No Arabic abstract
We present a theoretical study of the charging effects in single and double layer black phosphorus quantum dots (BPQDs) with lateral sizes of 2 nm and 3 nm. We demonstrate that the charging of BPQDs are able to store up to an $N_{max}$ electron (that depends on the lateral size and number of layers in the QD), after which structural instabilities arises. For example, 3 nm wide hydrogen-passivated single layer BPQDs can hold a maximum of 16 electrons, and an additional electron causes the expelling of hydrogen atoms from the QD borders. We also calculated the additional energy ($E_A$) spectrum. For single layer QDs with 2 and 3 nm of lateral sizes, the average $E_A$ is around 0.4 eV and 0.3 eV, respectively. For double layer QDs with the same sizes, the average $E_A$ is around 0.25 eV and 0.2 eV, respectively.
We investigate single-electron transport through quantum dots with negative charging energy induced by a polaronic energy shift. For weak dot-lead tunnel couplings, we demonstrate a bipolaronic blockade effect at low biases which suppresses the oscillating linear conductance, while the conductance resonances under large biases are enhanced. Novel conductance plateau develops when the coupling asymmetry is introduced, with its height and width tuned by the coupling strength and external magnetic field. It is further shown that the amplitude ratio of magnetic-split conductance peaks changes from 3 to 1for increasing coupling asymmetry. Though we demonstrate all these transport phenomena in the low-order single-electron tunneling regime, they are already strikingly different from the usual Coulomb blockade physics and are easy to observe experimentally.
In a two-dimensional parabolic quantum dot charged with $N$ electrons, Thomas-Fermi theory states that the ground-state energy satisfies the following non-trivial relation: $E_{gs}/(hbaromega)approx N^{3/2} f_{gs}(N^{1/4}beta)$, where the coupling constant, $beta$, is the ratio between Coulomb and oscillator ($hbaromega$) characteristic energies, and $f_{gs}$ is a universal function. We perform extensive Configuration Interaction calculations in order to verify that the exact energies of relatively large quantum dots approximately satisfy the above relation. In addition, we show that the number of energy levels for intraband and interband (excitonic and biexcitonic) excitations of the dot follows a simple exponential dependence on the excitation energy, whose exponent, $1/Theta$, satisfies also an approximate scaling relation {it a la} Thomas-Fermi, $Theta/(hbaromega)approx N^{-gamma} g(N^{1/4}beta)$. We provide an analytic expression for $f_{gs}$, based on two-point Pade approximants, and two-parameter fits for the $g$ functions.
Graphene p-n junctions provide an ideal platform for investigating novel behavior at the boundary between electronics and optics that arise from massless Dirac fermions, such as whispering gallery modes and Veselago lensing. Bilayer graphene also hosts Dirac fermions, but they differ from single-layer graphene charge carriers because they are massive, can be gapped by an applied perpendicular electric field, and have very different pseudospin selection rules across a p-n junction. Novel phenomena predicted for these massive Dirac fermions at p-n junctions include anti-Klein tunneling, oscillatory Zener tunneling, and electron cloaked states. Despite these predictions there has been little experimental focus on the microscopic spatial behavior of massive Dirac fermions in the presence of p-n junctions. Here we report the experimental manipulation and characterization of massive Dirac fermions within bilayer graphene quantum dots defined by circular p-n junctions through the use of scanning tunneling microscopy-based (STM) methods. Our p-n junctions are created via a flexible technique that enables realization of exposed quantum dots in bilayer graphene/hBN heterostructures. These quantum dots exhibit sharp spectroscopic resonances that disperse in energy as a function of applied gate voltage. Spatial maps of these features show prominent concentric rings with diameters that can be tuned by an electrostatic gate. This behavior is explained by single-electron charging of localized states that arise from the quantum confinement of massive Dirac fermions within our exposed bilayer graphene quantum dots.
We have observed a negative differential conductance with singular gate and source-drain bias dependences in a phosphorus-doped silicon quantum dot. Its origin is discussed within the framework of weak localization. By measuring the current-voltage characteristics at different temperatures as well as simulating the tunneling rates dependences on energy, we demonstrate that the presence of shallow energy defects together with an enhancement of localization satisfactory explain our observations. Effects observed in magnetic fields are also discussed.
We consider a quantum battery modeled as a set of N independent two-level quantum systems driven by a time dependent classical source. Different figures of merit, such as stored energy, time of charging and energy quantum fluctuations during the charging process, are characterized in a wide range of parameters, by means of numerical approach and suitable analytical approximation scheme. Particular emphasis is put on the role of different initial conditions, describing the preparation state of the quantum battery, as well as on the sensitivity to the functional form of the external time-dependent drive. It is shown that an optimal charging protocol, characterized by fast charging time and the absence of charging fluctuations, can be achieved starting from the ground state of each two-level system, while other pure preparation states are less efficient. Moreover, we argue that a periodic train of peaked rectangular pulses can lead to fast charging. This study aims at providing a useful theoretical background in view of future experimental solid-state implementations.