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We investigate the plasmon dispersion relation and damping rate of collective excitations in a double-layer system consisting of bilayer graphene and GaAs quantum well, separated by a distance, at zero temperature with no interlayer tunneling. We use the random-phase-approximation dielectric function and take into account the nonhomogeneity of the dielectric background of the system. We show that the plasmon frequencies and damping rates depend considerably on interlayer correlation parameters, electron densities and dielectric constants of the contacting media.
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Vertical heterostructures combining different layered materials offer novel opportunities for applications and fundamental studies of collective behavior driven by inter-layer Coulomb coupling. Here we report heterostructures comprising a single-layer (or bilayer) graphene carrying a fluid of massless (massive) chiral carriers, and a quantum well created in GaAs 31.5 nm below the surface, supporting a high-mobility two-dimensional electron gas. These are a new class of double-layer devices composed of spatially-separated electron and hole fluids. We find that the Coulomb drag resistivity significantly increases for temperatures below 5-10 K, following a logarithmic law. This anomalous behavior is a signature of the onset of strong inter-layer correlations, compatible with the formation of a condensate of permanent excitons. The ability to induce strongly-correlated electron-hole states paves the way for the realization of coherent circuits with minimal dissipation and nanodevices including analog-to-digital converters and topologically protected quantum bits.
We consider a hybrid structure formed by graphene and an insulating antiferromagnet, separated by a dielectric of thickness up to $dsimeq 500 ,nm$. When uncoupled, both graphene and the antiferromagnetic surface host their own polariton modes coupling the electromagnetic field with plasmons in the case of graphene, and with magnons in the case of the antiferromagnet. We show that the hybrid structure can host two new types of hybrid polariton modes. First, a surface magnon-plasmon polariton whose dispersion is radically changed by the carrier density of the graphene layer, including a change of sign in the group velocity. Second, a surface plasmon-magnon polariton formed as a linear superposition of graphene surface plasmon and the antiferromagnetic bare magnon. This polariton has a dispersion with two branches, formed by the anticrossing between the dispersive surface plasmon and the magnon. We discuss the potential these new modes have for combining photons, magnons, and plasmons to reach new functionalities.
It is by now well established that high-quality graphene enables a gate-tunable low-loss plasmonic platform for the efficient confinement, enhancement, and manipulation of optical fields spanning a broad range of frequencies, from the mid infrared to the Terahertz domain. While all-electrical detection of graphene plasmons has been demonstrated, electrical plasmon injection (EPI), which is crucial to operate nanoplasmonic devices without the encumbrance of a far-field optical apparatus, remains elusive. In this work, we present a theory of EPI in double-layer graphene, where a vertical tunnel current excites acoustic and optical plasmon modes. We first calculate the power delivered by the applied inter-layer voltage bias into these collective modes. We then show that this system works also as a spectrally-resolved molecular sensor.
The honeycomb connection of carbon atoms by covalent bonds in a macroscopic two-dimensional scale leads to fascinating graphene and solar cell based on graphene/silicon Schottky diode has been widely studied. For solar cell applications, GaAs is superior to silicon as it has a direct band gap of 1.42 eV and its electron mobility is six times of that of silicon. However, graphene/GaAs solar cell has been rarely explored. Herein, we report graphene/GaAs solar cells with conversion efficiency (Eta) of 10.4% and 15.5% without and with anti-reflection layer on graphene, respectively. The Eta of 15.5% is higher than the state of art efficiency for graphene/Si system (14.5%). Furthermore, our calculation points out Eta of 25.8% can be reached by reasonably optimizing the open circuit voltage, junction ideality factor, resistance of graphene and metal/graphene contact. This research strongly support graphene/GaAs hetero-structure solar cell have great potential for practical applications.
Properties of graphene plasmons are greatly affected by their coupling to phonons. While such coupling has been routinely observed in both near-field and far-field graphene spectroscopy, the interplay between coupling strength and mode losses, and its exceptional point physics has not been discussed. By applying a non-Hermitian framework, we identify the transition point between strong and weak coupling as the exceptional point. Enhanced sensitivity to perturbations near the exceptional point is observed by varying the coupling strength and through gate modulation of the graphene Fermi level. Finally, we also show that the transition from strong to weak coupling is observable by changing the incident angle of radiation.
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