No Arabic abstract
We report a study of the magnetic field dependence of photoluminescence of NV$^-$ centers (negatively charged nitrogen-vacancy centers) in diamond single crystals. In such a magnetic field dependence characteristic sharp features are observed, which are coming from Level Anti-Crossings (LACs) in a coupled electron-nuclear spin system. For sensitive detection of such LAC-lines we use lock-in detection to measure the photoluminescence intensity. This experimental technique allows us to obtain new LAC lines. Additionally, a remarkably strong dependence of the LAC-lines on the modulation frequency is found. Specifically, upon decrease of the modulation frequency from 12 kHz to 17 Hz the amplitude of the LAC-lines increases by approximately two orders of magnitude. To take a quantitative account for such effects, we present a theoretical model, which describes the spin dynamics in a coupled electron-nuclear spin system under the action of an oscillating external magnetic field. Good agreement between experiments and theory allows us to conclude that the observed effects are originating from coherent spin polarization exchange in a coupled spin system comprising the spin-polarized NV$^-$ center. Our results are of great practical importance allowing one to optimize the experimental conditions for probing LAC-derived lines in diamond crystals comprising NV$^-$ centers and for indirect detection and identification of other paramagnetic defect centers.
We report a study of the magnetic field dependence of the photo-luminescence of NV$^-$ centers (negatively charged nitrogen-vacancy centers) in diamond single crystals. In such a magnetic field dependence characteristic lines are observed, which are coming from Level Anti-Crossings (LACs) in the coupled electron-nuclear spin system. For enhancing the sensitivity, we used lock-in detection to measure the photo-luminescence intensity and observed a remarkably strong dependence of the LAC-derived lines on the modulation frequency. Upon decreasing of the modulation frequency from 12 kHz to 17 Hz the amplitude of the lines increases by approximately two orders of magnitude. To take a quantitative account for such effects, we developed a theoretical model, which describes the spin dynamics in the coupled electron-nuclear spin system under the action of an oscillating external magnetic field. Good agreement between experiments and theory allows us to conclude that the observed effects are originating from coherent spin polarization exchange in the NV$^-$ center. Our results are of great practical importance allowing one to optimize the experimental conditions for probing LAC-derived lines in diamond defect centers.
We report a magnetic field dependence of fluorescence of diamond single crystals containing NV$^-$ centers. In such spectra, numerous sharp lines are found, which correspond to Level Anti-Crossings (LACs) in coupled spins systems comprising an NV$^-$ center. Theoretical modeling of such LAC-spectra enables characterization of paramagnetic defect centers and determination of their magnetic resonance parameters, such as zero-field splitting and hyperfine coupling constants. The outlined method thus enables sensitive detection of paramagnetic impurities in diamond crystals.
Recent developments in magnetic field sensing with negatively charged nitrogen-vacancy centers (NV) in diamond employ magnetic-field (MF) dependent features in the photoluminescence (PL) and eliminate the need for microwaves (MW). Here, we study two approaches towards improving the magnetometric sensitivity using the ground-state level anti-crossing (GSLAC) feature of the NV center at a background MF of 102.4,mT. Following the first approach, we investigate the feature parameters for precise alignment in a dilute diamond sample; the second approach extends the sensing protocol into absorption via detection of the GSLAC in the diamond transmission of a 1042,nm laser beam. This leads to an increase of GSLAC contrast and results in a magnetometer with a sensitivity of 0.45,nT/$sqrt{text{Hz}}$ and a photon shot-noise limited sensitivity of 12.2 pT/$sqrt{rm{Hz}}$.
We propose an efficient method for calculating level anti-crossing spectra (LAC spectra) of interacting paramagnetic defect centers in crystals. By LAC spectra we mean the magnetic field dependence of the photoluminescence intensity of paramagnetic color centers: such field dependences often exhibit sharp features, such as peaks or dips, originating from LACs in the spin system. Our approach takes into account the electronic Zeeman interaction with the external magnetic field, dipole-dipole interaction of paramagnetic centers, hyperfine coupling of paramagnetic defects to magnetic nuclei and zero-field splitting. By using this method, we can not only obtain the positions of lines in LAC spectra, but also reproduce their shapes as well as the relative amplitudes of different lines. As a striking example, we present a calculation of LAC spectra in diamond crystals containing negatively charged NV centers.
Hybrid quantum devices, in which disparate quantum elements are combined in order to achieve enhanced functionality, have received much attention in recent years due to their exciting potential to address key problems in quantum information processing, communication, and control. Specifically, significant progress has been made in the field of hybrid mechanical devices, in which a qubit is coupled to a mechanical oscillator. Strong coupling in such devices has been demonstrated with superconducting qubits, and coupling defect qubits to mechanical elements via crystal strain has enabled novel methods of qubit measurement and control. In this paper we demonstrate the fabrication of diamond optomechanical crystals with embedded nitrogen-vacancy (NV) centers, a preliminary step toward reaching the quantum regime with defect qubit hybrid mechanical devices. We measure optical and mechanical resonances of diamond optomechanical crystals as well as the spin coherence of single embedded NV centers. We find that the spin has long coherence times $T_2^* = 1.5 mu s$ and $T_2 = 72 mu s$ despite its proximity to nanofabricated surfaces. Finally, we discuss potential improvements of these devices and prospects for future experiments in the quantum regime.