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Register a new userNegative electronic compressibility enables electrically-induced charge density waves in a two-dimensional electron liquid
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Added by
Alessandro Principi
Publication date
2017
fields
Physics
and research's language is
English
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We show that the negative electronic compressibility of two-dimensional electronic systems at sufficiently low density enables the generation of charge density waves through the application of a uniform force field, provided no current is allowed to flow. The wavelength of the density oscillations is controlled by the magnitude of the (negative) screening length, and their amplitude is proportional to the applied force. Both are electrically tunable.
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In a previous paper we suggested that a macroscopic force field applied across a two-dimensional electron gas channel could induce a microscopic charge density wave as soon as the proper compressibility becomes negative, which happens at densities much higher than the critical density for the Wigner crystal transition. The suggestion was based on a calculation of the ground state energy in the local density approximation. In this paper we refine our calculation of the energy by including a self-consistent gradient correction to the kinetic energy. Due to the increased energy cost of rapid density variations, we find a much lower critical density for the onset of the charge density wave. This critical density coincides with the result of a linear stability analysis of the uniform ground state in the absence of the electric field.
When the electron density of highly crystalline thin films is tuned by chemical doping or ionic liq- uid gating, interesting effects appear including unconventional superconductivity, sizeable spin-orbit coupling, competition with charge-density waves, and a debated low-temperature metallic state that seems to avoid the superconducting or insulating fate of standard two-dimensional electron systems. Some experiments also find a marked tendency to a negative electronic compressibility. We suggest that this indicates an inclination for electronic phase separation resulting in a nanoscopic inhomo- geneity. Although the mild modulation of the inhomogeneous landscape is compatible with a high electron mobility in the metallic state, this intrinsically inhomogeneous character is highlighted by the peculiar behaviour of the metal-to-superconductor transition. Modelling the system with super- conducting puddles embedded in a metallic matrix, we fit the peculiar resistance vs. temperature curves of systems like TiSe2, MoS2, and ZrNCl. In this framework also the low-temperature debated metallic state finds a natural explanation in terms of the pristine metallic background embedding non-percolating superconducting clusters. An intrinsically inhomogeneous character naturally raises the question of the formation mechanism(s). We propose a mechanism based on the interplay be- tween electrons and the charges of the gating ionic liquid.
We report non-local electrical measurements in a mesoscopic size two-dimensional (2D) electron gas in a GaAs quantum well in a hydrodynamic regime. Viscous electric flow is expected to be dominant when electron-electron collisions occur more often than the impurity or phonon scattering events. We observe a negative nonlocal resistance and attribute it to the formation of whirlpools in the electron flow. We use the different nonlocal transport geometries and compare the results with a theory demonstrating the significance of hydrodynamics in mesoscopic samples.
Novel electronic systems forming at oxide interfaces comprise a class of new materials with a wide array of potential applications. A high mobility electron system forms at the LaAlO$_3$/SrTiO$_3$ interface and, strikingly, both superconducts and displays indications of hysteretic magnetoresistance. An essential step for device applications is establishing the ability to vary the electronic conductivity of the electron system by means of a gate. We have fabricated metallic top gates above a conductive interface to vary the electron density at the interface. By monitoring capacitance and electric field penetration, we are able to tune the charge carrier density and establish that we can completely deplete the metallic interface with small voltages. Moreover, at low carrier densities, the capacitance is significantly enhanced beyond the geometric capacitance for the structure. In the same low density region, the metallic interface overscreens an external electric field. We attribute these observations to a negative compressibility of the electronic system at the interface. Similar phenomena have been observed previously in semiconducting two-dimensional electronic systems. The observed compressibility result is consistent with the interface containing a system of mobile electrons in two dimensions.
The layered transition metal dichalcogenides host a rich collection of charge density wave (CDW) phases in which both the conduction electrons and the atomic structure display translational symmetry breaking. Manipulating these complex states by purely electronic methods has been a long-sought scientific and technological goal. Here, we show how this can be achieved in 1T-TaS2 in the two-dimensional (2D) limit. We first demonstrate that the intrinsic properties of atomically-thin flakes are preserved by encapsulation with hexagonal boron nitride in inert atmosphere. We use this facile assembly method together with TEM and transport measurements to probe the nature of the 2D state and show that its conductance is dominated by discommensurations. The discommensuration structure can be precisely tuned in few-layer samples by an in-plane electric current, allowing continuous electrical control over the discommensuration-melting transition in 2D.
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