No Arabic abstract
We show that a carbon nanotube can serve as a functional electric weak link performing photo-spintronic transduction. A spin current, facilitated by strong spin-orbit interactions in the nanotube and not accompanied by a charge current, is induced in a device containing the nanotube weak link by circularly polarized microwaves. Nanomechanical tuning of the photo-spintronic transduction can be achieved due to the sensitivity of the spin-orbit interaction to geometrical deformations of the weak link.
In a one-dimensional weak-link wire the spin-orbit interaction (SOI) alone cannot generate a nonzero spin current. We show that a Zeeman field acting in the wire in conjunction with the Rashba SOI there does yield such a current, whose magnitude and direction depend on the direction of the field. When this field is not parallel to the effective field due to the SOI, both the charge and the spin currents oscillate with the length of the wire. Measuring the oscillating anisotropic magnetoresistance can thus yield information on the SOI strength. These features are tuned by applying a magnetic and/or an electric field, with possible applications to spintronics.
A simple model for the transmission of pairs of electrons through a weak electric link in the form of a nanowire made of a material with strong electron spin-orbit interaction (SOI) is presented, with emphasis on the effects of Coulomb interactions and the Pauli exclusion principle. The constraints due to the Pauli principle are shown to quench the coherent SOI-induced precession of the spins when the spatial wave packets of the two electrons overlap significantly. The quenching, which results from the projection of the pairs spin states onto spin-up and spin-down states on the link, breaks up the coherent propagation in the link into a sequence of coherent hops that add incoherently. Applying the model to the transmission of Cooper pairs between two superconductors, we find that in spite of Pauli quenching, the Josephson current oscillates with the strength of the SOI, and may even change its sign. Conditions for an experimental detection of these features are discussed.
Current induced spin-orbit magnetic fields (iSOFs), arising either in single-crystalline ferromagnets with broken inversion symmetry1,2 or in non-magnetic metal/ferromagnetic metal bilayers3,4, can produce spin-orbit torques which act on a ferromagnets magnetization,thus offering an efficient way for its manipulation.To further reduce power consumption in spin-orbit torque devices, it is highly desirable to control iSOFs by the field-effect, where power consumption is determined by charging/discharging a capacitor5,6. In particular, efficient electric-field control of iSOFs acting on ferromagnetic metals is of vital importance for practical applications. It is known that in single crystalline Fe/GaAs (001) heterostructures with C2v symmetry, interfacial SOFs emerge at the Fe/GaAs (001) interface due to the lack of inversion symmetry7,8. Here, we show that by applying a gate-voltage across the Fe/GaAs interface, interfacial SOFs acting on Fe can be robustly modulated via the change of the magnitude of the interfacial spin-orbit interaction. Our results show that, for the first time, the electric-field in a Schottky barrier is capable of modifying SOFs, which can be exploited for the development of low-power-consumption spin-orbit torque devices.
The spin-orbit coupling (SOC) can mediate electric-dipole spin resonance (EDSR) in an a.c. electric field. In this letter, the EDSR is essentially understood as an spin precession under an effective a.c. magnetic field induced by the SOC in the reference frame, which is exactly following the classical trajectory of the electron and obtained by applying a quantum linear coordinate transformation. With this observation for one-dimensional (1D) case, we find a upper limit for the spin-flipping speed in the EDSR-based control of spin, which is given by the accessible data from the current experiment. For two-dimensional case, the azimuthal dependence of the effective magnetic field can be used to measure the ratio of the Rashba and Dresselhause SOC strengths.
Our world is composed of various materials with different structures, where spin structures have been playing a pivotal role in spintronic devices of the contemporary information technology. Apart from conventional collinear spin materials such as collinear ferromagnets and collinear antiferromagnetically coupled materials, noncollinear spintronic materials have emerged as hot spots of research attention owing to exotic physical phenomena. In this Review, we firstly introduce two types noncollinear spin structures, i.e., the chiral spin structure that yields real-space Berry phases and the coplanar noncollinear spin structure that could generate momentum-space Berry phases, and then move to relevant novel physical phenomena including topological Hall effect, anomalous Hall effect, multiferroic, Weyl fermions, spin-polarized current, and spin Hall effect without spin-orbit coupling in these noncollinear spin systems. Afterwards, we summarize and elaborate the electric-field control of the noncollinear spin structure and related physical effects, which could enable ultralow power spintronic devices in future. In the final outlook part, we emphasize the importance and possible routes for experimentally detecting the intriguing theoretically predicted spin-polarized current, verifying the spin Hall effect in the absence of spin-orbit coupling and exploring the anisotropic magnetoresistance and domain-wall-related magnetoresistance effects for noncollinear antiferromagnetic materials.