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Register a new userAll-optical band engineering of gapped Dirac materials
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We demonstrate theoretically that the interaction of electrons in gapped Dirac materials (gapped graphene and transition-metal dichalchogenide monolayers) with a strong off-resonant electromagnetic field (dressing field) substantially renormalizes the band gaps and the spin-orbit splitting. Moreover, the renormalized electronic parameters drastically depend on the field polarization. Namely, a linearly polarized dressing field always decreases the band gap (and, particularly, can turn the gap into zero), whereas a circularly polarized field breaks the equivalence of valleys in different points of the Brillouin zone and can both increase and decrease corresponding band gaps. As a consequence, the dressing field can serve as an effective tool to control spin and valley properties of the materials and be potentially exploited in optoelectronic applications.
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We present a far-infrared magneto-optical study of the gapped nodal-line semimetal ZrSiS in magnetic fields $B$ up to 7 T. The observed field-dependent features, which represent intra- (cyclotron resonance) and interband transitions, develop as $sqrt{B}$ in increasing field and can be consistently explained within a simple 2D Dirac band model with a gap of 26 meV and an averaged Fermi velocity of $3times10^{5}$ m/s. This indicates a rather narrow distribution of these parameters along the in-plane portions of the nodal line in the Brillouin zone. A field-induced feature with an energy position that does not depend on $B$ is also detected in the spectra. Possible origins of this feature are discussed.
Uncertainty relations are studied for a characterization of topological-band insulator transitions in 2D gapped Dirac materials isostructural with graphene. We show that the relative or Kullback-Leibler entropy in position and momentum spaces, and the standard variance-based uncertainty relation, give sharp signatures of topological phase transitions in these systems.
We propose an ultrafast all-optical anomalous Hall effect in two-dimensional (2D) semiconductors of hexagonal symmetry such as gapped graphene (GG), transition metal dichalcogenides (TMDCs), and hexagonal boron nitride (h-BN). To induce such an effect, the material is subjected to a sequence of two strong-field single-optical-cycle pulses: a chiral pump pulse followed within a few femtoseconds by a probe pulse linearly polarized in the armchair direction of the 2D lattice. Due to the effect of topological resonance, the first (pump) pulse induces a large chirality (valley polarization) in the system, while the second pulse generates a femtosecond pulse of the anomalous Hall current. The proposed effect is the fundamentally the fastest all-optical anomalous Hall effect possible in nature. It can be applied to ultrafast all-optical storage and processing of information, both classical and quantum.
We analyze the valley selection rules for optical transitions from impurity states to the conduction band in two-dimensional Dirac materials, taking a monolayer of MoS2 as an example. We employ the analytical model of a shallow impurity potential which localizes electrons described by a spinor wave function, and, first, find the system eigenstates taking into account the presence of two valleys in the Brillouin zone. Then, we find the spectrum of the absorbance and calculate the photon-drag electric current due to the impurity-band transitions, drawing the general conclusions regarding the valley optical selection rules for the impurity-band optical transitions in gapped Dirac materials.
We study the electromagnetic response and surface electromagnetic modes in a generic gapped Dirac material under pumping with circularly polarized light. The valley imbalance due to pumping leads to a net Berry curvature, giving rise to a finite transverse conductivity. We discuss the appearance of nonreciprocal chiral edge modes, their hybridization and waveguiding in a nanoribbon geometry, and giant polarization rotation in nanoribbon arrays.
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