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Register a new userMagnetic switching in granular FePt layers promoted by near-field laser enhancement
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Light-matter interaction at the nanoscale in magnetic materials is a topic of intense research in view of potential applications in next-generation high-density magnetic recording. Laser-assisted switching provides a pathway for overcoming the material constraints of high-anisotropy and high-packing density media, though much about the dynamics of the switching process remains unexplored. We use ultrafast small-angle x-ray scattering at an x-ray free-electron laser to probe the magnetic switching dynamics of FePt nanoparticles embedded in a carbon matrix following excitation by an optical femtosecond laser pulse. We observe that the combination of laser excitation and applied static magnetic field, one order of magnitude smaller than the coercive field, can overcome the magnetic anisotropy barrier between up and down magnetization, enabling magnetization switching. This magnetic switching is found to be inhomogeneous throughout the material, with some individual FePt nanoparticles neither switching nor demagnetizing. The origin of this behavior is identified as the near-field modification of the incident laser radiation around FePt nanoparticles. The fraction of not-switching nanoparticles is influenced by the heat flow between FePt and a heat-sink layer.
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Manipulation of magnetization with ultrashort laser pulses is promising for information storage device applications. The dynamic of the magnetization response depends on the energy transfer from the photons to the spins during the initial laser excitation. A material of special interest for magnetic storage is FePt nanoparticles , on which optical writing with optical angular momentum was demonstrated recently by Lambert et al., although the mechanism remained unclear. Here we investigate experimentally and theoretically the all-optical switching of FePt nanoparticles. We show that the magnetization switching is a stochastic process. We develop a complete multiscale model which allows us to optimize the number of laser shots needed to write the magnetization of high anisotropy FePt nanoparticles in our experiments. We conclude that only angular momentum induced optically by the inverse Faraday effect will provide switching with one single femtosecond laser pulse.
The magnetic reversal by spin-polarized current of a magnetic junction consisting of two ferromagnetic layers and a nonmagnetic spacer in between is considered. Initially, the free layer is magnetized antiparallel to the pinned layer by an external magnetic field. Under current flowing, a nonequilibrium spin polarization appears in the free layer. The interaction between the injected spins and the lattice leads to instability of the antiparallel orientation at the high enough current density and to switching the free layer to a state with magnetization parallel to one in the pinned layer. If the free layer thickness and the external magnetic field strength are large enough, then a nonuniform switching is favorable, so that only a part of the free layer near the injector switches. Such a switching is accompanied with appearance of a domain wall between the switched and non-switched regions. The domain wall can oscillate around the equilibrium position with some natural frequency depending on the external magnetic field.
We demonstrate ultrafast magnetization dynamics in a 5d transition metal using circularly-polarized x-ray free electron laser in the hard x-ray region. A decay time of light-induced demagnetization of L1${}_0$-FePt was determined to be $tau_textrm{Pt} = 0.6 textrm{ps}$ using time-resolved x-ray magnetic circular dichroism at the Pt L${}_3$ edge, whereas magneto-optical Kerr measurements indicated the decay time for total magnetization as $tau_textrm{total} = 0.1 textrm{ps}$. A transient magnetic state with the photo-modulated magnetic coupling between the 3d and 5d elements is firstly demonstrated.
Electrical manipulation of magnetization is essential for integration of magnetic functionalities such as magnetic memories and magnetic logic devices into electronic circuits. The current induced spin-orbit torque (SOT) in heavy metal/ferromagnet (HM/FM) bilayers via the spin Hall effect in the HM and/or the Rashba effect at the interfaces provides an efficient way to switch the magnetization. In the meantime, current induced SOT has also been used to switch the in-plane magnetization in single layers such as ferromagnetic semiconductor (Ga,Mn)As and antiferromagnetic metal CuMnAs with globally or locally broken inversion symmetry. Here we demonstrate the current induced perpendicular magnetization switching in L10 FePt single layer. The current induced spin-orbit effective fields in L10 FePt increase with the chemical ordering parameter (S). In 20 nm FePt films with high S, we observe a large charge-to-spin conversion efficiency and a switching current density as low as 7.0E6 A/cm2. We anticipate our findings may stimulate the exploration of the spin-orbit torques in bulk perpendicular magnetic anisotropic materials and the application of high-efficient perpendicular magnetization switching in single FM layer.
Current induced spin-orbit torques driven by the conventional spin Hall effect are widely used to manipulate the magnetization. This approach, however, is nondeterministic and inefficient for the switching of magnets with perpendicular magnetic anisotropy that are demanded by the high-density magnetic storage and memory devices. Here, we demonstrate that this limitation can be overcome by exploiting a magnetic spin Hall effect in noncollinear antiferromagnets, such as Mn3Sn. The magnetic group symmetry of Mn3Sn allows generation of the out-of-plane spin current carrying spin polarization induced by an in-plane charge current. This spin current drives an out-of-plane anti-damping torque providing deterministic switching of perpendicular magnetization of an adjacent Ni/Co multilayer. Compared to the conventional spin-orbit torque devices, the observed switching does not need any external magnetic field and requires much lower current density. Our results demonstrate great prospects of exploiting the magnetic spin Hall effect in noncollinear antiferromagnets for low-power spintronics.
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