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Register a new userValence state of Sm in single crystalline EuO thin films
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Samarium has two stable valence states, 2+ and 3+, which coexist in many compounds forming spatially homogeneous intermediate valence states. We study the valence state of samarium when incorporated in a single crystalline EuO thin film which crystallizes in a $fcc$-structure similar to that of the intermediate valence SmO, but with a larger lattice constant. Due to the increased lattice spacing, a stabilization of the larger Sm$^{2+}$ ion is expected. Surprisingly, the samarium incorporated in Sm$_{mathrm{x}}$Eu$_{mathrm{1-x}}$O thin films shows a predominantly trivalent character, as determined by x-ray photoelectron spectroscopy and magnetometry measurements. We infer that the O$^{2-}$ ions in the EuO lattice have enough room to move locally, so as to reduce the Sm-O distance and stabilize the Sm$^{3+}$ valence.
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The pressure-dependent relation between Eu valence and lattice structure in model compound EuO is studied with synchrotron-based x-ray spectroscopic and diffraction techniques. Contrary to expectation, a 7% volume collapse at $approx$ 45 GPa is accompanied by a reentrant Eu valence transition into a $emph{lower}$ valence state. In addition to highlighting the need for probing both structure and electronic states directly when valence information is sought in mixed-valent systems, the results also show that widely used bond-valence methods fail to quantitatively describe the complex electronic valence behavior of EuO under pressure.
We report on the evolution of the average and depth-dependent magnetic order in thin film samples of biaxially stressed and electron-doped EuTiO$_3$ for samples across a doping range $<$0.1 to 7.8 $times 10^{20}$ cm$^{-3}$. Under an applied in-plane magnetic field, the G-type antiferromagnetic ground state undergoes a continuous spin-flop phase transition into in-plane, field-polarized ferromagnetism. The critical field for ferromagnetism slightly decreases with an increasing number of free carriers, yet the field evolution of the spin-flop transition is qualitatively similar across the doping range. Unexpectedly, we observe interfacial ferromagnetism with saturated Eu$^{2+}$ moments at the substrate interface at low fields preceding ferromagnetic saturation throughout the bulk of the degenerate semiconductor film. We discuss the implications of these findings for the unusual magnetotransport properties of this compound.
We have succeeded in growing epitaxial and highly stoichiometric films of EuO on yttria-stabilized cubic zirconia (YSZ) (001). The use of the Eu-distillation process during the molecular beam epitaxy assisted growth enables the consistent achievement of stoichiometry. We have also succeeded in growing the films in a layer-by-layer fashion by fine tuning the Eu vs. oxygen deposition rates. The initial stages of growth involve the limited supply of oxygen from the YSZ substrate, but the EuO stoichiometry can still be well maintained. The films grown were sufficiently smooth so that the capping with a thin layer of aluminum was leak tight and enabled ex situ experiments free from trivalent Eu species. The findings were used to obtain recipes for better epitaxial growth of EuO on MgO (001).
The proximity effect at the interface between a topological insulator (TI) and a superconductor is predicted to give rise to chiral topological superconductivity and Majorana fermion excitations. In most TIs studied to date, however, the conducting bulk states have overwhelmed the transport properties and precluded the investigation of the interplay of the topological surface state and Cooper pairs. Here, we demonstrate the superconducting proximity effect in the surface state of SmB6 thin films which display bulk insulation at low temperatures. The Fermi velocity in the surface state deduced from the proximity effect is found to be as large as 10^5 m/s, in good agreement with the value obtained from a separate transport measurement. We show that high transparency between the TI and a superconductor is crucial for the proximity effect. The finding here opens the door to investigation of exotic quantum phenomena using all-thin-film multilayers with high-transparency interfaces.
We have succeeded in preparing high-quality Gd-doped single-crystalline EuO films. Using Eu-distillation-assisted molecular beam epitaxy and a systematic variation in the Gd and oxygen deposition rates, we have been able to observe sustained layer-by-layer epitaxial growth on yttria-stabilized cubic zirconia (001). The presence of Gd helps to stabilize the layer-by-layer growth mode. We used soft x-ray absorption spectroscopy at the Eu and Gd M4,5 edges to confirm the absence of Eu3+ contaminants and to determine the actual Gd concentration. The distillation process ensures the absence of oxygen vacancies in the films. From magnetization measurements we found the Curie temperature to increase smoothly as a function of doping from 70 K up to a maximum of 125 K. A threshold behavior was not observed for concentrations as low as 0.2%.
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