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Register a new userLow field transport calculations in 2-dimensional electron gas in $mathrm{betambox{-}(Al_{x}Ga_{1-x})_{2}O_{3}/Ga_{2}O_{3}}$ heterostructures
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$mathrm{beta}$-Gallium oxide ($mathrm{betambox{-}Ga_{2}O_{3}}$) is an emerging widebandgap semiconductor for potential application in power and RF electronics applications. Initial theoretical calculation on a 2-dimensional electron gas (2DEG) in $mathrm{betambox{-}(Al_{x}Ga_{1-x})_{2}O_{3}/Ga_{2}O_{3}}$ heterostructures show the promise for high speed transistors. However, the experimental results do not get close to the predicted mobility values. In this work, We perform more comprehensive calculations to study the low field 2DEG transport properties in the $mathrm{betambox{-}(Al_{x}Ga_{1-x})_{2}O_{3}/Ga_{2}O_{3}}$ heterostructure. A self-consistent Poisson-Schrodinger simulation of heterostructure is used to obtain the subband energies and wavefunctions. The electronic structure, assuming confinement in a particular direction, and the phonon dispersion is calculated based on first principle methods under DFT and DFPT framework. Phonon confinement is not considered for the sake of simplicity. The different scattering mechanisms that are included in the calculation are phonon (polar and non-polar), remote impurity, alloy and interface-roughness. We include the full dynamic screening polar optical phonon screening. We report the temperature dependent low-field electron mobility.
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The $alpha$ phase of $Ga_{2}O_{3}$ is an ultra-wideband semiconductor with potential power electronics applications. In this work, we calculate the low field electron mobility in $alpha-Ga_{2}O_{3}$ from first principles. The 10 atom unit cell contributes to 30 phonon modes and the effect of each mode is taken into account for the transport calculation. The phonon dispersion and the Raman spectrum are calculated under the density functional perturbation theory formalism and compared with experiments. The IR strength is calculated from the dipole moment at the $Gamma$ point of the Brillouin zone. The electron-phonon interaction elements (EPI) on a dense reciprocal space grid is obtained using the Wannier interpolation technique. The polar nature of the material is accounted for by interpolating the non-polar and polar EPI elements independently as the localized nature of the Wannier functions are not suitable for interpolating the long-range polar interaction elements. For polar interaction the full phonon dispersion is taken into account. The electron mobility is then calculated including the polar, non-polar and ionized impurity scattering.
Wide and ultra-wide band gap semiconductors can provide excellent performance due to their high energy band gap, which leads to breakdown electric fields that are more than an order of magnitude higher than conventional silicon electronics. In materials where p-type doping is not available, achieving this high breakdown field in a vertical diode or transistor is very challenging. We propose and demonstrate the use of dielectric heterojunctions that use extreme permittivity materials to achieve high breakdown field in a unipolar device. We demonstrate the integration of a high permittivity material BaTiO3 with n-type $beta$-Ga2O3 to enable 5.7 MV/cm average electric field and 7 MV/cm peak electric field at the device edge, while maintaining forward conduction with relatively low on-resistance and voltage loss. The proposed dielectric heterojunction could enable new design strategies to achieve theoretical device performance limits in wide and ultra-wide band gap semiconductors where bipolar doping is challenging.
We use a mapping of the multiband Hubbard model for $CuO_{3}$ chains in $RBa_{2}Cu_{3}0_{6+x}$ (R=Y or a rare earth) onto a $t-J$ model and the description of the charge dynamics of the latter in terms pf s spinless model, to study the electronic structure of the chains. We briefly review results for the optical conductivity and we calculate the quantum phase diagram of quarter filled chains including Coulomb repulsion up to that between next-nearest-neighbor $Cu$ atoms $V_{2}$, using the resulting effective Hamiltonian, mapped onto an XXZ chain, and the method of crossing of excitation spectra. The method gives accurate results for the boundaries of the metallic phase in this case. The inclusion of $V_{2}$ greatly enhances the region of metallic behavior of the chains.
We report on the design and demonstration of ${beta}-(Al_{0.18}Ga_{0.82})_2O_3/Ga_2O_3$ modulation doped heterostructures to achieve high sheet charge density. The use of a thin spacer layer between the Si delta-doping and heterojunction interface was investigated in ${beta}-(Al_{0.18}Ga_{0.82})_2O_3/Ga_2O_3$ modulation doped structures. We find that that this strategy enables higher 2DEG sheet charge density up to 6.1x10^12 cm^2 with mobility of 147 cm^2/Vs. The presence of a degenerate 2DEG channel was confirmed by the measurement of low temperature effective mobility of 378 cm^2/V-s and a lack of carrier freeze out from low temperature capacitance voltage measurements. The electron density of 6.1x10^12 cm^2 is the highest reported sheet charge density obtained without parallel conduction channels in an $(Al_{0.18}Ga_{0.82})_2O_3/Ga_2O_3$ heterostructure system.
We report transport and magnetic relaxation measurements in the mixed state of strongly underdoped Y_{1-x}Pr_{x}Ba_{2}Cu_{3}O_{7} crystals. A transition from thermally activated flux creep to temperature independent quantum flux creep is observed in both transport and magnetic relaxation at temperatures T * 5 K. Flux transformer measurements indicate that the crossover to quantum creep is preceded by a coupling transition. Based on these observations we argue that below the coupling transition the current is confined within a very narrow layer beneath the current contacts.
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