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Register a new userAll-strain based valley filter in graphene nanoribbons using snake states
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A pseudo-magnetic field kink can be realized along a graphene nanoribbon using strain engineering. Electron transport along this kink is governed by snake states that are characterized by a single propagation direction. Those pseudo-magnetic fields point towards opposite directions in the K and K valleys, leading to valley polarized snake states. In a graphene nanoribbon with armchair edges this effect results in a valley filter that is based only on strain engineering. We discuss how to maximize this valley filtering by adjusting the parameters that define the stress distribution along the graphene ribbon.
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We study the dynamics of the electrons in a non-uniform magnetic field applied perpendicular to a graphene sheet in the low energy limit when the excitation states can be described by a Dirac type Hamiltonian. We show that as compared to the two-dimensional electron gas (2DEG) snake states in graphene exibit peculiar properties related to the underlying dynamics of the Dirac fermions. The current carried by snake states is locally uncompensated even if the Fermi energy lies between the first non-zero energy Landau levels of the conduction and valence bands. The nature of these states is studied by calculating the current density distribution. It is shown that besides the snake states in finite samples surface states also exist.
We propose, for the first time, a valley Seebeck effect in gate tunable zigzag graphene nanoribbons as a result of the interplay between thermal gradient and valleytronics. A pure valley current is further generated by the thermal gradient as well as the external bias. In a broad temperature range, the pure valley current is found to be linearly dependent on the temperature gradient while it increases with the increasing temperature of one lead for a fixed thermal gradient. A valley field effect transistor (FET) driven by the temperature gradient is proposed that can turn on and off the pure valley current by gate voltage. The threshold gate voltage and on valley current are proportional to the temperature gradient. When the system switches on at positive gate voltage, the pure valley current is nearly independent of gate voltage. The valley transconductance is up to 30 {mu}S if we take Ampere as the unit of the valley current. This valley FET may find potential application in future valleytronics and valley caloritronics.
A Kekule bond texture in graphene modifies the electronic band structure by folding the Brillouin zone and bringing the two inequivalent Dirac points to the center. This can result, in the opening of a gap (Kek-O) or the locking of the valley degree of freedom with the direction of motion (Kek-Y). We analyze the effects of uniaxial strain on the band structure of Kekule-distorted graphene for both textures. Using a tight-binding approach, we introduce strain by considering the hopping renormalization and corresponding geometrical modifications of the Brillouin zone. We numerically evaluate the dispersion relation and present analytical expressions for the low-energy limit. Our results indicate the emergence of a Zeeman-like term due to the coupling of the pseudospin with the pseudomagnetic strain potential which separates the valleys by moving them in opposite directions away from the center of the Brillouin zone. For the Kek-O phase, this results in a competition between the Kekule parameter that opens a gap and the magnitude of strain which closes it. While for the Kek-Y phase, in a superposition of two shifted Dirac cones. As the Dirac cones are much closer in the supperlattice reciprocal space that in pristine graphene, we propose strain as a control parameter for intervalley scattering.
We investigate the effects of homogeneous and inhomogeneous deformations and edge disorder on the conductance of gated graphene nanoribbons. Under increasing homogeneous strain the conductance of such devices initially decreases before it acquires a resonance structure, and finally becomes completely suppressed at larger strain. Edge disorder induces mode mixing in the contact regions, which can restore the conductance to its ballistic value. The valley-antisymmetric pseudo-magnetic field induced by inhomogeneous deformations leads to the formation of additional resonance states, which either originate from the coupling into Fabry-Perot states that extend through the system, or from the formation of states that are localized near the contacts, where the pseudo-magnetic field is largest. In particular, the n=0 pseudo-Landau level manifests itself via two groups of conductance resonances close to the charge neutrality point.
We study the electronic states of narrow graphene ribbons (``nanoribbons) with zigzag and armchair edges. The finite width of these systems breaks the spectrum into an infinite set of bands, which we demonstrate can be quantitatively understood using the Dirac equation with appropriate boundary conditions. For the zigzag nanoribbon we demonstrate that the boundary condition allows a particle- and a hole-like band with evanescent wavefunctions confined to the surfaces, which continuously turn into the well-known zero energy surface states as the width gets large. For armchair edges, we show that the boundary condition leads to admixing of valley states, and the band structure is metallic when the width of the sample in lattice constant units is divisible by 3, and insulating otherwise. A comparison of the wavefunctions and energies from tight-binding calculations and solutions of the Dirac equations yields quantitative agreement for all but the narrowest ribbons.
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