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Dynamic transition from Mott-like to metal-like state of the vortex lattice in a superconducting film with a periodic array of holes

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 Added by Pratap Raychaudhuri
 Publication date 2016
  fields Physics
and research's language is English




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We show that under an a.c. magnetic field excitation the vortex lattice in a superconductor with periodic array of holes can undergo a transition from a Mott-like state where each vortex is localized in a hole, to a metal-like state where the vortices get delocalized. The vortex dynamics is studied through the magnetic shielding response which is measured using a low frequency two-coil mutual inductance technique on a disordered superconducting NbN film having periodic array of holes. We observe that the shielding response of the vortex state is strongly dependent on the amplitude of the a.c. magnetic excitation. At low amplitude the shielding response varies smoothly with excitation amplitude, corresponding to elastic deformation of the vortex lattice. However, above a threshold value of excitation the response shows a series of sharp jumps, signaling the onset of the Mott to metal transition. Quantitative analysis reveals that this is a collective phenomenon which depends on the filling fraction of vortices in the antidot lattice.



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138 - S. Durr , T. Volz , N. Syassen 2006
We prepare a quantum state where each site of an optical lattice is occupied by exactly one molecule. This is the same quantum state as in a Mott insulator of molecules in the limit of negligible tunneling. Unlike previous Mott insulators, our system consists of molecules which can collide inelastically. In the absence of the optical lattice these collisions would lead to fast loss of the molecules from the sample. To prepare the state, we start from a Mott insulator of atomic 87Rb with a central region, where each lattice site is occupied by exactly two atoms. We then associate molecules using a Feshbach resonance. Remaining atoms can be removed using blast light. Our method does not rely on the molecule-molecule interaction properties and is therefore applicable to many systems.
The dynamic Mott insulator-to-metal transition (DMT) is key to many intriguing phenomena in condensed matter physics yet it remains nearly unexplored. The cleanest way to observe DMT, without the interference from disorder and other effects inherent to electronic and atomic systems, is to employ the vortex Mott states formed by superconducting vortices in a regular array of pinning sites. The applied electric current delocalizes vortices and drives the dynamic vortex Mott transition. Here we report the critical behavior of the vortex system as it crosses the DMT line, driven by either current or temperature. We find universal scaling with respect to both, expressed by the same scaling function and characterized by a single critical exponent coinciding with the exponent for the thermodynamic Mott transition. We develop a theory for the DMT based on the parity reflection-time reversal (PT) symmetry breaking formalism and find that the nonequilibrium-induced Mott transition has the same critical behavior as thermal Mott transition. Our findings demonstrate the existence of physical systems in which the effect of nonequilibrium drive is to generate effective temperature and hence the transition belonging in the thermal universality class. We establish PT symmetry-breaking as a universal mechanism for out-of-equilibrium phase transitions.
The use of artificial defects is known to enhance the superconducting critical parameters of thin films. In the case of conventional superconductors, regular arrays of submicron holes (antidots) substantially increase the critical temperature Tc(H) and critical current Ic(H) for all fields. Using electrical transport measurements, we study the effect of placing an additional small antidot in the unit cell of the array. This composite antidot lattice consists of two interpenetrating antidot square arrays with a different antidot size and the same lattice period. The smaller antidots are located exactly at the centers of the cells of the array of large antidots. We show that the composite antidot lattice can trap a higher number of flux quanta per unit cell inside the antidots, compared to a reference antidot film without the additional small antidots in the center of the cells. As a consequence, the field range in which an enhanced critical current is observed is considerably expanded. Finally, the possible stable vortex lattice patterns at several matching fields are determined by molecular dynamics simulations.
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