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Register a new userRobust and Pristine Top ological Dirac Semimetal Phase in Pressured Two-Dimensional Black Phosphorous
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Very recently, in spite of various efforts in searching for two dimensional topological Dirac semimetals (2D TDSMs) in phosphorene, there remains a lack of experimentally efficient way to activate such phase transition and the underlying mechanism for the topological phase acquisition is still controversial. Here, from first-principles calculations in combination with a band-sorting technique based on k.p theory, a layer-pressure topological phase diagram is obtained and some of the controversies are clarified. We demonstrate that, compared with tuning by external electric-fields, strain or doping by adsorption, hydrostatic pressure can be an experimentally more feasible way to activate the topological phase transition for 2D TDSM acquisition in phosphorene. More importantly, the resultant TDSM state is a pristine phase possessing a single pair of symmetry-protected Dirac cones right at the Fermi level, in startling contrast to the pressured bulk black phosphorous where only a carrier-mixed Dirac state can be obtained. We corroborate that the Dirac points are robust under external perturbation as long as the glide-plane symmetry preserves. Our findings provide a means to realize 2D pristine TDSM in a more achievable manner, which could be crucial in the realization of controllable TDSM states in phosphorene and related 2D materials.
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Black phosphorus (BP), a layered van der Waals material, reportedly has a band gap sensitive to external perturbations and manifests a Dirac-semimetal phase when its band gap is closed. Previous studies were focused on effects of each perturbation, lacking a unified picture for the band-gap closing and the Dirac-semimetal phase. Here, using pseudospins from the glide-reflection symmetry, we study the electronic structures of mono- and bilayer BP and construct the phase diagram of the Dirac-semimetal phase in the parameter space related to pressure, strain, and electric field. We find that the Dirac-semimetal phase in BP layers is singly connected in the phase diagram, indicating the phase is topologically identical regardless of the gap-closing mechanism. Our findings can be generalized to the Dirac semimetal phase in anisotropic layered materials and can play a guiding role in search for a new class of topological materials and devices.
Proximity of two different materials leads to an intricate coupling of quasiparticles so that an unprecedented electronic state is often realized at the interface. Here, we demonstrate a resonance-type many-body ground state in graphene, a non-magnetic two-dimensional Dirac semimetal, when grown on SmB6, a Kondo insulator, via thermal decomposition of fullerene molecules. This ground state is typically observed in three-dimensional magnetic materials with correlated electrons. Above the characteristic Kondo temperature of the substrate, the electron band structure of pristine graphene remains almost intact. As temperature decreases, however, the Dirac fermions of graphene become hybridized with the Sm 4f states. Remarkable enhancement of the hybridization and Kondo resonance is observed with further cooling and increasing charge carrier density of graphene, evidencing the Kondo screening of the Sm 4f local magnetic moment by the conduction electrons of graphene at the interface. These findings manifest the realization of the Kondo effect in graphene by the proximity of SmB6 that is tuned by temperature and charge carrier density of graphene.
We calculate an electron-phonon scattering and intrinsic transport properties of black phosphorus monolayer using tight-binding and Boltzmann treatments as a function of temperature, carrier density, and electric field. The low-field mobility shows weak dependence on density and, at room temperature, falls in the range of 300 - 1000 cm^2/Vs in the armchair direction and 50 - 120 cm^2/Vs in the zig-zag direction with the anisotropy due to an effective mass difference. At high fields, drift velocity is linear with electric field up to 1 - 2 V/micron reaching values of 10^7 cm/s in the armchair direction, unless self-heating effects are included.
With the emergence of Dirac fermion physics in the field of condensed matter, magnetic quantum oscillations (MQOs) have been used to discern the topology of orbits in Dirac materials. However, many previous researchers have relied on the single-orbit Lifshiftz-Kosevich formula, which overlooks the significant effect of degenerate orbits on MQOs. Since the single-orbit LK formula is valid for massless Dirac semimetals with small cyclotron masses, it is imperative to generalize the method applicable to a wide range of Dirac semimetals, whether massless or massive. This report demonstrates how spin-degenerate orbits affect the phases in MQOs of three-dimensional massive Dirac semimetal, NbSb$_2$. With varying the direction of the magnetic field, an abrupt $pi$ phase shift is observed due to the interference between the spin-degenerate orbits. We investigate the effect of cyclotron mass on the $pi$ phase shift and verify its close relation to the phase from the Zeeman coupling. We find that the $pi$ phase shift occurs when the cyclotron mass is 1/2 of the electron mass, indicating the effective spin gyromagnetic ratio is $g_s$ = 2. Our approach is not only useful for analysing MQOs of massless Dirac semimetals with a small cyclotron mass, but also can be used for MQOs in massive Dirac materials with degenerate orbits, especially in topological materials with a sufficiently large cyclotron mass. Furthermore, this method provides a useful way to estimate the precise $g_s$ value of the material.
Three-dimensional (3D) topological Dirac semimetal, when thinned down to 2D few layers, is expected to possess gapped Dirac nodes via quantum confinement effect and concomitantly display the intriguing quantum spin Hall (QSH) insulator phase. However, the 3D-to-2D crossover and the associated topological phase transition, which is valuable for understanding the topological quantum phases, remain unexplored. Here, we synthesize high-quality Na3Bi thin films with R3*R3 reconstruction on graphene, and systematically characterize their thickness-dependent electronic and topological properties by scanning tunneling microscopy/spectroscopy in combination with first-principles calculations. We demonstrate that Dirac gaps emerge in Na3Bi films, providing spectroscopic evidences of dimensional crossover from a 3D semimetal to a 2D topological insulator. Importantly, the Dirac gaps are revealed to be of sizable magnitudes on 3 and 4 monolayers (72 and 65 meV, respectively) with topologically nontrivial edge states. Moreover, the Fermi energy of a Na3Bi film can be tuned via certain growth process, thus offering a viable way for achieving charge neutrality in transport. The feasibility of controlling Dirac gap opening and charge neutrality enables realizing intrinsic high-temperature QSH effect in Na3Bi films and achieving potential applications in topological devices.
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