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Register a new userA semimetal nanowire rectifier: balancing quantum confinement and surface electronegativity
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Added by
Alfonso Sanchez-Soares
Publication date
2016
fields
Physics
and research's language is
English
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For semimetal nanowires with diameters smaller than a few tens of nanometers, a semimetal-to-semiconductor transition is observed as the emergence of an energy band gap resulting from quantum confinement. Quantum confinement in a semimetal results in either lifting of the degeneracy of the conduction and valence bands in a zero gap semimetal, or shifting of bands with a negative energy overlap to form conduction and valence bands. For semimetal nanowires with diameters below 10 nanometer, the magnitude of the band gap can become significantly larger than the thermal energy at room temperature resulting in a new class of semiconductors relevant for nanoelectronics with critical dimensions on the order of a few atomic lengths. The smaller a nanowires diameter, the larger its surface-to-volume ratio thus leading to an increasing impact of surface chemistry on its electronic structure. Energy level shifts to states in the vicinity of the Fermi level due to the electronegativity of surface terminating species are shown to be comparable in magnitude to quantum confinement effects at nanowire diameters of a few nanometer; these two effects can be used to counteract one another leading to semimetallic behavior for nanowire cross sections at which the quantum confinement effect would otherwise dominate. Abruptly changing the surface terminating species along the length of a nanowire leads to an abrupt change in the surface electronegativity. This can result in the formation of a semimetal-semiconductor junction within a monomaterial nanowire, without the need for impurity doping nor requiring the formation of a heterojunction.
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Electronegativity is shown to control charge transfer, energy level alignments, and electron currents in single molecule tunnel junctions, all of which are governed by correlations contained within the density matrix. This is demonstrated by the fact that currents calculated from the one-electron reduced density matrix to second order in electron correlation are identical to the currents obtained from the Greens function corrected to second order in electron self-energy.
A three-dimensional Dirac semimetal has bulk Dirac cones in all three momentum directions and Fermi arc-like surface states, and can be converted into a Weyl semimetal by breaking time-reversal symmetry. However, the highly conductive bulk state usually hides the electronic transport from the surface state in Dirac semimetal. Here, we demonstrate the supercurrent carried by bulk and surface states in Nb-Cd3As2 nanowire-Nb short and long junctions, respectively. For the 1 micrometer long junction, the Fabry-Perot interferences induced oscillations of the critical supercurrent are observed, suggesting the ballistic transport of the surface states carried supercurrent, where the bulk states are decoherent and the topologically protected surface states still keep coherent. Moreover, a superconducting dome is observed in the long junction, which is attributed to the enhanced dephasing from the interaction between surface and bulk states as tuning gate voltage to increase the carrier density. The superconductivity of topological semimetal nanowire is promising for braiding of Majorana fermions toward topological quantum computing.
The non-trivial topology of the three-dimensional (3D) topological insulator (TI) dictates the appearance of gapless Dirac surface states. Intriguingly, when a 3D TI is made into a nanowire, a gap opens at the Dirac point due to the quantum confinement, leading to a peculiar Dirac sub-band structure. This gap is useful for, e.g., future Majorana qubits based on TIs. Furthermore, these Dirac sub-bands can be manipulated by a magnetic flux and are an ideal platform for generating stable Majorana zero modes (MZMs), which play a key role in topological quantum computing. However, direct evidence for the Dirac sub-bands in TI nanowires has not been reported so far. Here we show that by growing very thin ($sim$40-nm diameter) nanowires of the bulk-insulating topological insulator (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ and by tuning its chemical potential across the Dirac point with gating, one can unambiguously identify the Dirac sub-band structure. Specifically, the resistance measured on gate-tunable four-terminal devices was found to present non-equidistant peaks as a function of the gate voltage, which we theoretically show to be the unique signature of the quantum-confined Dirac surface states. These TI nanowires open the way to address the topological mesoscopic physics, and eventually the Majorana physics when proximitised by an $s$-wave superconductor.
Anomalous surface states with Fermi arcs are commonly considered to be a fingerprint of Dirac semimetals (DSMs). In contrast to Weyl semimetals, however, Fermi arcs of DSMs are not topologically protected. Using first-principles calculations, we predict that $beta$-CuI is a peculiar DSM whose surface states form closed Fermi pockets instead of Fermi arcs. In such a fermiological Dirac semimetal, the deformation mechanism from Fermi arcs to Fermi pockets stems from a large cubic term preserving all crystal symmetries, and the small energy difference between the surface and bulk Dirac points. The cubic term in $beta$-CuI, usually negligible in prototypical DSMs, becomes relevant because of the particular crystal structure. As such, we establish a concrete material example manifesting the lack of topological protection for surface Fermi arcs in DSMs
We report reproducible fabrication of InP-InAsP nanowire light emitting diodes in which electron-hole recombination is restricted to a quantum-dot-sized InAsP section. The nanowire geometry naturally self-aligns the quantum dot with the n-InP and p-InP ends of the wire, making these devices promising candidates for electrically-driven quantum optics experiments. We have investigated the operation of these nano-LEDs with a consistent series of experiments at room temperature and at 10 K, demonstrating the potential of this system for single photon applications.
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