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Register a new userGermanium under high tensile stress: nonlinear dependence of direct band gap vs. strain
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Germanium is a strong candidate as a laser source for silicon photonics. It is widely accepted that the band structure of germanium can be altered by tensile strain so as to reduce the energy difference between its direct and indirect band gaps. However, the conventional deformation potential model most widely adopted to describe this transformation happens to have been investigated only up to 1 % uniaxially loaded strains. In this work, we use a micro-bridge geometry to uniaxially stress germanium along [100] up to $varepsilon_{100}$=3.3 % longitudinal strain and then perform electro-absorption spectroscopy. We accurately measure the energy gap between the conduction band at the $Gamma$ point and the light- and heavy-hole valence bands. While the experimental results agree with the conventional linear deformation potential theory up to 2 % strain, a significantly nonlinear behavior is observed at higher strains. We measure the deformation potential of germanium to be a = -9.1 $pm$ 0.3 eV and b = -2.32 $pm$ 0.06 eV and introduce a second order deformation potential. The experimental results are found to be well described by tight-binding simulations. These new high strain coefficients will be suitable for the design of future CMOS-compatible lasers and opto-electronic devices based on highly strained germanium.
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We demonstrate the crossover from indirect- to direct band gap in tensile-strained germanium by temperature-dependent photoluminescence. The samples are strained microbridges that enhance a biaxial strain of 0.16% up to 3.6% uniaxial tensile strain. Cooling the bridges to 20 K increases the uniaxial strain up to a maximum of 5.4%. Temperature-dependent photoluminescence reveals the crossover to a fundamental direct band gap to occur between 4.0% and 4.5%. Our data are in good agreement with new theoretical computations that predict a strong bowing of the band parameters with strain.
Monolayer WTe2 attracts rapidly growing interests for its large-gap quantum spin Hall effect,which enables promising apllications in flexible logic devices. Due to one-dimensional W-W chains,1T-WTe2 exhibits unique anisotropic structure and promising properties, which can be modified by simply applying strains. Based on the first-principles simulations, we show that phonon branch undergoes soft down to negative frequency at special q points under different critical strains, i.e., epsilon_a = 11.55 percent along a-axis (with W-W chains) direction, epsilon_b = 7.0 percent along b-axis direction and epsilon_ab = 8.44 percent along biaxial direction. Before each critical strain, the Raman-shift of A1_g, A3_g, and A4_g modes, corresponding to the main peaks in Raman spectra of 1T-WTe2 , shows anisotropic response to uniaxial strain but most sensitive to biaxial strain. Interestingly, we find that the frequency shift of A3_g mode show parabolic characters of strained 1T-WTe2, then we split it into two parts and it shows a Raman-shift transition at about 5 percent strains. While for the A1_g and A4_g modes,the frequencies change linearly. Through careful structure and vibration analysis, we try to explain these Raman irregularity in strained 1T-WTe2.
The monolayer Gallium sulfide (GaS) was demonstrated as a promising two-dimensional semiconductor material with considerable band gaps. The present work investigates the band gap modulation of GaS monolayer under biaxial or uniaxial strain by using Density functional theory calculation. We found that GaS monolayer shows an indirect band gap that limits its optical applications. The results show that GaS monolayer has a sizable band gap. The uniaxial strain shifts band gap from indirect to direct in Gallium monochalcogenides (GaS). This behavior, allowing applications such as electroluminescent devices and laser. The detailed reasons for the band gap modulation are also discussed by analyzing the projected density of states (PDOS). It indicates that due to the role of p$_y$ orbital through uniaxial strain become more significant than others near the Fermi level. The indirect to direct band gap transition happen at $varepsilon$=-10y$%$. Moreover, by investigating the strain energy and transverse response of structures under uniaxial strain, we show that the GaS monolayer has the Poissons ratio of 0.23 and 0.24 in the zigzag (x) and armchair (y) directions, respectively. Thus, we conclude that the isotropic nature of mechanical properties under strain.
The circular polarization of direct gap emission of Ge is studied in optically-excited tensile-strained Ge-on-Si heterostructures as a function of doping and temperature. Owing to the spin-dependent optical selection rules, the radiative recombinations involving strain-split light (cG-LH) and heavy hole (cG-HH) bands are unambiguously resolved. The fundamental cG-LH transition is found to have a low temperature circular polarization degree of about 85% despite an off-resonance excitation of more than 300 meV. By photoluminescence (PL) measurements and tight binding calculations we show that this exceptionally high value is due to the peculiar energy dependence of the optically-induced electron spin population. Finally, our observation of the direct gap doublet clarifies that the light hole contribution, previously considered to be negligible, can dominate the room temperature PL even at low tensile strain values of about 0.2%.
The nucleation of cavities in a homogenous polymer under tensile strain is investigated in a coarse-grained molecular dynamics simulation. In order to establish a causal relation between local microstructure and the onset of cavitation, a detailed analysis of some local properties is presented. In contrast to common assumptions, the nucleation of a cavity is neither correlated to a local loss of density nor, to the stress at the atomic scale and nor to the chain ends density in the undeformed state. Instead, a cavity in glassy polymers nucleates in regions that display a low bulk elastic modulus. This criterion allows one to predict the cavity position before the cavitation occurs. Even if the localization of a cavity is not directly predictable from the initial configuration, the elastically weak zones identified in the initial state emerge as favorite spots for cavity formation.
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