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Register a new userSpin-Orbit Interaction and Kondo Scattering at the PrAlO$_3$/SrTiO$_3$ Interface: Effects of Oxygen Content
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We report the effect of oxygen pressure during growth ($P_{O_{2}}$) on the electronic and magnetic properties of PrAlO$_3$ films grown on $rm TiO_{2}$-terminated SrTiO$_3$ substrates. Resistivity measurements show an increase in the sheet resistance as $P_{O_{2}}$ is increased. The temperature dependence of the sheet resistance at low temperatures is consistent with Kondo theory for $P_{O_{2}} ge 10^{-5}$ torr. Hall effect data exhibit a complex temperature dependence that suggests a compensated carrier density. We observe behavior consistent with two different types of carriers at interfaces grown at $P_{O_{2}} ge 10^{-4}$ torr. For these interfaces, we measured a moderate positive magnetoresistance (MR) due to a strong spin-orbit (SO) interaction at low magnetic fields that evolves into a larger negative MR at high fields. Positive high MR values are associated with samples where a fraction of carriers are derived from oxygen vacancies. Analysis of the MR data permitted the extraction of the SO interaction critical field ( e.g. $ H_{SO}=$1.25 T for $P_{O_{2}}=10^{-5}$ torr). The weak anti-localization effect due to a strong SO interaction becomes smaller for higher $P_{O_{2}}$ grown samples, where MR values are dominated by the Kondo effect, particularly at high magnetic fields.
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Localization of electrons in the two-dimensional electron gas at the LaAlO$_3$/SrTiO$_3$ interface is investigated by varying the channel thickness in order to establish the nature of the conducting channel. Layers of SrTiO$_3$ were grown on NdGaO$_3$ (110) substrates and capped with LaAlO$_3$. When the SrTiO$_3$ thickness is $leq 6$ unit cells, most electrons at the interface are localized, but when the number of SrTiO$_3$ layers is 8-16, the free carrier density approaches $3.3 times 10^{14}$ cm$^{-2}$, the value corresponding to charge transfer of 0.5 electron per unit cell at the interface. The number of delocalized electrons decreases again when the SrTiO$_3$ thickness is $geq 20$ unit cells. The $sim{4}$ nm conducting channel is therefore located significantly below the interface. The results are explained in terms of Anderson localization and the position of the mobility edge with respect to the Fermi level.
The conducting gas that forms at the interface between LaAlO$_3$ and SrTiO$_3$ has proven to be a fertile playground for a wide variety of physical phenomena. The bulk of previous research has focused on the (001) and (110) crystal orientations. Here we report detailed measurements of the low-temperature electrical properties of (111) LAO/STO interface samples. We find that the low-temperature electrical transport properties are highly anisotropic, in that they differ significantly along two mutually orthogonal crystal orientations at the interface. While anisotropy in the resistivity has been reported in some (001) samples and in (110) samples, the anisotropy in the (111) samples reported here is much stronger, and also manifests itself in the Hall coefficient as well as the capacitance. In addition, the anisotropy is not present at room temperature and at liquid nitrogen temperatures, but only at liquid helium temperatures and below. The anisotropy is accentuated by exposure to ultraviolet light, which disproportionately affects transport along one surface crystal direction. Furthermore, analysis of the low-temperature Hall coefficient and the capacitance as a function of back gate voltage indicates that in addition to electrons, holes contribute to the electrical transport.
The 2-dimensional electron system at the interface between LaAlO$_{3}$ and SrTiO$_{3}$ has several unique properties that can be tuned by an externally applied gate voltage. In this work, we show that this gate-tunability extends to the effective band structure of the system. We combine a magnetotransport study on top-gated Hall bars with self-consistent Schrodinger-Poisson calculations and observe a Lifshitz transition at a density of $2.9times10^{13}$ cm$^{-2}$. Above the transition, the carrier density of one of the conducting bands decreases with increasing gate voltage. This surprising decrease is accurately reproduced in the calculations if electronic correlations are included. These results provide a clear, intuitive picture of the physics governing the electronic structure at complex oxide interfaces.
We investigated the electronic structure of the SrTiO$_3$/LaAlO$_3$ superlattice (SL) by resonant soft x-ray scattering. The (003) peak, which is forbidden for our ideal SL structure, was observed at all photon energies, indicating reconstruction at the interface. From the peak position analyses taking into account the effects of refraction, we obtained evidence for electronic reconstruction of Ti 3d and O $2p$ states at the interface. From reflectivity analyses, we concluded that the AlO$_2$/LaO/TiO$_2$/SrO and the TiO$_2$/SrO/AlO$_2$/LaO interfaces are quite different, leading to highly asymmetric properties.
Measurements of magneto-thermopower (S(H, T)) of interfacial delta doped LaTiO$_3$/SrTiO$_3$ (LTO/STO) heterostructure by an iso-structural antiferromagnetic perovskite LaCrO$_3$ are reported. The thermoelectric power of the pure LTO/STO interface at 300 K is $approx$ 118 $mu$V/K, but increases dramatically on $delta$-doping. The observed linear temperature dependence of S(T) over the temperature range 100 K to 300 K is in agreement with the theory of diffusion thermopower of a two-dimensional electron gas. The S(T) displays a distinct enhancement in the temperature range (T $<$ 100 K) where the sheet resistance shows a Kondo-type minimum. We attributed this maximum in S(T) to Kondo scattering of conduction electron by localized impurity spins at the interface. The suppression of S by a magnetic field, and the isotropic nature of the suppression in out-of-plane and in-plane field geometries further strengthen the Kondo model based interpretation of S(H, T).
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