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Characterization and Reduction of Capacitive Loss Induced by Sub-Micron Josephson Junction Fabrication in Superconducting Qubits

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 Added by Andrew Dunsworth
 Publication date 2017
  fields Physics
and research's language is English




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Josephson junctions form the essential non-linearity for almost all superconducting qubits. The junction is formed when two superconducting electrodes come within $sim$1 nm of each other. Although the capacitance of these electrodes is a small fraction of the total qubit capacitance, the nearby electric fields are more concentrated in dielectric surfaces and can contribute substantially to the total dissipation. We have developed a technique to experimentally investigate the effect of these electrodes on the quality of superconducting devices. We use $lambda$/4 coplanar waveguide resonators to emulate lumped qubit capacitors. We add a variable number of these electrodes to the capacitive end of these resonators and measure how the additional loss scales with number of electrodes. We then reduce this loss with fabrication techniques that limit the amount of lossy dielectrics. We then apply these techniques to the fabrication of Xmon qubits on a silicon substrate to improve their energy relaxation times by a factor of 5.



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We introduce a simplified fabrication technique for Josephson junctions and demonstrate superconducting Xmon qubits with $T_1$ relaxation times averaging above 50$~mu$s ($Q>$1.5$times$ 10$^6$). Current shadow-evaporation techniques for aluminum-based Josephson junctions require a separate lithography step to deposit a patch that makes a galvanic, superconducting connection between the junction electrodes and the circuit wiring layer. The patch connection eliminates parasitic junctions, which otherwise contribute significantly to dielectric loss. In our patch-integrated cross-type (PICT) junction technique, we use one lithography step and one vacuum cycle to evaporate both the junction electrodes and the patch. In a study of more than 3600 junctions, we show an average resistance variation of 3.7$%$ on a wafer that contains forty 0.5$times$0.5-cm$^2$ chips, with junction areas ranging between 0.01 and 0.16 $mu$m$^2$. The average on-chip spread in resistance is 2.7$%$, with 20 chips varying between 1.4 and 2$%$. For the junction sizes used for transmon qubits, we deduce a wafer-level transition-frequency variation of 1.7-2.5$%$. We show that 60-70$%$ of this variation is attributed to junction-area fluctuations, while the rest is caused by tunnel-junction inhomogeneity. Such high frequency predictability is a requirement for scaling-up the number of qubits in a quantum computer.
Non-equilibrium quasiparticles are possible sources for decoherence in superconducting qubits because they can lead to energy decay or dephasing upon tunneling across Josephson junctions. Here, we investigate the impact of the intrinsic properties of two-dimensional transmon qubits on quasiparticle tunneling (QPT) and discuss how we can use QPT to gain critical information about the Josephson junction quality and device performance. We find the tunneling rate of the non-equilibrium quasiparticles to be sensitive to the choice of the shunting capacitor material and their geometry in qubits. In some devices, we observe an anomalous temperature dependence of the QPT rate below 100 mK that deviates from a constant background associated with non-equilibrium quasiparticles. We speculate that high transmission sites within the Josephson junctions tunnel barrier can lead to this behavior, which we can model by assuming that the defect sites have a smaller effective superconducting gap than the leads of the junction. Our results present a unique characterization tool for tunnel barrier quality in Josephson junctions and shed light on how quasiparticles can interact with various elements of the qubit circuit.
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A behavior of a two qubit system coupled by the electric capacitance has been studied quantum mechanically. We found that the interaction is essentially the same as the one for the dipole-dipole interaction; i.e., qubit-qubit coupling of the NMR quantum gate. Therefore a quantum gate could be constructed by the same operation sequence for the NMR device if the coupling is small enough. The result gives an information to the effort of development of the devices assuming capacitive coupling between qubits.
We characterize a superconducting qubit before and after embedding it along with its package in an absorptive medium. We observe a drastic improvement in the effective qubit temperature and over a tenfold improvement in the relaxation time up to 5.7 $mu$s. Our results suggest the presence of external radiation inside the cryogenic apparatus can be a limiting factor for both qubit initialization and coherence. We infer from simple calculations that relaxation is not limited by thermal photons in the sample prior to embedding, but by dissipation arising from quasiparticle generation.
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