No Arabic abstract
We study the magnetic properties of the adatom systems on a semiconductor surface Si(111):{C,Si,Sn,Pb} - ($sqrt{3} times sqrt{3}$). On the basis of all-electron density functional theory calculations we construct effective low-energy models taking into account spin-orbit coupling and electronic correlations. In the ground state the surface nanostructures are found to be insulators with the non-collinear 120$^{circ}$ Neel (for C, Si, Sn monolayer coverages) and 120$^{circ}$ row-wise (for Pb adatom) antiferromagnetic orderings. The corresponding spin Hamiltonians with anisotropic exchange interactions are derived by means of the superexchange theory and the calculated Dzyaloshinskii-Moriya interactions are revealed to be very strong and compatible with the isotropic exchange couplings in the systems with Sn and Pb adatoms. To simulate the excited magnetic states we solve the constructed spin models by means of the Monte Carlo method. At low temperatures and zero magnetic field we observe complex spin spiral patterns in Sn/Si(111) and Pb/Si(111). On this basis the formation of antiferromagnetic skyrmion lattice states in adatom $sp$ electron systems in strong magnetic fields is discussed.
We investigate the 1/3 monolayer $alpha$-Pb/Si(111) surface by scanning tunneling spectroscopy (STS) and fully relativistic first-principles calculations. We study both the high-temperature $sqrt{3}timessqrt{3}$ and low-temperature $3times 3$ reconstructions and show that, in both phases, the spin-orbit interaction leads to an energy splitting as large as $25%$ of the valence-band bandwidth. Relativistic effects, electronic correlations and Pb-substrate interaction cooperate to stabilize a correlated low-temperature paramagnetic phase with well-developed lower and upper Hubbard bands coexisting with $3times3$ periodicity. By comparing the Fourier transform of STS conductance maps at the Fermi level with calculated quasiparticle interference from non-magnetic impurities, we demonstrate the occurrence of two large hexagonal Fermi sheets with in-plane spin polarizations and opposite helicities.
Just like insulators can host topological Dirac states at their edges, superconductors can also exhibit topological phases characterized by Majorana edge states. Remarkable zero-energy states have been recently observed at the two ends of proximity induced superconducting wires, and were interpreted as localized Majorana end states in one-dimensional (1D) topological superconductor. By contrast, propagating Majorana states should exist at the 1D edges of two-dimensional (2D) topological superconductors. Here we report the direct observation of dispersive in-gap states surrounding topological superconducting domains made of a single atomic layer of Pb covering magnetic islands of Co/Si(111). We interpret the observed continuous dispersion across the superconducting gap in terms of a spatial topological transition accompanied by a chiral edge mode and residual gaped helical edge states. Our experimental approach enables the engineering and control of a large variety of novel quantum phases. This opens new horizons in the field of quantum materials and quantum electronics where the magnetization of the domains could be used as a control parameter for the manipulation of topological states.
We demonstrate the injection of pure valley-orbit currents in multi-valley semiconductors and present the theory of this effect. We studied photo-induced transport in $n$-doped (111)-oriented silicon metal-oxide-semiconductor field effect transistors at room temperature. By shining circularly polarized light on exact oriented structures with six equivalent valleys, non-zero electron fluxes within each valley are generated, which compensate each other and do not yield a net electric current. By disturbing the balance between the valley fluxes, in this work by applying linearly polarized radiation as well as by introducing a nonequivalence of the valleys by disorientation, we approve that the pure valley currents can be converted into a measurable electric current.
Atomic layers deposited on semiconductor substrates introduce a platform for the realization of the extended electronic Hubbard model, where the consideration of electronic repulsion beyond the onsite term is paramount. Recently, the onset of superconductivity at 4.7K has been reported in the hole-doped triangular lattice of tin atoms on a silicon substrate. Through renormalization group methods designed for weak and intermediate coupling, we investigate the nature of the superconducting instability in hole-doped Sn/Si(111). We find that the extended Hubbard nature of interactions is crucial to yield triplet pairing, which is f-wave (p-wave) for moderate (higher) hole doping. In light of persisting challenges to tailor triplet pairing in an electronic material, our finding promises to pave unprecedented ways for engineering unconventional triplet superconductivity.
The valley-orbit coupling in a few-electron Si quantum dot is expected to be a function of its occupation number N. We study the spectrum of multivalley Si quantum dots for 2 <= N <= 4, showing that, counterintuitively, electron-electron interaction effects on the valley-orbit coupling are negligible. For N=2 they are suppressed by valley interference, for N=3 they vanish due to spinor overlaps, and for N = 4 they cancel between different pairs of electrons. To corroborate our theoretical findings, we examine the experimental energy spectrum of a few-electron metal-oxide-semiconductor quantum dot. The measured spin-valley state filling sequence in a magnetic field reveals that the valley-orbit coupling is definitively unaffected by the occupation number.