Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userObservation of quantum Hall effect in a microstrained Bi$_2$Se$_3$ single crystal
144
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
We report the observation of quantum Hall effect (QHE) in a Bi$_2$Se$_3$ single crystal having carrier concentration ($n$) $sim1.13times10^{19}$cm$^{-3}$, three dimensional Fermi surface and bulk transport characteristics. The plateaus in Hall resistivity coincide with minima of Shubnikov de Haas oscillations in resistivity. Our results demonstrate that the presence of perfect two dimensional transport is not an essential condition for QHE in Bi$_2$Se$_3$. The results of high resolution x-ray diffraction (HRXRD), energy-dispersive x-ray spectroscopy (EDX), and residual resistivity measurements show the presence of enhanced crystalline defects and microstrain. We propose that the formation of localized state at the edge of each Landau level due to resonance between the bulk and defect band of Bi$_2$Se$_3$ causes the quantum Hall effect.
rate research
Read More
The protected electron states at the boundaries or on the surfaces of topological insulators (TIs) have been the subject of intense theoretical and experimental investigations. Such states are enforced by very strong spin-orbit interaction in solids composed of heavy elements. Here, we study the composite particles -- chiral excitons -- formed by the Coulomb attraction between electrons and holes residing on the surface of an archetypical three-dimensional topological insulator (TI), Bi$_2$Se$_3$. Photoluminescence (PL) emission arising due to recombination of excitons in conventional semiconductors is usually unpolarized because of scattering by phonons and other degrees of freedom during exciton thermalization. On the contrary, we observe almost perfectly polarization-preserving PL emission from chiral excitons. We demonstrate that the chiral excitons can be optically oriented with circularly polarized light in a broad range of excitation energies, even when the latter deviate from the (apparent) optical band gap by hundreds of meVs, and that the orientation remains preserved even at room temperature. Based on the dependences of the PL spectra on the energy and polarization of incident photons, we propose that chiral excitons are made from massive holes and massless (Dirac) electrons, both with chiral spin textures enforced by strong spin-orbit coupling. A theoretical model based on such proposal describes quantitatively the experimental observations. The optical orientation of composite particles, the chiral excitons, emerges as a general result of strong spin-orbit coupling in a 2D electron system. Our findings can potentially expand applications of TIs in photonics and optoelectronics.
Using circularly polarized light is an alternative to electronic ways for spin injection into materials. Spins are injected at a point of the light illumination, and then diffuse and spread radially due to the in-plane gradient of the spin density. This diffusion is converted into a circular charge current by the inverse spin Hall effect (ISHE). With shining the circularly polarized light at asymmetric parts of the sample, such as near edges, we detected this current as a helicity-dependent component in the photocurrent. We present a model for this ISHE based on the experimental results and the finite-element-method (FEM) simulation of the potential distribution induced by spin injection. Our model shows that the ISHE photocurrent generates an electric dipole at the edge of the sample, causing the measured charge current. The asymmetric light-illumination shown here is a simple way to inject and manipulate spins, opening up a door for novel spintronic devices.
The chalcogenide Bi$_2$Se$_3$ can attain the three dimensional (3D) Dirac semimetal state under the influence of strain and microstrain. Here we report the presnece of large linear magnetoresistance in such a Bi$_2$Se$_3$ crystal. The magnetoresistance has quadratic form at low fields which crossovers to linear above 4 T. The temperature dependence of magnetoresistance scales with carrier mobility and the crossover field scales with inverse of mobility. Our analysis suggest that the linear magnetoresistance in our system has a classical origin and arises from the scattering of high mobility 3D Dirac electrons from crystalline inhomogeneities. We observe that the charged selenium vacancies are strongly screened by high mobility Dirac electrons and the neutral crystalline defects are the main scattering center for transport mechanism. Our analysis suggests that both the resistivity and the magnetoresistance have their origin in scattering of charge carriers from neutral defects.
The influence of individual impurities of Fe on the electronic properties of topological insulator Bi$_2$Se$_3$ is studied by Scanning Tunneling Microscopy. The microscope tip is used in order to remotely charge/discharge Fe impurities. The charging process is shown to depend on the impurity location in the crystallographic unit cell, on the presence of other Fe impurities in the close vicinity, as well as on the overall doping level of the crystal. We present a qualitative explanation of the observed phenomena in terms of tip-induced local band bending. Our observations evidence that the specific impurity neighborhood and the position of the Fermi energy with respect to the Dirac point and bulk bands have both to be taken into account when considering the electron scattering on the disorder in topological insulators.
Co$_3$Sn$_2$S$_2$ is a ferromagnetic semi-metal with Weyl nodes in its band structure and a large anomalous Hall effect below its Curie temperature of 177 K. We present a detailed study of its Fermi surface and examine the relevance of the anomalous transverse Wiedemann Franz law to it. We studied Shubnikov-de Haas oscillations along two orientations in single crystals with a mobility as high as $2.7times$10$^3$ cm$^2$V$^{-1}$s$^{-1}$ subject to a magnetic field as large as $sim$ 60 T. The angle dependence of the frequencies is in agreement with density functional theory (DFT) calculations and reveals two types of hole pockets (H1, H2) and two types of electron pockets (E1, E2). An additional unexpected frequency emerges at high magnetic field. We attribute it to magnetic breakdown between the hole pocket H2 and the electron pocket E2, since it is close to the sum of the E2 and H2 fundamental frequencies. By measuring the anomalous thermal and electrical Hall conductivities, we quantified the anomalous transverse Lorenz ratio, which is close to the Sommerfeld ratio ($L_0=frac{pi^2}{3}frac{k_B^2}{e^2}$) below 100 K and deviates downwards at higher temperatures. This finite temperature deviation from the anomalous Wiedemann-Franz law is a source of information on the distance between the sources and sinks of the Berry curvature and the chemical potential.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
