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High-temperature indium flux growth was applied to prepare single crystals of GdRh$_2$Si$_2$ by a modified Bridgman method leading to mm-sized single crystals with a platelet habitus. Specific heat and susceptibility data of GdRh$_2$Si$_2$ exhibit a pronounced anomaly at $T_N = 107rm ,K$, where the AFM ordering sets in. Magnetic measurements on the single crystals were performed down to $T = 2$,K in external fields from B = 0 - 9,T applied along the $[100]$-, $[110]$- and $[001]$-direction of the tetragonal lattice. The effective magnetic moment determined from a Curie-Weiss fit agrees well with values from literature, and is larger than the theoretically predicted value. Electrical transport data recorded for current flow parallel and perpendicular to the $[001]$-direction show a large anisotropy below $T_N$. The residual resistivity ratio $rm RRR=rho_{300K}/rho_{0}sim 23$ demonstrates that we succeeded in preparing high-quality crystals using high-temperature indium flux-growth.
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The anisotropy of magnetic properties commonly is introduced in textbooks using the case of an antiferromagnetic system with Ising type anisotropy. This model presents huge anisotropic magnetization and a pronounced metamagnetic transition and is well-known and well-documented both, in experiments and theory. In contrast, the case of an antiferromagnetic $X$-$Y$ system with weak in-plane anisotropy is only poorly documented. We studied the anisotropic magnetization of the compound GdRh$_2$Si$_2$ and found that it is a perfect model system for such a weak-anisotropy setting because the Gd$^{3+}$ ions in GdRh$_2$Si$_2$ have a pure spin moment of S=7/2 which orders in a simple AFM structure with ${bf Q} = (001)$. We observed experimentally in $M(B)$ a continuous spin-flop transition and domain effects for field applied along the $[100]$- and the $[110]$-direction, respectively. We applied a mean field model for the free energy to describe our data and combine it with an Ising chain model to account for domain effects. Our calculations reproduce the experimental data very well. In addition, we performed magnetic X-ray scattering and X-ray magnetic circular dichroism measurements, which confirm the AFM propagation vector to be ${bf Q} = (001)$ and indicate the absence of polarization on the rhodium atoms.
The bulk single crystals of $S = 1$ chain compound Ni(C$_3$H$_{10}$N$_2$)$_2$NO$_2$ClO$_4$ are grown by using a slow evaporation method at a constant temperature and a slow cooling method. It is found that the optimum condition of growing large crystals is via slow evaporation at 25 $^circ$C using 0.015 mol Ni(ClO$_4$)$_2$$cdot$6H$_2$O, 0.015 mol NaNO$_2$, and 0.03 mol 1,3-propanediamine liquid dissolved into 30 ml aqueous solvent. High-quality crystals with size up to $18 times 7.5 times 5$ mm$^3$ are obtained. The single crystals are characterized by measurements of x-ray diffraction, magnetic susceptibility, specific heat and thermal conductivity. The susceptibilities along three crystallographic axes are found to exhibit broad peaks at $sim 55$ K, and then decrease abruptly to zero at lower temperatures, which is characteristic of a Haldane chain system. The specific heat and the thermal conductivity along the $c$ axis can be attributed to the simple phononic contribution and are analyzed using the Debye approximation.
High temperature crystal structure of UPt$_2$Si$_2$ determined using single-crystal neutron diffraction at 400 K is reported. It is found that the crystal structure remains of the primitive tetragonal CaBe$_2$Ge$_2$ type with the space group P4/$n m m. Anisotropic displacement factors of the Pt atoms at the 2a (3/4 1/4 0) and Si atoms at the 2c (1/4 1/4 z) Wyckoff sites are found to be anomalously large.
We report the single crystal growth and anisotropic magnetic properties of the tetragonal RAg$_2$Ge$_2$ (R = Pr, Nd and Sm) compounds which crystallize in the ThCr$_2$Si$_2$ type crystal structure with the space group textit{I4/mmm}. The single crystals of RAg$_2$Ge$_2$ (R = Pr, Nd and Sm) were grown by self-flux method using Ag:Ge binary alloy as flux. From the magnetic studies on single crystalline samples we have found that PrAg$_2$Ge$_2$ and NdAg$_2$Ge$_2$ order antiferromagnetically at 12 K and 2 K respectively, thus corroborating the earlier polycrystalline results. SmAg$_2$Ge$_2$ also orders antiferromagnetically at 9.2 K. The magnetic susceptibility and magnetization show a large anisotropy and the easy axis of magnetization for PrAg$_2$Ge$_2$ and NdAg$_2$Ge$_2$ is along the [100] direction where as it changes to [001] direction for SmAg$_2$Ge$_2$. Two metamagnetic transitions were observed in NdAg$_2$Ge$_2$ at $H_{rm m1}$ = 1.25 T and $H_{rm m2}$ =3.56 T for the field parallel to [100] direction where as the magnetization along [001] direction was linear indicating the hard axis of magnetization.
Single crystals of the three-dimensional frustrated magnet and spin liquid candidate compound PbCuTe$_2$O$_6$, were grown using both the Travelling Solvent Floating Zone (TSFZ) and the Top-Seeded Solution Growth (TSSG) techniques. The growth conditions were optimized by investigating the thermal properties. The quality of the crystals was checked by polarized optical microscopy, X-ray Laue and X-ray powder diffraction, and compared to the polycrystalline samples. Excellent quality crystals were obtained by the TSSG method. Magnetic measurements of these crystals revealed a small anisotropy for different crystallographic directions in comparison with the previously reported data. The heat capacity of both single crystal and powder samples reveal a transition anomaly around 1~K. Curiously the position and magnitude of the transition are strongly dependent on the crystallite size and it is almost entirely absent for the smallest crystallites. A structural transition is suggested which accompanies the reported ferroelectric transition, and a scenario whereby it becomes energetically unfavourable in small crystallites is proposed.
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