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Register a new userA large enhancement of carrier mobility in phosphorene by introducing hexagonal boron nitride substrate
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Carrier mobility is a crucial character for electronic devices since it domains power dissipation and switching speed. Materials with certain high carrier mobility, equally, unveil rich unusual physical phenomena elusive in their conventional counterparts. As a consequence, the methods to enhance the carrier mobility of materials receive immense research interests due to their potential applications in more effective electronic devices and enrichment of more unusual phenomena. For instance, introducing a flat hexagonal boron nitride (h-BN) substrate to enhance the carrier mobility has been achieved experimentally. However, the underlying mechanics is not well understood. In this study, we estimate the carrier mobility of phosphorene on h-BN substrate (P/h-BN) within the framework of the phonon-limited scattering model at first-principles level. %Our results are generic. Besides high-$kappa$ dielectric property, h-BN also possesses excellent mechanical property of a high two-dimensional elastic modulus. The P/h-BN heterostructure inherits the high elastic modulus of h-BN, leading to an enhanced carrier mobility in phosphorene. Owing to the weak van der Waals interactions between the layers, the unique electronic properties of phosphorene are almost perfectly preserved near the Fermi level, guaranteeing the superior electronic transport in P/h-BN. Our findings offer a new perspective to improve the carrier mobility in phosphorene as well as other 2D materials based field effect transistors.
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Hexagonal boron nitride (hBN) is a wide bandgap van der Waals material that has recently emerged as promising platform for quantum photonics experiments. In this work we study the formation and localization of narrowband quantum emitters in large flakes (up to tens of microns wide) of hBN. The emitters can be activated in as-grown hBN by electron irradiation or high temperature annealing, and the emitter formation probability can be increased by ion implantation or focused laser irradiation of the as-grown material. Interestingly, we show that the emitters are always localized at edges of the flakes, unlike most luminescent point defects in 3D materials. Our results constitute an important step on the road map of deploying hBN in nanophotonics applications.
Very recently, it was demonstrated that the carrier mobility of a molecular monolayer dioctylbenzothienobenzothiophene (C8-BTBT) on boron nitride can reach 10 cm2/Vs, the highest among the previously reported monolayer molecular field-effect transistors. Here we show that the high-quality single crystal of the C8-BTBT monolayer may be the key origin of the record-high carrier mobility. We discover that the C8-BTBT molecules prefer layer-by-layer growth on both hexagonal boron nitride and graphene. The flatness of these substrates substantially decreases the C8-BTBT nucleation density and enables repeatable growth of large-area single crystal of the C8-BTBT monolayer. Our experimental result indicates that only out-of-plane roughness greater than 0.6 nm of the substrates could induce disturbance in the crystal growth and consequently affect the charge transport. This information would be important in guiding the growth of high-quality epitaxy molecular film.
Quantum emitters in hexagonal boron nitride (hBN) are promising building blocks for the realization of integrated quantum photonic systems. However, their spectral inhomogeneity currently limits their potential applications. Here, we apply tensile strain to quantum emitters embedded in few-layer hBN films and realize both red and blue spectral shifts with tuning magnitudes up to 65 meV, a record for any two-dimensional quantum source. We demonstrate reversible tuning of the emission and related photophysical properties. We also observe rotation of the optical dipole in response to strain, suggesting the presence of a second excited state. We derive a theoretical model to describe strain-based tuning in hBN, and the rotation of the optical dipole. Our work demonstrates the immense potential for strain tuning of quantum emitters in layered materials to enable their employment in scalable quantum photonic networks.
Two-dimensional materials are characterised by a number of unique physical properties which can potentially make them useful to a wide diversity of applications. In particular, the large thermal conductivity of graphene and hexagonal boron nitride has already been acknowledged and these materials have been suggested as novel core materials for thermal management in electronics. However, it was not clear if mass produced flakes of hexagonal boron nitride would allow one to achieve an industrially-relevant value of thermal conductivity. Here we demonstrate that laminates of hexagonal boron nitride exhibit thermal conductivity of up to 20 W/mK, which is significantly larger than that currently used in thermal management. We also show that the thermal conductivity of laminates increases with the increasing volumetric mass density, which creates a way of fine-tuning its thermal properties.
Quantum emitters in layered materials are promising candidates for applications in nanophotonics. Here we present a technique based on charge transfer to graphene for measuring the charge transition levels ($rm E_t$) of fluorescent defects in a wide bandgap 2D material, and apply it to quantum emitters in hexagonal boron nitride (hBN). Our results will aid in identifying the atomic structures of quantum emitters in hBN, as well as practical applications since $rm E_t$ determines defect charge states and plays a key role in photodynamics.
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