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Register a new userLarge magnetoresistance and Fermi surface study of Sb$_2$Se$_2$Te single crystal
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Added by
Keshav Shrestha Dr.
Publication date
2017
fields
Physics
and research's language is
English
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We have studied the magnetotransport properties of a Sb$_2$Se$_2$Te single crystal. Magnetoresistance (MR) is maximum when the magnetic field is perpendicular to the sample surface and reaches to a value of 1100% at $B$=31 T with no sign of saturation. MR shows Shubnikov de Haas (SdH) oscillations above $B$=15 T. The frequency spectrum of SdH oscillations consists of three distinct peaks at $alpha$=32 T, $beta$=80 T and $gamma$=117 T indicating the presence of three Fermi surface pockets. Among these frequencies, $beta$ is the prominent peak in the frequency spectrum of SdH oscillations measured at different tilt angles of the sample with respect to the magnetic field. From the angle dependence $beta$ and Berry phase calculations, we have confirmed the trivial topology of the $beta$-pocket. The cyclotron masses of charge carriers, obtained by using the Lifshitz-Kosevich formula, are found to be $m^{*}_{beta}=0.16m_o$ and $m^{*}_{gamma}=0.63m_o$ for the $beta$ and $gamma$ bands respectively. Large MR of Sb$_2$Se$_2$Te is suitable for utilization in electronic instruments such as a computer hard disc, high field magnetic sensors, and memory devices.
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We performed x-ray magnetic circular dichroism (XMCD) measurements on heterostructures comprising topological insulators (TIs) of the (Bi,Sb)$_2$(Se,Te)$_3$ family and the magnetic insulator EuS. XMCD measurements allow us to investigate element-selective magnetic proximity effects at the very TI/EuS interface. A systematic analysis reveals that there is neither significant induced magnetism within the TI nor an enhancement of the Eu magnetic moment at such interface. The induced magnetic moments in Bi, Sb, Te, and Se sites are lower than the estimated detection limit of the XMCD measurements of $sim!10^{-3}$ $mu_mathrm{B}$/at.
The chalcogenide Bi$_2$Se$_3$ can attain the three dimensional (3D) Dirac semimetal state under the influence of strain and microstrain. Here we report the presnece of large linear magnetoresistance in such a Bi$_2$Se$_3$ crystal. The magnetoresistance has quadratic form at low fields which crossovers to linear above 4 T. The temperature dependence of magnetoresistance scales with carrier mobility and the crossover field scales with inverse of mobility. Our analysis suggest that the linear magnetoresistance in our system has a classical origin and arises from the scattering of high mobility 3D Dirac electrons from crystalline inhomogeneities. We observe that the charged selenium vacancies are strongly screened by high mobility Dirac electrons and the neutral crystalline defects are the main scattering center for transport mechanism. Our analysis suggests that both the resistivity and the magnetoresistance have their origin in scattering of charge carriers from neutral defects.
In the history of condensed matter physics, reinvestigation of a well-studied material with enhanced quality sometimes led to important scientific discoveries. A well-known example is the discovery of fractional quantum Hall effect in high quality GaAs/AlGaAs heterojunctions. Here we report the first single crystal growth and magnetoresistance (MR) measurements of the silver chalcogenide $beta $-Ag$_2$Se (Naumannite), a compound has been known for the unusual, linear-field-dependent MR in its polycrystalline form for over a decade. With the quantum limit (QL) as low as 3 Tesla, a moderate field produced by a superconductor magnet available in many laboratories can easily drive the electrons in Ag$_2$Se to an unprecedented state. We observed significant negative longitudinal MR beyond the QL, which was understood as a `charge-pumping effect between the novel fermions with opposite chiralities. Characterization of the single-crystalline Ag$_2$Se and the fabrication of electric devices working above the QL, will represent a new direction for the study of these exotic electrons.
We report the observation of quantum Hall effect (QHE) in a Bi$_2$Se$_3$ single crystal having carrier concentration ($n$) $sim1.13times10^{19}$cm$^{-3}$, three dimensional Fermi surface and bulk transport characteristics. The plateaus in Hall resistivity coincide with minima of Shubnikov de Haas oscillations in resistivity. Our results demonstrate that the presence of perfect two dimensional transport is not an essential condition for QHE in Bi$_2$Se$_3$. The results of high resolution x-ray diffraction (HRXRD), energy-dispersive x-ray spectroscopy (EDX), and residual resistivity measurements show the presence of enhanced crystalline defects and microstrain. We propose that the formation of localized state at the edge of each Landau level due to resonance between the bulk and defect band of Bi$_2$Se$_3$ causes the quantum Hall effect.
Topological insulators (TIs) are bulk insulators with exotic topologically protected surface conducting modes. It has recently been pointed out that when stacked together, interactions between surface modes can induce diverse phases including the TI, Dirac semimetal, and Weyl semimetal. However, currently a full experimental understanding of the conditions under which topological modes interact is lacking. Here, working with multilayers of the TI Sb$_2$Te$_3$ and the band insulator GeTe, we provide experimental evidence of a multiple topological modes in a single Sb$_2$Te$_3$-GeTe-Sb$_2$Te$_3$ structure. Furthermore, we show that reducing the thickness of the GeTe layer induces a phase transition from a Dirac-like phase to a gapped phase. By comparing different multilayer structures we demonstrate that this transition occurs due to the hybridisation of states associated with different TI films. Our results demonstrate that the Sb$_2$Te$_3$-GeTe system offers strong potential towards manipulating topological states as well as towards controlledly inducing various topological phases.
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