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Modulation calorimetry in diamond anvil cells II: Joule-heating design and prototypes

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 Added by Zachary Geballe
 Publication date 2017
  fields Physics
and research's language is English




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Part I shows that quantitative measurements of heat capacity are theoretically possible inside diamond anvil cells via high-frequency Joule heating (100 kHz to 10 MHz), opening up the possibility of new methods to detect and characterize transformations at high-pressure such as the glass transitions, melting, magnetic orderings, or the onset of superconductivity. Here we test the possibility outlined in Part I, using prototypes and detailed numerical models. First, a coupled electrical-thermal numerical model shows that specific heat of metals inside diamond cells can be measured directly using $sim 1$ MHz frequency, with $< 10%$ accuracy. Second, we test physical models of high-pressure experiments, i.e. diamond-cell mock-ups. Metal foils of 2 to 6 $mu$m-thickness are clamped between glass insulation inside diamond anvil cells. Fitting data from 10 Hz to $sim 30$ kHz, we infer the specific heat capacities of Fe, Pt and Ni with $pm 20$ to $30%$ accuracy. The electrical test equipment generates -80 dBc spurious harmonics which overwhelm the thermally-induced harmonics at higher frequencies, disallowing the high precision expected from numerical models. An alternative Joule-heating calorimetry experiment, on the other hand, does allow absolute measurements with $< 10%$ accuracy, despite the -80 dBc spurious harmonics: the measurement of thermal effusivity, $sqrt{rho c k}$ ($rho$, $c$ and $k$ being density, specific heat and thermal conductivity), of the insulation surrounding a thin-film heater. Using a $sim 50$ nm-thick Pt heater surrounded by glass and 10 Hz to 300 kHz frequency, we measure thermal effusivity with $pm 6%$ accuracy inside the sample chamber of a diamond anvil cell.

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We consider the electrical current through a magnetic point contact in the limit of a strong inelastic scattering of electrons. In this limit local Joule heating of the contact region plays a decisive role in determining the transport properties of the point contact. We show that if an applied constant bias voltage exceeds a critical value, the stationary state of the system is unstable, and that periodic, non-harmonic oscillations in time of both the electrical current through the contact and the local temperature in the contact region develop spontaneously. Our estimations show that the necessary experimental conditions for observing such oscillations with characteristic frequencies in the range $10^8 div 10^9$ Hz can easily be met. We also show a possibility to manipulate upon the magnetization direction of a magnetic grain coupled through a point contact to a bulk ferromagnetic by exciting the above-mentioned thermal-electric oscillations.
Pressure calibration for most diamond-anvil cell (DAC) experiments is mainly based on the ruby scale, which is key to implement this powerful tool for high-pressure study. However, the ruby scale can often hardly be used for programmably-controlled DAC devices, especially the piezoelectric-driving cells, where a continuous pressure calibration is required. In this work, we present an effective pressure gauge for DACs made of manganin metal, based on the four-probe resistivity measurements. Pressure dependence of its resistivity is well established and shows excellent linear relations in the 0 - 30 GPa pressure range with a slope of 23.4 (9) GPa for the first-cycle compression, in contrast to that of multiple-cycle compression and decompression having a nearly identical slope of 33.7 (4) GPa likely due to the strain effect. In addition, such-established manganin scale can be used for continuously monitoring the cell pressure of piezoelectric-driving DACs, and the reliability of this method is also verified by the fixed-point method with a Bi pressure standard. Realization of continuous pressure calibration for programmably-controlled DACs would offer many opportunities for study of dynamics, kinetics, and critical behaviors of pressure-induced phase transitions.
It was found that high current density needed for the current-driven domain wall motion results in the Joule heating of the sample. The sample temperature, when the current-driven domain wall motion occurred, was estimated by measuring the sample resistance during the application of a pulsed-current. The sample temperature was 750 K for the threshold current density of 6.7 x 10^11 A/m2 in a 10 nm-thick Ni81Fe19 wire with a width of 240 nm. The temperature was raised to 830 K for the current density of 7.5 x 10^11 A/m2, which is very close to the Curie temperature of bulk Ni81Fe19. When the current density exceeded 7.5 x 10^11 A/m2, an appearance of a multi-domain structure in the wire was observed by magnetic force microscopy, suggesting that the sample temperature exceeded the Curie temperature.
Important discoveries have frequently been made through the studies of matter under high pressure. The conditions of the pressure environment are important for the interpretation of the experimental results. Due to various restrictions inside the pressure cell, detailed information relevant to the pressure environment, such as the pressure distribution, can be hard to obtain experimentally. Here we present the study of pressure distributions inside the pressure medium under different experimental conditions with NV centers in diamond particles as the sensor. These studies not only show a good spatial resolution, wide temperature and pressure working ranges, compatibility of the existing pressure cell design with the new method, but also demonstrate the usefulness to measure with these sensors as the pressure distribution is sensitive to various factors. The method and the results will benefit many disciplines such as material research and phase transitions in fluid dynamics.
60 - Emi Minamitani 2021
To investigate the initial process of Joule heating in semiconductors microscopically and quantitatively, we developed a theoretical framework for the ab initio evaluation of the carrier energy relaxation in semiconductors under a high electric field using a combination of the two-temperature model and the Boltzmann equation. We employed the method for bulk silicon as a typical example. Consequently, we found a remarkable difference in the energy relaxation processes of the electron and hole carriers. The longitudinal acoustic and optical phonons at the zone boundary contribute to the energy relaxation of electron carriers, whereas they contribute negligibly to that of the hole carriers. In addition, at the band edge, the energy relaxation rate is maximized for the electron carriers, whereas it is suppressed for the hole carriers. These differences stem from the presence/absence of intervalley scattering processes and isotropic/anisotropic band structures in electrons and holes. Our results lay the foundation for controlling the thermal generation in semiconductors by material design.
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