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Register a new user3D sensors for the HL-LHC
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Added by
David V\\'azquez Furelos
Publication date
2016
fields
Physics
and research's language is
English
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In order to increase its discovery potential, the Large Hadron Collider (LHC) accelerator will be upgraded in the next decade. The high luminosity LHC (HL-LHC) period demands new sensor technologies to cope with increasing radiation fluences and particle rates. The ATLAS experiment will replace the entire inner tracking detector with a completely new silicon-only system. 3D pixel sensors are promising candidates for the innermost layers of the Pixel detector due to their excellent radiation hardness at low operation voltages and low power dissipation at moderate temperatures. Recent developments of 3D sensors for the HL-LHC are presented.
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A new generation of 3D silicon pixel detectors with a small pixel size of 50$times$50 and 25$times$100 $mu$m$^{2}$ is being developed for the HL-LHC tracker upgrades. The radiation hardness of such detectors was studied in beam tests after irradiation to HL-LHC fluences up to $1.4times10^{16}$ n$_{mathrm{eq}}$/cm$^2$. At this fluence, an operation voltage of only 100 V is needed to achieve 97% hit efficiency, with a power dissipation of 13 mW/cm$^2$ at -25$^{circ}$C, considerably lower than for previous 3D sensor generations and planar sensors.
Silicon pixel modules employing n-in-p planar sensors with an active thickness of 200 $mu$m, produced at CiS, and 100-200 $mu$m thin active/slim edge sensor devices, produced at VTT in Finland have been interconnected to ATLAS FE-I3 and FE-I4 read-out chips. The thin sensors are designed for high energy physics collider experiments to ensure radiation hardness at high fluences. Moreover, the active edge technology of the VTT production maximizes the sensitive region of the assembly, allowing for a reduced overlap of the modules in the pixel layer close to the beam pipe. The CiS production includes also four chip sensors according to the module geometry planned for the outer layers of the upgraded ATLAS pixel detector to be operated at the HL-LHC. The modules have been characterized using radioactive sources in the laboratory and with high precision measurements at beam tests to investigate the hit efficiency and charge collection properties at different bias voltages and particle incidence angles. The performance of the different sensor thicknesses and edge designs are compared before and after irradiation up to a fluence of $1.4times10^{16}n_{eq}/cm^{2}$.
The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 $mu$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 cdot 10^{15}$ neq/cm$^2$. Pulsed red laser light with a wavelength of 672 nm is used to generate electron-hole pairs in the sensors. The induced signals are used to determine the charge collection efficiencies separately for electrons and holes drifting through the sensor. The effective trapping rates are extracted by comparing the results to simulation. The electric field is simulated using Synopsys device simulation assuming two effective defects. The generation and drift of charge carriers are simulated in an independent simulation based on PixelAV. The effective trapping rates are determined from the measured charge collection efficiencies and the simulated and measured time-resolved current pulses are compared. The effective trapping rates determined for both electrons and holes are about 50% smaller than those obtained using standard extrapolations of studies at low fluences and suggests an improved tracker performance over initial expectations.
The R&D activity presented is focused on the development of new modules for the upgrade of the ATLAS pixel system at the High Luminosity LHC (HL-LHC). The performance after irradiation of n-in-p pixel sensors of different active thicknesses is studied, together with an investigation of a novel interconnection technique offered by the Fraunhofer Institute EMFT in Munich, the Solid-Liquid-InterDiffusion (SLID), which is an alternative to the standard solder bump-bonding. The pixel modules are based on thin n-in-p sensors, with an active thickness of 75 um or 150 um, produced at the MPI Semiconductor Laboratory (MPI HLL) and on 100 um thick sensors with active edges, fabricated at VTT, Finland. Hit efficiencies are derived from beam test data for thin devices irradiated up to a fluence of 4e15 neq/cm^2. For the active edge devices, the charge collection properties of the edge pixels before irradiation is discussed in detail, with respect to the inner ones, using measurements with radioactive sources. Beyond the active edge sensors, an additional ingredient needed to design four side buttable modules is the possibility of moving the wire bonding area from the chip surface facing the sensor to the backside, avoiding the implementation of the cantilever extruding beyond the sensor area. The feasibility of this process is under investigation with the FE-I3 SLID modules, where Inter Chip Vias are etched, employing an EMFT technology, with a cross section of 3 um x 10 um, at the positions of the original wire bonding pads.
Micromegas technology is a promising candidate to replace Atlas forward muon chambers -tracking and trigger- for future HL-LHC upgrade of the experiment. The increase on background and pile-up event probability requires detector performances which are currently under studies in intensive RD activities. We studied performances of four different resistive Micromegas detectors with different read-out strip pitches. These chambers were tested using sim120 GeV momentum pions, at H6 CERN-SPS beam line in autumn 2010. For a strip pitch 500 micrometers we measure a resolution of sim90 micrometers and a efficiency of ~98%. The track angle effect on the efficiency was also studied. Our results show that resistive techniques induce no degradation on the efficiency or resolution, with respect to the standard Micromegas. In some configuration the resistive coating is able to reduce the discharge currents at least by a factor of 100.Micromegas technology is a promising candidate to replace Atlas forward muon chambers -tracking and trigger- for future HL-LHC upgrade of the experiment. The increase on background and pile-up event probability requires detector performances which are currently under studies in intensive RD activities. We studied performances of four different resistive Micromegas detectors with different read-out strip pitches. These chambers were tested using sim120 GeV momentum pions, at H6 CERN-SPS beam line in autumn 2010. For a strip pitch 500 micrometers we measure a resolution of sim90 micrometers and a efficiency of sim98%. The track angle effect on the efficiency was also studied. Our results show that resistive techniques induce no degradation on the efficiency or resolution, with respect to the standard Micromegas. In some configuration the resistive coating is able to reduce the discharge currents at least by a factor of 100.
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