs. We found that full disorder of the grain boundary structure leads to the suppression of dislocation emission and significant increase of the yield stress. Depending on the solute concentration and heat-treatment, however, a partial disorder may also occur and this aids dislocation nucleation rather than suppressing it, resulting in elimination of the strengthening effect.
While it is known that alloy components can segregate to grain boundaries (GBs), and that the atomic mobility in GBs greatly exceeds the atomic mobility in the lattice, little is known about the effect of GB segregation on GB diffusion. Atomistic computer simulations offer a means of gaining insights into the segregation-diffusion relationship by computing the GB diffusion coefficients of the alloy components as a function of their segregated amounts. In such simulations, thermodynamically equilibrium GB segregation is prepared by a semi-grand canonical Monte Carlo method, followed by calculation of the diffusion coefficients of all alloy components by molecular dynamics. As a demonstration, the proposed methodology is applied to a GB is the Cu-Ag system. The GB diffusivities obtained exhibit non-trivial composition dependencies that can be explained by site blocking, site competition, and the onset of GB disordering due to the premelting effect.
Addition of solutes is commonly used to stabilize nanocrystalline materials against grain growth. However, segregating at grain boundaries, these solutes also affect the process of dislocation nucleation from grain boundaries under applied stress. Using atomistic simulations we demonstrate that the effect of solutes on the dislocation nucleation strongly depends on the distribution of solutes at the grain boundary, which can vary dramatically depending on the solute type. In particular, our results indicate that the solutes with a smaller size mismatch can be more effective in suppressing dislocation emission from grain boundaries. Bearing in mind that dislocation slip originating from grain boundaries or their triple junctions is the dominant mechanism of plastic deformation when grain sizes are reduced to the nanoscale, we emphasize the importance of the search for the optimal solute additions, which would stabilize the nanocrystalline material against grain growth and, at the same time, effectively suppress the dislocation nucleation from the grain boundaries.
We perform a systematic first-principles study of phosphorene in the presence of typical monovalent (hydrogen, fluorine) and divalent (oxygen) impurities. The results of our modeling suggest a decomposition of phosphorene into weakly bonded one-dimensional (1D) chains upon single- and double-side hydrogenation and fluorination. In spite of a sizable quasiparticle band gap (2.29 eV), fully hydrogenated phosphorene found to be dynamically unstable. In contrast, full fluorination of phosphorene gives rise to a stable structure, being an indirect gap semiconductor with the band gap of 2.27 eV. We also show that fluorination of phosphorene from the gas phase is significantly more likely than hydrogenation due to the relatively low energy barrier for the dissociative adsorption of F2 (0.19 eV) compared to H2 (2.54 eV). At low concentrations, monovalent impurities tend to form regular atomic rows phosphorene, though such patterns do not seem to be easily achievable due to high migration barriers (1.09 and 2.81 eV for H2 and F2, respectively). Oxidation of phosphorene is shown to be a qualitatively different process. Particularly, we observe instability of phosphorene upon oxidation, leading to the formation of disordered amorphous-like structures at high concentrations of impurities.
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