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Register a new userMeasurement of the spin temperature of optically cooled nuclei and GaAs hyperfine constants in GaAs/AlGaAs quantum dots
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Deep cooling of electron and nuclear spins is equivalent to achieving polarization degrees close to 100% and is a key requirement in solid state quantum information technologies. While polarization of individual nuclear spins in diamond and SiC reaches 99% and beyond, it has been limited to 60-65% for the nuclei in quantum dots. Theoretical models have attributed this limit to formation of coherent dark nuclear spin states but experimental verification is lacking, especially due to the poor accuracy of polarization degree measurements. Here we measure the nuclear polarization in GaAs/AlGaAs quantum dots with high accuracy using a new approach enabled by manipulation of the nuclear spin states with radiofrequency pulses. Polarizations up to 80% are observed - the highest reported so far for optical cooling in quantum dots. This value is still not limited by nuclear coherence effects. Instead we find that optically cooled nuclei are well described within a classical spin temperature framework. Our findings unlock a route for further progress towards quantum dot electron spin qubits where deep cooling of the mesoscopic nuclear spin ensemble is used to achieve long qubit coherence. Moreover, GaAs hyperfine material constants are measured here experimentally for the first time.
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The magnetic field dependence of the excitonic states in unstrained GaAs/AlGaAs quantum dots is investigated theoretically and experimentally. The diamagnetic shift for the ground and the excited states are studied in magnetic fields of varying orientation. In the theoretical study, calculations are performed within the single band effective mass approximation, including band nonparabolicity, the full experimental three-dimensional dot shape and the electron-hole Coulomb interaction. These calculations are compared with the experimental results for both the ground and the excited states in fields up to 50 Tesla. Good agreement is found between theory and experiment.
We report quantum dots fabricated on very shallow 2-dimensional electron gases, only 30 nm below the surface, in undoped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy. Due to the absence of dopants, an improvement of more than one order of magnitude in mobility (at 2E11 /cm^2) with respect to doped heterostructures with similar depths is observed. These undoped wafers can easily be gated with surface metallic gates patterned by e-beam lithography, as demonstrated here from single-level transport through a quantum dot showing large charging energies (up to 1.75 meV) and excited state energies (up to 0.5 meV).
We demonstrate an efficient core-shell GaAs/AlGaAs nanowire photodetector operating at room temperature. The design of this nanoscale detector is based on a type-I heterostructure combined with a metal-semiconductor-metal (MSM) radial architecture, in which built-in electric fields at the semiconductor heterointerface and at the metal/semiconductor Schottky contact promote photogenerated charge separation, enhancing photosensitivity. The spectral photoconductive response shows that the nanowire supports resonant optical modes in the near-infrared region, which lead to large photocurrent density in agreement with the predictions of electromagnetic and transport computational models. The single nanowire photodetector shows remarkable peak photoresponsivity of 0.57 A/W, comparable to large-area planar GaAs photodetectors on the market, and a high detectivity of 7.2 10^10 cmsqrt{Hz}/W at {lambda}=855 nm. This is promising for the design of a new generation of highly sensitive single nanowire photodetectors by controlling optical mode confinement, bandgap, density of states, and electrode engineering.
We study optically driven Rabi rotations of a quantum dot exciton transition between 5 and 50 K, and for pulse-areas of up to $14pi$. In a high driving field regime, the decay of the Rabi rotations is nonmonotonic, and the period decreases with pulse-area and increases with temperature. By comparing the experiments to a weak-coupling model of the exciton-phonon interaction, we demonstrate that the observed renormalization of the Rabi frequency is induced by fluctuations in the bath of longitudinal acoustic phonons, an effect that is a phonon analogy of the Lamb-shift.
The carrier spin coherence in a p-doped GaAs/(Al,Ga)As quantum well with a diluted hole gas has been studied by picosecond pump-probe Kerr rotation with an in-plane magnetic field. For resonant optical excitation of the positively charged exciton the spin precession shows two types of oscillations. Fast oscillating electron spin beats decay with the radiative lifetime of the charged exciton of 50 ps. Long lived spin coherence of the holes with dephasing times up to 650 ps. The spin dephasing time as well as the in-plane hole g factor show strong temperature dependence, underlining the importance of hole localization at cryogenic temperatures.
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