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Register a new userImpurity scattering and size quantization effects in a single graphene nanoflake
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By using Fourier-transform scanning tunneling spectroscopy we measure the interference patterns produced by the impurity scattering of confined Dirac quasiparticles in epitaxial graphene nanoflakes. Upon comparison of the experimental results with tight-binding calculations of realistic model flakes, we show that the characteristic features observed in the Fourier-transformed local density of states are related to scattering between different transverse modes (sub-bands) of a graphene nanoflake and allow direct insight into the electronic spectrum of graphene. We also observe a strong reduction of quasiparticle lifetime which is attributed to the interaction with the underlying substrate. In addition, we show that the distribution of the onsite energies at flower defects leads to an effectively broken pseudospin selection rule, where intravalley back-scattering is allowed.
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We have examined the impact of charged impurity scattering on charge carrier transport in bilayer graphene (BLG) by deposition of potassium in ultra-high vacuum at low temperature. Charged impurity scattering gives a conductivity which is supra-linear in carrier density, with a magnitude similar to single-layer graphene for the measured range of carrier densities of 2-4 x 10^12 cm^-2. Upon addition of charged impurities of concentration n_imp, the minimum conductivity Sigma_min decreases proportional to n_imp^-1/2, while the electron and hole puddle carrier density increases proportional to n_imp^1/2. These results for the intentional deposition of potassium on BLG are in good agreement with theoretical predictions for charged impurity scattering. However, our results also suggest that charged impurity scattering alone cannot explain the observed transport properties of pristine BLG on SiO2 before potassium doping.
Quantum point contacts (QPCs) are cornerstones of mesoscopic physics and central building blocks for quantum electronics. Although the Fermi wave-length in high-quality bulk graphene can be tuned up to hundreds of nanometers, the observation of quantum confinement of Dirac electrons in nanostructured graphene systems has proven surprisingly challenging. Here we show ballistic transport and quantized conductance of size-confined Dirac fermions in lithographically-defined graphene constrictions. At high charge carrier densities, the observed conductance agrees excellently with the Landauer theory of ballistic transport without any adjustable parameter. Experimental data and simulations for the evolution of the conductance with magnetic field unambiguously confirm the identification of size quantization in the constriction. Close to the charge neutrality point, bias voltage spectroscopy reveals a renormalized Fermi velocity ($v_F approx 1.5 times 10^6 m/s$) in our graphene constrictions. Moreover, at low carrier density transport measurements allow probing the density of localized states at edges, thus offering a unique handle on edge physics in graphene devices.
Both transport $tau_{tr}$ and elastic scattering times $tau_{e}$ are experimentally determined from the carrier density dependence of the magnetoconductance of monolayer and bilayer graphene. Both times and their dependences in carrier density are found to be very different in the monolayer and the bilayer. However their ratio $tau_{tr}/tau_{e} $is found to be of the order of $1.5 $ in both systems and independent of the carrier density. These measurements give insight on the nature (neutral or charged) and spatial extent of the scattering centers. Comparison with theoretical predictions yields that the main scattering mechanism in our graphene samples could be due to strong scatterers of short range, inducing resonant scattering, a likely candidate being vacancies.
We review the physics of charged impurities in the vicinity of graphene. The long-range nature of Coulomb impurities affects both the nature of the ground state density profile as well as graphenes transport properties. We discuss the screening of a single Coulomb impurity and the ensemble averaged density profile of graphene in the presence of many randomly distributed impurities. Finally, we discuss graphenes transport properties due to scattering off charged impurities both at low and high carrier density.
We theoretically calculate the impurity-scattering induced resistivity of twisted bilayer graphene at low twist angles where the graphene Fermi velocity is strongly suppressed. We consider, as a function of carrier density, twist angle, and temperature, both long-ranged Coulomb scattering and short-ranged defect scattering within a Boltzmann theory relaxation time approach. For experimentally relevant disorder, impurity scattering contributes a resistivity comparable to (much larger than) the phonon scattering contribution at high (low) temperatures. Decreasing twist angle leads to larger resistivity, and in general, the resistivity increases (decreases) with increasing temperature (carrier density). Inclusion of the van Hove singularity in the theory leads to a strong increase in the resistivity at higher densities, where the chemical potential is close to a van Hove singularity, leading to an apparent density-dependent plateau type structure in the resistivity, which has been observed in recent transport experiments. We also show that the Matthissens rule is strongly violated in twisted bilayer graphene at low twist angles.
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