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Magnetoelectrical control of nonreciprocal microwave response in a multiferroic helimagnet

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 Added by Yusuke Iguchi
 Publication date 2016
  fields Physics
and research's language is English




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Control of physical property in terms of external fields is essential for contemporary technologies. The conductance can be controlled by a gate electric field in a field effect transistor, which is a main component of the integrated circuit. Optical phenomena induced by an electric field such as electroluminescence and electrochromism are useful for display and other technologies. Control of microwave propagation seems also imperative for future wireless communication technology. Microwave properties in solids are dominated mostly by magnetic excitations, which cannot be easily controlled by an electric field. One of the solutions for this problem is utilizing magnetically induced ferroelectrics (multiferroics). Here we show that microwave nonreciprocity, which is difference between oppositely propagating microwaves, can be reversed by the external electric field in a multiferroic helimagnet Ba$_2$Mg$_2$Fe$_{12}$O$_{22}$. This result offers a new avenue for the electrical control of microwave properties.

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In spite of both technical and fundamental importance, reversal of a macroscopic magnetization by an electric field (E) has been limitedly realized and remains as one of great challenges. Here, we report the realization of modulation and reversal of large magnetization (M) by E in a multiferroic crystal Ba0.5Sr1.5Zn2(Fe0.92Al0.08)12O22, in which a transverse conical spin state exhibits a remanent M and electric polarization below ~150 K. Upon sweeping E between +- 2 MV/m, M is quasi-linearly varied between +- 2 {mu}B/f.u., resulting in the M reversal. Moreover, the remanent M shows non-volatile changes of {Delta}M = +- 0.15 {mu}B/f.u., depending on the history of the applied electric fields. The large modulation and the non-volatile two-states of M at zero magnetic field are observable up to ~150 K where the transverse conical spin state is stabilized. Nuclear magnetic resonance measurements provide microscopic evidences that the electric field and the magnetic field play an equivalent role, rendering the volume of magnetic domains change accompanied by the domain wall motion. The present findings point to a new pathway for realizing the large magnetization reversal by electric fields at fairly high temperatures.
Using first-principles density functional calculations, electronic and optical properties of ferromagnetic semiconductor EuO are investigated. In particular, we have developed a way to obtain the spin-dependent optical response of the magnetic materials, which is helpful to verify the spin-dependent band structure of EuO. Significantly different optical responses from spin-up and spin-down channels are obtained in both linear and nonlinear cases, making it possible to distinguish contributions from different spin-channels in the optical absorption spectra if spin-flip process can be neglected. In addition, the red-shift of the absorption edge from paramagnetic to ferromagnetic ordering is explained by exchange interactions. Using such method, we have also compared the optical properties of multiferroic EuO which is induced by strong epitaxial strain. Our results show that from tensile to compressive strain, the blue-shift of the leading absorption peaks in the optical spectra, the red-shift of the optical band gap in spin-up state can be observed, consistent to the energy difference between spin-splitting orbits. The spin-dependent nonlinear optical properties reveal that in the infrared and visible light region, the contributions to second-harmonic generation (SHG) susceptibilities are mainly from spin-majority channels. In addition, the strain effect is also discussed. With the increase of epitaxial strain, the larger energy shift of the leading absorption peaks, and the more remarkable nonlinear optical response can be obtained.
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