No Arabic abstract
Dynamic properties of NiFe thin films on PMN-PT piezoelectric substrate are investigated using the spin-diode method. Ferromagnetic resonance (FMR) spectra of microstrips with varying width are measured as a function of magnetic field and frequency. The FMR frequency is shown to depend on the electric field applied across the substrate, which induces strain in the NiFe layer. Electric field tunability of up to 100 MHz per 1 kV/cm is achieved. An analytical model based on total energy minimization and the LLG equation, with magnetostriction effect taken into account, is developed to explain the measured dynamics. Based on this model, conditions for strong electric-field tunable spin diode FMR in patterned NiFe/PMN-PT structures are derived.
We present a comprehensive theoretical and experimental study of voltage-controlled standing spin waves resonance (SSWR) in PMN-PT/NiFe multiferroic heterostructures patterned into microstrips. A spin-diode technique was used to observe ferromagnetic resonance (FMR) mode and SSWR in NiFe strip mechanically coupled with a piezoelectric substrate. Application of an electric field to a PMNPT creates a strain in permalloy and thus shifts the FMR and SSWR fields due to the magnetostriction effect. The experimental results are compared with micromagnetic simulations and a good agreement between them is found for dynamics of FMR and SSWR with and without electric field. Moreover, micromagnetic simulations enable us to discuss the amplitude and phase spatial distributions of FMR and SSWR modes, which are not directly observable by means of spin diode detection technique.
We have investigated crystalline magnetic anisotropy in the electric field (EF) for the Fe-Pt surface which have a large perpendicular anisotropy, by means of the first-principles approach. The anisotropy is reduced linearly with respect to the inward EF, associated with the induced spin density around the Fe layer. Although the magnetic anisotropy energy (MAE) density reveals the large variation around the atoms, the intrinsic contribution to the MAE is found to mainly come from the Fe layer.
We report the nonlocal spin Seebeck effect (nlSSE) in a lateral configuration of Pt/Y$_3$Fe$_5$O$_{12}$(YIG)/Pt systems as a function of the magnetic field $B$ (up to 10 T) at various temperatures $T$ (3 K < $T$ < 300 K). The nlSSE voltage decreases with increasing $B$ in a linear regime with respect to the input power (the applied charge-current squared $I^2$). The reduction of the nlSSE becomes substantial when the Zeeman energy exceeds thermal energy at low temperatures, which can be interpreted as freeze-out of magnons relevant for the nlSSE. Furthermore, we found the non-linear power dependence of the nlSSE with increasing $I$ at low temperatures ($T$ < 20 K), at which the $B$-induced signal reduction becomes less visible. Our experimental results suggest that in the non-linear regime high-energy magnons are over populated than those expected from the thermal energy. We also estimate the magnon spin diffusion length as functions of $B$ and $T$.
We investigate the impact of mechanical strains and a perpendicular electric field on the electronic and magnetic ground-state properties of two-dimensional monolayer CrI$_3$ using density functional theory. We propose a minimal spin model Hamiltonian, consisting of symmetric isotropic exchange interactions, magnetic anisotropy energy, and Dzyaloshinskii-Moriya (DM) interactions, to capture most pertinent magnetic properties of the system. We compute the mechanical strain and electric field dependence of various spin-spin interactions. Our results show that both the amplitudes and signs of the exchange interactions can be engineered by means of strain, while the electric field affects only their amplitudes. However, strain and electric fields affect both the directions and amplitudes of the DM vectors. The amplitude of the magnetic anisotropy energy can also be substantially modified by an applied strain. We show that in comparison with an electric field, strain can be more efficiently used to manipulate the magnetic and electronic properties of the system. Notably, such systematic tuning of the spin interactions is essential for the engineering of room-temperature spintronic nanodevices.
We report on efficient spin injection in p-doped InGaAs/GaAs quantum-dot (QD) spin light emitting diode (spin-LED) under zero applied magnetic field. A high degree of electroluminescence circular polarization (Pc) ~19% is measured in remanence up to 100K. This result is obtained thanks to the combination of a perpendicularly magnetized CoFeB/MgO spin injector allowing efficient spin injection and an appropriate p-doped InGaAs/GaAs QD layer in the active region. By analyzing the bias and temperature dependence of the electroluminescence circular polarization, we have evidenced a two-step spin relaxation process. The first step occurs when electrons tunnel through the MgO barrier and travel across the GaAs depletion layer. The spin relaxation is dominated by the Dyakonov-Perel mechanism related to the kinetic energy of electrons, which is characterized by a bias dependent Pc. The second step occurs when electrons are captured into QDs prior to their radiative recombination with holes. The temperature dependence of Pc reflects the temperature induced modification of the QDs doping, together with the variation of the ratio between the charge carrier lifetime and the spin relaxation time inside the QDs. The understanding of these spin relaxation mechanisms is essential to improve the performance of spin LED for future spin optoelectronic applications at room temperature under zero applied magnetic field.