Do you want to publish a course? Click here

Lithographyically defined, room temperature low threshold subwavelength red-emitting hybrid plasmonic lasers

96   0   0.0 ( 0 )
 Publication date 2016
  fields Physics
and research's language is English




Ask ChatGPT about the research

Hybrid plasmonic lasers provide deep subwavelength optical confinement, strongly enhanced light-matter interaction and together with nanoscale footprint promise new applications in optical communication, bio-sensing and photolithography. The subwavelength hybrid plasmonic lasers reported so far often use bottom up grown nanowires, nanorods and nanosquares, making it difficult to integrate these devices into industry-relevant high density plasmonic circuits. Here, we report the first experimental demonstration of AlGaInP based, red-emitting hybrid plasmonic lasers at room temperature using lithography based fabrication processes. Resonant cavities with deep subwavelength 2D and 3D mode confinement of lambda square/56 and lambda cube/199, respectively are demonstrated. A range of cavity geometries (waveguides, rings, squares and disks) show very low lasing thresholds of 0.6-1.8 mJ/cm square with wide gain bandwidth (610 nm-685 nm), which are attributed to the heterogeneous geometry of the gain material, the optimized etching technique, and the strong overlap of the gain material with the plasmonic modes. Most importantly, we establish the connection between mode confinements and enhanced absorption and stimulated emission, which play a critical role in maintaining low lasing thresholds at extremely small hybrid plasmonic cavities. Our results pave the way for the further integration of dense arrays of hybrid plasmonic lasers with optical and electronic technology platforms.



rate research

Read More

In weakly spin-orbit coupled materials, the spin-selective nature of recombination can give rise to large magnetic-field effects, for example on electro-luminescence from molecular semiconductors. While silicon has weak spin-orbit coupling, observing spin-dependent recombination through magneto-electroluminescence is challenging due to the inefficiency of emission due to silicons indirect band-gap, and to the difficulty in separating spin-dependent phenomena from classical magneto-resistance effects. Here we overcome these challenges to measure magneto-electroluminescence in silicon light-emitting diodes fabricated via gas immersion laser doping. These devices allow us to achieve efficient emission while retaining a well-defined geometry thus suppressing classical magnetoresistance effects to a few percent. We find that electroluminescence can be enhanced by up to 300% near room temperature in a seven Tesla magnetic field showing that the control of the spin degree of freedom can have a strong impact on the efficiency of silicon LEDs.
Monolayers of molybdenum and tungsten dichalcogenides are direct bandgap semiconductors, which makes them promising for opto-electronic applications. In particular, van der Waals heterostructures consisting of monolayers of MoS2 sandwiched between atomically thin hexagonal boron nitride (hBN) and graphene electrodes allows one to obtain light emitting quantum wells (LEQWs) with low-temperature external quantum efficiency (EQE) of 1%. However, the EQE of MoS2 and MoSe2-based LEQWs shows behavior common for many other materials: it decreases fast from cryogenic conditions to room temperature, undermining their practical applications. Here we compare MoSe2 and WSe2 LEQWs. We show that the EQE of WSe2 devices grows with temperature, with room temperature EQE reaching 5%, which is 250x more than the previous best performance of MoS2 and MoSe2 quantum wells in ambient conditions. We attribute such a different temperature dependences to the inverted sign of spin-orbit splitting of conduction band states in tungsten and molybdenum dichalcogenides, which makes the lowest-energy exciton in WSe2 dark.
We have studied the plasmonic properties of aperiodic arrays of identical nanoparticles (NPs) formed by two opposite and equal graded-chains (a chain where interactions change gradually). We found that these arrays concentrate the external electromagnetic fields even in the long wavelength limit. The phenomenon was understood by identifying the system with an effective cavity where plasmonics excitations are trapped between effective band edges, resulting from the change of passband with NPs position. Dependence of excitation concentration on several systems parameter was also assessed. This includes, different gradings as well as NPs couplings, damping, and resonant frequencies. In the spirit of the scaling laws in condensed matter physics, we developed a theory that allows us to rationalize all these systems parameters into universal curves. The theory is quite general and can also be used on many other situations (different arrays for example). Additionally, we also provided an analytical solution, in the tight-binding limit, for the plasmonic response of homogeneous linear chains of NPs illuminated by a plane wave. Our results can find applications on sensing, near field imaging, plasmon-enhanced photodetectors, as well as to increase solar cell efficiency.
Excitonic stimulated emission provides a promising mechanism and route to achieve low-threshold semiconductor lasers for micro-nano optoelectronic integrations. However, excitonic stimulated emission from quantum structure-free semiconductors has rarely been realised at room temperature due to the phase transition between excitonic and electron-hole plasma states. Herein, we show that through trap-state and band-edge engineering, bound exciton states can be stabilised within the hybrid lead bromide perovskite. Under modest pumping conditions, these states enable stimulated emission behaviour that exhibits a low threshold carrier density of only 1.6*1017 cm-3, as well as a high peak gain coefficient of ~1300 cm-1. This is the first time that bound exciton stimulated emission has been realised at room temperature from a quantum structure-free semiconductor. Not only does this open up new research horizons for perovskite materials, but also it has important implications for semiconductor excitonic physics and the development of next-generation optoelectronic applications.
Although nanolasers typically have low Q-factors and high lasing thresholds, they have been successfully implemented with various gain media. Intuitively, it seems that an increase in the gain coefficient would improve the characteristics of nanolasers. For a plasmonic nanolaser, in particular, a distributed-feed-back (DFB) laser, we propose a self-consistent model that takes into account both spontaneous emission and the multimode character of laser generation to show that for a given pumping strength, the gain coefficient has an optimal value at which the radiation intensity is at a maximum and the radiation linewidth is at a minimum.
comments
Fetching comments Fetching comments
Sign in to be able to follow your search criteria
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا