No Arabic abstract
We report measurements of resistance oscillations in micron-scale antidots in both the integer and fractional quantum Hall regimes. In the integer regime, we conclude that oscillations are of the Coulomb type from the scaling of magnetic field period with the number of edges bound to the antidot. Based on both gate-voltage and field periods, we find at filling factor { u} = 2 a tunneling charge of e and two charged edges. Generalizing this picture to the fractional regime, we find (again, based on field and gate-voltage periods) at { u} = 2/3 a tunneling charge of (2/3)e and a single charged edge.
Elementary quasi-particles in a two dimensional electron system can be described as exciton-polarons since electron-exciton interactions ensures dressing of excitons by Fermi-sea electron-hole pair excitations. A relevant open question is the modification of this description when the electrons occupy flat-bands and electron-electron interactions become prominent. Here, we perform cavity spectroscopy of a two dimensional electron system in the strong-coupling regime where polariton resonances carry signatures of strongly correlated quantum Hall phases. By measuring the evolution of the polariton splitting under an external magnetic field, we demonstrate the modification of electron-exciton interactions that we associate with phase space filling at integer filling factors and polaron dressing at fractional filling factors. The observed non-linear behavior shows great promise for enhancing polariton-polariton interactions.
We report localization of fractional quantum Hall (QH) quasiparticles on graphene antidots. By studying coherent tunneling through the localized QH edge modes on the antidot, we measured the QH quasiparticle charges to be approximately $pm e/3$ at fractional fillings of $ u = pm 1/3$. The Dirac spectrum in graphene allows large energy scales and robust quasiparticle localization against thermal excitation. The capability of localizing fractional quasiparticles on QH antidots brings promising opportunities for realizing anyon braiding and novel quantum electronics.
Quantum Hall (QH) edge channels appear not only along the edge of the electron gas but also along an interface between two QH regions with different filling factors. However, the fundamental transport characteristics of such interface channels are not well understood, particularly in the high-frequency regime. In this study, we investigate the interface plasmon mode along the edge of a metal gate electrode with ungated and gated QH regions in both integer and fractional QH regimes using a time-resolved measurement scheme. The observed plasmon waveform was delayed and broadened due to the influence of the charge puddles formed around the channel. The charge velocity and diffusion constant of the plasmon mode were evaluated by analyzing the waveform using a distributed circuit model. We found that the conductive puddles in the gated region induce significant dissipation in plasmon transport. For instance, a fractional interface channel with a reasonably fast velocity was obtained by preparing a fractional state in the ungated region and an integer state in the gated region, whereas a channel in the swapped configuration was quite dissipative. This reveals a high-quality interface channel that provides a clean path to transport fractional charges for studying various fractional QH phenomena.
We present an experiment where the quantum coherence in the edge states of the integer quantum Hall regime is tuned with a decoupling gate. The coherence length is determined by measuring the visibility of quantum interferences in a Mach-Zehnder interferometer as a function of temperature, in the quantum Hall regime at filling factor two. The temperature dependence of the coherence length can be varied by a factor of two. The strengthening of the phase coherence at finite temperature is shown to arise from a reduction of the coupling between co-propagating edge states. This opens the way for a strong improvement of the phase coherence of Quantum Hall systems. The decoupling gate also allows us to investigate how inter-edge state coupling influence the quantum interferences dependence on the injection bias. We find that the finite bias visibility can be decomposed into two contributions: a Gaussian envelop which is surprisingly insensitive to the coupling, and a beating component which, on the contrary, is strongly affected by the coupling.
Protected edge modes are the cornerstone of topological states of matter. The simplest example is provided by the integer quantum Hall state at Landau level filling unity, which should feature a single chiral mode carrying electronic excitations. In the presence of a smooth confining potential it was hitherto believed that this picture may only be partially modified by the appearance of additional counterpropagating integer-charge modes. Here, we demonstrate the breakdown of this paradigm: The system favors the formation of edge modes supporting fractional excitations. This accounts for previous observations, and leads to additional predictions amenable to experimental tests.