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Register a new userSymmetric-Gapped Surface States of Fractional Topological Insulators
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We construct the symmetric-gapped surface states of a fractional topological insulator with electromagnetic $theta$-angle $theta_{em} = frac{pi}{3}$ and a discrete $mathbb{Z}_3$ gauge field. They are the proper generalizations of the T-pfaffian state and pfaffian/anti-semion state and feature an extended periodicity compared with their of integer topological band insulators counterparts. We demonstrate that the surface states have the correct anomalies associated with time-reversal symmetry and charge conservation.
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A three-dimensional strong-topological-insulator or -semimetal hosts topological surface states which are often said to be gapless so long as time-reversal symmetry is preserved. This narrative can be mistaken when surface state degeneracies occur away from time-reversal-invariant momenta. The mirror-invariance of the system then becomes essential in protecting the existence of a surface Fermi surface. Here we show that such a case exists in the strong-topological-semimetal Bi$_4$Se$_3$. Angle-resolved photoemission spectroscopy and textit{ab initio} calculations reveal partial gapping of surface bands on the Bi$_2$Se$_3$-termination of Bi$_4$Se$_3$(111), where an 85 meV gap along $bar{Gamma}bar{K}$ closes to zero toward the mirror-invariant $bar{Gamma}bar{M}$ azimuth. The gap opening is attributed to an interband spin-orbit interaction that mixes states of opposite spin-helicity.
Gapless surface states on topological insulators are protected from elastic scattering on non-magnetic impurities which makes them promising candidates for low-power electronic applications. However, for wide-spread applications, these states should remain coherent and significantly spin polarized at ambient temperatures. Here, we studied the coherence and spin-structure of the topological states on the surface of a model topological insulator, Bi2Se3, at elevated temperatures in spin and angle-resolved photoemission spectroscopy. We found an extremely weak broadening and essentially no decay of spin polarization of the topological surface state up to room temperature. Our results demonstrate that the topological states on surfaces of topological insulators could serve as a basis for room temperature electronic devices.
Motivated by the recent work of QED$_3$-Chern-Simons quantum critical points of fractional Chern insulators (Phys. Rev. X textbf{8}, 031015, (2018)), we study its non-Abelian generalizations, namely QCD$_3$-Chern-Simons quantum phase transitions of fractional Chern insulators. These phase transitions are described by Dirac fermions interacting with non-Abelian Chern-Simons gauge fields ($U(N)$, $SU(N)$, $USp(N)$, etc.). Utilizing the level-rank duality of Chern-Simons gauge theory and non-Abelian parton constructions, we discuss two types of QCD$_3$ quantum phase transitions. The first type happens between two Abelian states in different Jain sequences, as opposed to the QED3 transitions between Abelian states in the same Jain sequence. A good example is the transition between $sigma^{xy}=1/3$ state and $sigma^{xy}=-1$ state, which has $N_f=2$ Dirac fermions interacting with a $U(2)$ Chern-Simons gauge field. The second type is naturally involving non-Abelian states. For the sake of experimental feasibility, we focus on transitions of Pfaffian-like states, including the Moore-Read Pfaffian, anti-Pfaffian, particle-hole Pfaffian, etc. These quantum phase transitions could be realized in experimental systems such as fractional Chern insulators in graphene heterostructures.
The surface states of 3D topological insulators can exhibit Fermi surfaces of arbitrary area when the chemical potential is tuned away from the Dirac points. We focus on topological Kondo insulators and show that the surface states can acquire a finite Fermi surface even when the chemical potential is pinned to the Dirac point energy. We illustrate how this can occur when the crystal symmetry is lowered from cubic to tetragonal in a minimal two-orbital model. We label such surface modes as `shadow surface states. We also show that for certain bulk hybridization the Fermi surface of the shadow states can become comparable to the extremal area of the unhybridized bulk bands. The `large Fermi surface of the shadow states is expected to lead to large-frequency quantum oscillations in the presence of an applied magnetic field. Consequently, shadow surface states provide an alternative to mechanisms involving bulk Landau-quantized levels or surface Kondo breakdown for anomalous magnetic quantum oscillations in topological Kondo insulators with tetragonal crystal symmetry.
In this report, we scrutinize the thickness dependent resistivity data from the recent literature on electrical transport measurements in topological insulators. A linear increase in resistivity with increase in thickness is expected in the case of these materials since they have an insulating bulk and conducting surface. However, such a trend is not seen in the resistivity versus thickness data for all the cases examined, except for some samples, where it holds for a narrow range of thickness.
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