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Interactions between two C60 molecules measured by scanning probe microscopies

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 Added by Nadine Hauptmann
 Publication date 2017
  fields Physics
and research's language is English




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C60-functionalized tips are used to probe C60 molecules on Cu(111) with scanning tunneling and atomic force microscopy. Distinct and complex intramolecular contrasts are found. Maximal attractive forces are observed when for both molecules a [6,6] bond faces a hexagon of the other molecule. Density functional theory calculations including parameterized van der Waals interactions corroborate the observations.



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Semiconductor devices continue to press into the nanoscale regime, and new applications have emerged for which the quantum properties of dopant atoms act as the functional part of the device, underscoring the necessity to probe the quantum structure of small numbers of dopant atoms in semiconductors[1-3]. Although dopant properties are well-understood with respect to bulk semiconductors, new questions arise in nanosystems. For example, the quantum energy levels of dopants will be affected by the proximity of nanometer-scale electrodes. Moreover, because shallow donors and acceptors are analogous to hydrogen atoms, experiments on small numbers of dopants have the potential to be a testing ground for fundamental questions of atomic and molecular physics, such as the maximum negative ionization of a molecule with a given number of positive ions[4,5]. Electron tunneling spectroscopy through isolated dopants has been observed in transport studies[6,7]. In addition, Geim and coworkers identified resonances due to two closely spaced donors, effectively forming donor molecules[8]. Here we present capacitance spectroscopy measurements of silicon donors in a gallium-arsenide heterostructure using a scanning probe technique[9,10]. In contrast to the work of Geim et al., our data show discernible peaks attributed to successive electrons entering the molecules. Hence this work represents the first addition spectrum measurement of dopant molecules. More generally, to the best of our knowledge, this study is the first example of single-electron capacitance spectroscopy performed directly with a scanning probe tip[9].
Scanning probe microscopy is one of the most versatile windows into the nanoworld, providing imaging access to a variety of sample properties, depending on the probe employed. Tunneling probes map electronic properties of samples, magnetic and photonic probes image their magnetic and dielectric structure while sharp tips probe mechanical properties like surface topography, friction or stiffness. Most of these observables, however, are accessible only under limited circumstances. For instance, electronic properties are measurable only on conducting samples while atomic-resolution force microscopy requires careful preparation of samples in ultrahigh vacuum or liquid environments. Here we demonstrate a scanning probe imaging method that extends the range of accessible quantities to label-free imaging of chemical species operating on arbitrary samples - including insulating materials - under ambient conditions. Moreover, it provides three-dimensional depth information, thus revealing subsurface features. We achieve these results by recording nuclear magnetic resonance signals from a sample surface with a recently introduced scanning probe, a single nitrogen-vacancy center in diamond. We demonstrate NMR imaging with 10 nm resolution and achieve chemically specific contrast by separating fluorine from hydrogen rich regions. Our result opens the door to scanning probe imaging of the chemical composition and atomic structure of arbitrary samples. A method with these abilities will find widespread application in material science even on biological specimens down to the level of single macromolecules.
The discovery of graphene has put the spotlight on other layered materials including transition metal dichalcogenites (TMD) as building blocks for novel heterostructures assembled from stacked atomic layers. Molybdenum disulfide, MoS2, a semiconductor in the TMD family, with its remarkable thermal and chemical stability and high mobility, has emerged as a promising candidate for post-silicon applications such as switching, photonics, and flexible electronics. Since these rely on controlling the position of the Fermi energy (EF), it is crucial to understand its dependence on doping and gating. Here we employed scanning tunneling microscopy (STM) and spectroscopy (STS) with gating capabilities to measure the bandgap and the position of EF in MoS2, and to track its evolution with gate voltage. For bulk samples, the measured bandgap (~1.3eV) is comparable to the value obtained by photoluminescence, and the position of EF (~0.35eV) below the conduction band, is consistent with n-doping reported in this material. Using topography together with spectroscopy we traced the source of the n-doping in bulk MoS2 samples to point defects, which we attribute to S vacancies. In contrast, for thin films deposited on SiO2, we found significantly higher levels of n-doping that cannot be attributed to S vacancies. By combining gated STS with transport measurements in a field effect transistor (FET) configuration, we demonstrate that the higher levels of n-doping in thin film samples is due to charge traps at the sample-substrate interface.
Scanning tunneling spectra on single C60 molecules that are sufficiently decoupled from the substrate exhibit a characteristic fine structure, which is explained as due to the dynamic Jahn-Teller effect. Using electron-phonon couplings extracted from density functional theory we calculate the tunneling spectrum through the C60- anionic state and find excellent agreement with measured data.
84 - Alessandro Sola 2020
In this work we present the results of an experiment to locally resolve the spin Seebeck effect in a high-quality Pt/YIG sample. We achieve this by employing a locally heated scanning thermal probe to generate a highly local non-equilibrium spin current. To support our experimental results, we also present a model based on the non-equilibrium thermodynamic approach which is in a good agreement with experimental findings. To further corroborate our results, we index the locally resolved spin Seebeck effect with that of the local magnetisation texture by MFM and correlate corresponding regions. We hypothesise that this technique allows imaging of magnetisation textures within the magnon diffusion length and hence characterisation of spin caloritronic materials at the nanoscale.
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