Quantum valley Hall effect, orbital magnetism, and anomalous Hall effect in twisted multilayer graphene systems

We study the electronic structures and topological properties of $(M+N)$-layer twisted graphene systems. We consider the generic situation that $N$-layer graphene is placed on top of the other $M$-layer graphene, and is twisted with respect to each other by an angle $theta$. In such twisted multilayer graphene (TMG) systems, we find that there exists two low-energy flat bands for each valley emerging from the interface between the $M$ layers and the $N$ layers. These two low-energy bands in the TMG system possess valley Chern numbers that are dependent on both the number of layers and the stacking chiralities. In particular, when the stacking chiralities of the $M$ layers and $N$ layers are opposite, the total Chern number of the two low-energy bands for each valley equals to $pm(M+N-2)$ (per spin). If the stacking chiralities of the $M$ layers and the $N$ layers are the same, then the total Chern number of the two low-energy bands for each valley is $pm(M-N)$ (per spin). The valley Chern numbers of the low-energy bands are associated with large, valley-contrasting orbital magnetizations, suggesting the possible existence of orbital ferromagnetism and anomalous Hall effect once the valley degeneracy is lifted either externally by a weak magnetic field or internally by Coulomb interaction through spontaneous symmetry breaking.

Multicomponent fractional quantum Hall effect in graphene

We report observation of the fractional quantum Hall effect (FQHE) in high mobility multi-terminal graphene devices, fabricated on a single crystal boron nitride substrate. We observe an unexpected hierarchy in the emergent FQHE states that may be explained by strongly interacting composite Fermions with full SU(4) symmetric underlying degrees of freedom. The FQHE gaps are measured from temperature dependent transport to be up 10 times larger than in any other semiconductor system. The remarkable strength and unusual hierarcy of the FQHE described here provides a unique opportunity to probe correlated behavior in the presence of expanded quantum degrees of freedom.

Entanglement Skyrmions in multicomponent quantum Hall systems

We discuss charged topological spin textures in quantum Hall ferromagnets in which the electrons carry a pseudospin as well as the usual spin degree of freedom, as is the case in bilayer GaAs or monolayer graphene samples. We develop a theory which treats spin and pseudospin on a manifestly equal footing, which may also be of help in visualizing the relevant spin textures. We in particular consider the entanglement of spin and pseudospin in the presence of realistic anisotropies. An entanglement operator is introduced which generates families of degenerate Skyrmions with differing entanglement properties. We propose a local characterization of the latter, and touch on the role entangled Skyrmions play in the nuclear relaxation time of quantum Hall ferromagnets.

Interacting multi-channel topological boundary modes in a quantum Hall valley system

Symmetry and topology play key roles in the identification of phases of matter and their properties. Both concepts are central to understanding quantum Hall ferromagnets (QHFMs), two-dimensional electronic phases with spontaneously broken spin or pseudospin symmetry whose wavefunctions also have topological properties. Domain walls between distinct broken symmetry QHFM phases are predicted to host gapless one-dimensional (1D) modes that emerge due to a topological change of the underlying electronic wavefunctions at such interfaces. Although a variety of QHFMs have been identified in different materials, probing interacting electronic modes at these domain walls has not yet been accomplished. Here we use a scanning tunneling microscope (STM) to directly visualize the spontaneous formation of boundary modes, within a sign-changing topological gap, at domain walls between different valley-polarized quantum Hall phases on the surface of bismuth. By changing the valley occupation and the corresponding number of modes at the domain wall, we can realize different regimes where the valley-polarized channels are either metallic or develop a spectroscopic gap. This behavior is a consequence of Coulomb interactions constrained by the symmetry-breaking valley flavor, which determines whether electrons in the topological modes can backscatter, making these channels a unique class of interacting Luttinger liquids.

Observation of Quantum Hall Valley Skyrmions

We report measurements of the interaction-induced quantum Hall effect in a spin-polarized AlAs two-dimensional electron system where the electrons occupy two in-plane conduction band valleys. Via the application of in-plane strain, we tune the energies of these valleys and measure the energy gap of the quantum Hall state at filling factor $ u$ = 1. The gap has a finite value even at zero strain and, with strain, rises much faster than expected from a single-particle picture, suggesting that the lowest energy charged excitations at $ u=1$ are valley Skyrmions.