No Arabic abstract
In the present work, we study the structures and molecular geometries of $CH_{4}$, $SO_{2}$ and $O_{2}$ adsorbed on $Cr_{2}O_{3}(0001)$. Using computational calculations based on the density functional theory (DFT), we analyze the most suitable sites to carry out the adsorption of each of the molecules mentioned, and the influence of each species on the adsorption and dissociation of the others. The results allow us to understand the activation of the $Cr_{2}O_{3}(0001)$ surface, which leads to the presence of $SO_{2}$ during the oxidation of $CH_{4}$, as was experimentally verified.
The work functions of (001) and (00 -1) surfaces of {alpha}-Fe_{2}O_{3} are investigated with density functional theory and symmetry slab model. These two surfaces are found to be almost nonpolarized and their work functions are 6.10 eV and 5.49 eV respectively.
We investigated the electronic structures of the bandwidth-controlled ruthenates, Y$_{2}$Ru$_{2}$O$_{7}$, CaRuO$_{3}$, SrRuO$_{3}$, and Bi$_{2}$Ru$% _{2}$O$_{7}$, by optical conductivity analysis in a wide energy region of 5 meV $sim $ 12 eV. We could assign optical transitions from the systematic changes of the spectra and by comparison with the O 1$s$ x-ray absorption data. We estimated some physical parameters, such as the on-site Coulomb repulsion energy and the crystal-field splitting energy. These parameters show that the 4$d$ orbitals should be more extended than 3$d$ ones. These results are also discussed in terms of the Mott-Hubbard model.
Magnetization, neutron diffraction and X-ray diffraction of Zn doped MnV2O4 as a function of temperature have been measured and the critical exponents and magnetocaloric effect of this system have been estimated. It is observed, that with increase in Zn substitution the noncollinear orientation of Mn spins with the V spins decreases which effectively leads to the decrease of structural transition temperature more rapidly than Curie temperature. It has been shown that the obtained values of {beta}, {gamma} and {delta} from different methods match very well. These values do not belong to universal class and the values are in between the 3D Heisenberg model and mean field interaction model. The magnetization data follow the scaling equation and collapse into two branches indicating that the calculated critical exponents and critical temperature are unambiguous and intrinsic to the system. The observed double peaks in magneto-caloric curve of Mn0.95Zn0.05V2O4 is due to the strong distortion of VO6 octahedra.
We use a mapping of the multiband Hubbard model for $CuO_{3}$ chains in $RBa_{2}Cu_{3}0_{6+x}$ (R=Y or a rare earth) onto a $t-J$ model and the description of the charge dynamics of the latter in terms pf s spinless model, to study the electronic structure of the chains. We briefly review results for the optical conductivity and we calculate the quantum phase diagram of quarter filled chains including Coulomb repulsion up to that between next-nearest-neighbor $Cu$ atoms $V_{2}$, using the resulting effective Hamiltonian, mapped onto an XXZ chain, and the method of crossing of excitation spectra. The method gives accurate results for the boundaries of the metallic phase in this case. The inclusion of $V_{2}$ greatly enhances the region of metallic behavior of the chains.
$mathrm{beta}$-Gallium oxide ($mathrm{betambox{-}Ga_{2}O_{3}}$) is an emerging widebandgap semiconductor for potential application in power and RF electronics applications. Initial theoretical calculation on a 2-dimensional electron gas (2DEG) in $mathrm{betambox{-}(Al_{x}Ga_{1-x})_{2}O_{3}/Ga_{2}O_{3}}$ heterostructures show the promise for high speed transistors. However, the experimental results do not get close to the predicted mobility values. In this work, We perform more comprehensive calculations to study the low field 2DEG transport properties in the $mathrm{betambox{-}(Al_{x}Ga_{1-x})_{2}O_{3}/Ga_{2}O_{3}}$ heterostructure. A self-consistent Poisson-Schrodinger simulation of heterostructure is used to obtain the subband energies and wavefunctions. The electronic structure, assuming confinement in a particular direction, and the phonon dispersion is calculated based on first principle methods under DFT and DFPT framework. Phonon confinement is not considered for the sake of simplicity. The different scattering mechanisms that are included in the calculation are phonon (polar and non-polar), remote impurity, alloy and interface-roughness. We include the full dynamic screening polar optical phonon screening. We report the temperature dependent low-field electron mobility.