Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userSuperlattice-induced insulating states and valley-protected orbits in twisted bilayer graphene
60
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
Twisted bilayer graphene (TwBLG) is one of the simplest van der Waals heterostructures, yet it yields a complex electronic system with intricate interplay between moir{e} physics and interlayer hybridization effects. We report on electronic transport measurements of high mobility small angle TwBLG devices showing clear evidence for insulating states at the superlattice band edges, with thermal activation gaps several times larger than theoretically predicted. Moreover, Shubnikov-de Haas oscillations and tight binding calculations reveal that the band structure consists of two intersecting Fermi contours whose crossing points are effectively unhybridized. We attribute this to exponentially suppressed interlayer hopping amplitudes for momentum transfers larger than the moir{e} wavevector.
rate research
Read More
We report on high-field magnetotransport (B up to 35 T) on a gated superlattice based on single-layer graphene aligned on top of hexagonal boron nitride. The large-period moire modulation (15 nm) enables us to access the Hofstadter spectrum in the vicinity of and above one flux quantum per superlattice unit cell (Phi/Phi_0 = 1 at B = 22 T). We thereby reveal, in addition to the spin-valley antiferromagnet at nu = 0, two insulating states developing in positive and negative effective magnetic fields from the main nu = 1 and nu = -2 quantum Hall states respectively. We investigate the field dependence of the energy gaps associated with these insulating states, which we quantify from the temperature-activated peak resistance. Referring to a simple model of local Landau quantization of third generation Dirac fermions arising at Phi/Phi_0 = 1, we describe the different microscopic origins of the insulating states and experimentally determine the energy-momentum dispersion of the emergent gapped Dirac quasi-particles.
In minimally twisted bilayer graphene, a moir{e} pattern consisting of AB and BA stacking regions separated by domain walls forms. These domain walls are predicted to support counterpropogating topologically protected helical (TPH) edge states when the AB and BA regions are gapped. We fabricate designer moir{e} crystals with wavelengths longer than 50 nm and demonstrate the emergence of TPH states on the domain wall network by scanning tunneling spectroscopy measurements. We observe a double-line profile of the TPH states on the domain walls, only occurring when the AB and BA regions are gapped. Our results demonstrate a practical and flexible method for TPH state network construction.
We study transport in twisted bilayer graphene and show that electrostatic barriers can act as valley splitters, where electrons from the $K$ ($K$) valley are transmitted only to e.g. the top (bottom) layer, leading to valley-layer locked currents. We show that such a valley splitter is obtained when the barrier varies slowly on the moire scale and induces a Lifshitz transition across the junction, i.e. a change in the Fermi surface topology. Furthermore, we show that for a given valley the reflected and transmitted current are transversely deflected, as time-reversal symmetry is effectively broken in each valley separately, resulting in valley-selective transverse focusing at zero magnetic field.
The emergence of flat bands and correlated behaviors in magic angle twisted bilayer graphene (tBLG) has sparked tremendous interest, though many aspects of the system are under intense debate. Here we report observation of both superconductivity and the Mott-like insulating state in a tBLG device with a twist angle of approximately 0.93, which is smaller than the magic angle by 15%. At an electron concentration of +/-5 electrons per moire unit cell, we observe a narrow resistance peak with an activation energy gap of approximately 0.1 meV, indicating the existence of an additional correlated insulating state. This is consistent with theory predicting the presence of a high-energy band with an energetically flat dispersion. At a doping of +/-12 electrons per moire unit cell we observe a resistance peak due to the presence of Dirac points in the spectrum. Our results reveal that the magic range of tBLG is in fact larger than what is previously expected, and provide a wealth of new information to help decipher the strongly correlated phenomena observed in tBLG.
Twisting two layers into a magic angle (MA) of ~1.1{deg} is found essential to create low energy flat bands and the resulting correlated insulating, superconducting, and magnetic phases in twisted bilayer graphene (TBG). While most of previous works focus on revealing these emergent states in MA-TBG, a study of the twist angle dependence, which helps to map an evolution of these phases, is yet less explored. Here, we report a magneto-transport study on one non-magic angle TBG device, whose twist angle {theta} changes from 1.25{deg} at one end to 1.43{deg} at the other. For {theta}=1.25{deg}, we observe an emergence of topological insulating states at hole side with a sequence of Chern number |C|=4-|v|, where v is the number of electrons (holes) in moire unite cell. When {theta}>1.25{deg}, the Chern insulator from flat band disappears and evolves into fractal Hofstadter butterfly quantum Hall insulator where magnetic flux in one moire unite cell matters. Our observations will stimulate further theoretical and experimental investigations on the relationship between electron interactions and non-trivial band topology.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
